JPS5719857B2 - - Google Patents
Info
- Publication number
- JPS5719857B2 JPS5719857B2 JP9583979A JP9583979A JPS5719857B2 JP S5719857 B2 JPS5719857 B2 JP S5719857B2 JP 9583979 A JP9583979 A JP 9583979A JP 9583979 A JP9583979 A JP 9583979A JP S5719857 B2 JPS5719857 B2 JP S5719857B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583979A JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
EP80302557A EP0023810B1 (en) | 1979-07-27 | 1980-07-25 | Method of electron beam exposure |
DE8080302557T DE3066694D1 (en) | 1979-07-27 | 1980-07-25 | Method of electron beam exposure |
US06/387,678 US4443704A (en) | 1979-07-27 | 1982-06-11 | Method of electron beam exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583979A JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5621321A JPS5621321A (en) | 1981-02-27 |
JPS5719857B2 true JPS5719857B2 (ja) | 1982-04-24 |
Family
ID=14148539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9583979A Granted JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US4443704A (ja) |
EP (1) | EP0023810B1 (ja) |
JP (1) | JPS5621321A (ja) |
DE (1) | DE3066694D1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6164041A (ja) * | 1984-09-03 | 1986-04-02 | Matsushita Electronics Corp | マグネトロン構体装着装置 |
JPS62141202U (ja) * | 1986-02-28 | 1987-09-05 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3172847D1 (en) * | 1981-11-30 | 1985-12-12 | Ibm | Method and apparatus for improving the uniformness of patterns generated by electron beam lithography |
JPS5968928A (ja) * | 1982-10-13 | 1984-04-19 | Pioneer Electronic Corp | 半導体装置の製造方法 |
JPS59114818A (ja) * | 1982-12-21 | 1984-07-03 | Toshiba Corp | 電子ビ−ムパタ−ン描画方法 |
JPS59150422A (ja) * | 1983-01-31 | 1984-08-28 | Fujitsu Ltd | 露光処理方法 |
US4724222A (en) * | 1986-04-28 | 1988-02-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wafer chuck comprising a curved reference surface |
US5172331A (en) * | 1989-12-18 | 1992-12-15 | Fujitsu Limited | Apparatus and method for effecting exposure of sample to charged particle beam |
US5136169A (en) * | 1991-04-05 | 1992-08-04 | Massachusetts Institute Of Technology | Energy beam locating |
KR940009972B1 (ko) * | 1991-07-26 | 1994-10-19 | 삼성전자 주식회사 | 텔레비젼의 전원 제어회로 및 방법 |
JP3453009B2 (ja) * | 1995-07-20 | 2003-10-06 | 富士通株式会社 | 電子ビーム露光装置及びこの装置に於けるマーク位置検出方法 |
JP3544438B2 (ja) * | 1996-09-30 | 2004-07-21 | セイコーインスツルメンツ株式会社 | イオンビームによる加工装置 |
JPH11191529A (ja) * | 1997-12-25 | 1999-07-13 | Nikon Corp | 荷電ビーム露光方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3857041A (en) * | 1969-07-03 | 1974-12-24 | Texas Instruments Inc | Electron beam patterning system for use in production of semiconductor devices |
US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
FR2181467B1 (ja) * | 1972-04-25 | 1974-07-26 | Thomson Csf | |
FR39852E (fr) * | 1972-06-30 | 1932-03-24 | Ig Farbenindustrie Ag | Procédé de production de colorants solides pour cuve |
FR2220073B1 (ja) * | 1973-03-02 | 1983-04-15 | Thomson Csf | |
JPS5398781A (en) * | 1976-11-25 | 1978-08-29 | Jeol Ltd | Electron ray exposure unit |
JPS5472980A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Electron-beam drawing unit |
US4137459A (en) * | 1978-02-13 | 1979-01-30 | International Business Machines Corporation | Method and apparatus for applying focus correction in E-beam system |
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1979
- 1979-07-27 JP JP9583979A patent/JPS5621321A/ja active Granted
-
1980
- 1980-07-25 DE DE8080302557T patent/DE3066694D1/de not_active Expired
- 1980-07-25 EP EP80302557A patent/EP0023810B1/en not_active Expired
-
1982
- 1982-06-11 US US06/387,678 patent/US4443704A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6164041A (ja) * | 1984-09-03 | 1986-04-02 | Matsushita Electronics Corp | マグネトロン構体装着装置 |
JPS62141202U (ja) * | 1986-02-28 | 1987-09-05 |
Also Published As
Publication number | Publication date |
---|---|
US4443704A (en) | 1984-04-17 |
EP0023810B1 (en) | 1984-02-22 |
JPS5621321A (en) | 1981-02-27 |
EP0023810A1 (en) | 1981-02-11 |
DE3066694D1 (en) | 1984-03-29 |