JPS55128801A - Manufacture of large single crystal of ferrite with uniform composition - Google Patents

Manufacture of large single crystal of ferrite with uniform composition

Info

Publication number
JPS55128801A
JPS55128801A JP3671079A JP3671079A JPS55128801A JP S55128801 A JPS55128801 A JP S55128801A JP 3671079 A JP3671079 A JP 3671079A JP 3671079 A JP3671079 A JP 3671079A JP S55128801 A JPS55128801 A JP S55128801A
Authority
JP
Japan
Prior art keywords
crucible
ferrite
single crystal
composition
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3671079A
Other languages
English (en)
Inventor
Michihiro Torii
Masao Kihara
Hirohito Goto
Isamu Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FDK Corp
Original Assignee
FDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FDK Corp filed Critical FDK Corp
Priority to JP3671079A priority Critical patent/JPS55128801A/ja
Priority to FR8006833A priority patent/FR2452532B1/fr
Priority to NLAANVRAGE8001822,A priority patent/NL184071C/xx
Priority to DE19803012180 priority patent/DE3012180A1/de
Publication of JPS55128801A publication Critical patent/JPS55128801A/ja
Priority to US06/301,946 priority patent/US4382839A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/24Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/26Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
  • Magnetic Ceramics (AREA)
JP3671079A 1979-03-28 1979-03-28 Manufacture of large single crystal of ferrite with uniform composition Pending JPS55128801A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3671079A JPS55128801A (en) 1979-03-28 1979-03-28 Manufacture of large single crystal of ferrite with uniform composition
FR8006833A FR2452532B1 (fr) 1979-03-28 1980-03-27 Procede pour produire des monocristaux de ferrite
NLAANVRAGE8001822,A NL184071C (nl) 1979-03-28 1980-03-27 Werkwijze voor het bereiden van ferriet-eenkristallen.
DE19803012180 DE3012180A1 (de) 1979-03-28 1980-03-28 Verfahren zum erzeugen von ferrit- einkristallen
US06/301,946 US4382839A (en) 1979-03-28 1981-09-14 Process for producing ferrite single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3671079A JPS55128801A (en) 1979-03-28 1979-03-28 Manufacture of large single crystal of ferrite with uniform composition

Publications (1)

Publication Number Publication Date
JPS55128801A true JPS55128801A (en) 1980-10-06

Family

ID=12477316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3671079A Pending JPS55128801A (en) 1979-03-28 1979-03-28 Manufacture of large single crystal of ferrite with uniform composition

Country Status (5)

Country Link
US (1) US4382839A (ja)
JP (1) JPS55128801A (ja)
DE (1) DE3012180A1 (ja)
FR (1) FR2452532B1 (ja)
NL (1) NL184071C (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042293A (ja) * 1983-08-18 1985-03-06 Sony Corp 単結晶の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8005312A (nl) * 1980-09-24 1982-04-16 Philips Nv Werkwijze voor het vervaardigen van ferriet eenkristallen.
KR0157323B1 (ko) * 1991-12-31 1999-02-18 황선두 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
CN105671636B (zh) * 2014-11-18 2018-05-08 中国科学院上海硅酸盐研究所 一种大尺寸稀土正铁氧体单晶的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2361382A (en) * 1942-08-18 1944-10-31 Louis Rosen Method of casting
US2990258A (en) * 1958-11-12 1961-06-27 Augustine Frank Crystal growing apparatus
NL6506497A (ja) * 1964-05-23 1965-07-26
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
DE1244417B (de) * 1964-11-05 1967-07-13 Magnetfab Bonn Gmbh Metallischer Dauermagnetwerkstoff
US3494709A (en) * 1965-05-27 1970-02-10 United Aircraft Corp Single crystal metallic part

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042293A (ja) * 1983-08-18 1985-03-06 Sony Corp 単結晶の製造方法
JPH0366277B2 (ja) * 1983-08-18 1991-10-16 Sony Corp

Also Published As

Publication number Publication date
FR2452532A1 (fr) 1980-10-24
NL184071C (nl) 1989-04-03
US4382839A (en) 1983-05-10
FR2452532B1 (fr) 1985-09-20
NL184071B (nl) 1988-11-01
DE3012180A1 (de) 1980-10-09
NL8001822A (nl) 1980-09-30

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