FR2347974A1 - Procedes et dispositifs de formation d'un ruban de silicium monocristallin au moyen d'un germe d'orientation cristalline <110> (211) - Google Patents

Procedes et dispositifs de formation d'un ruban de silicium monocristallin au moyen d'un germe d'orientation cristalline <110> (211)

Info

Publication number
FR2347974A1
FR2347974A1 FR7710333A FR7710333A FR2347974A1 FR 2347974 A1 FR2347974 A1 FR 2347974A1 FR 7710333 A FR7710333 A FR 7710333A FR 7710333 A FR7710333 A FR 7710333A FR 2347974 A1 FR2347974 A1 FR 2347974A1
Authority
FR
France
Prior art keywords
seed crystal
specified
crucible
pulled
crystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7710333A
Other languages
English (en)
Other versions
FR2347974B1 (fr
Inventor
Theodore F Ciszek
Guenter H Schwuttke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/677,580 external-priority patent/US4075055A/en
Priority claimed from US05/677,579 external-priority patent/US4116641A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2347974A1 publication Critical patent/FR2347974A1/fr
Application granted granted Critical
Publication of FR2347974B1 publication Critical patent/FR2347974B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7710333A 1976-04-16 1977-03-30 Procedes et dispositifs de formation d'un ruban de silicium monocristallin au moyen d'un germe d'orientation cristalline <110> (211) Granted FR2347974A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/677,580 US4075055A (en) 1976-04-16 1976-04-16 Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
US05/677,579 US4116641A (en) 1976-04-16 1976-04-16 Apparatus for pulling crystal ribbons from a truncated wedge shaped die

Publications (2)

Publication Number Publication Date
FR2347974A1 true FR2347974A1 (fr) 1977-11-10
FR2347974B1 FR2347974B1 (fr) 1978-10-20

Family

ID=27101836

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7710333A Granted FR2347974A1 (fr) 1976-04-16 1977-03-30 Procedes et dispositifs de formation d'un ruban de silicium monocristallin au moyen d'un germe d'orientation cristalline <110> (211)

Country Status (2)

Country Link
DE (1) DE2700994C2 (fr)
FR (1) FR2347974A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2450883A1 (fr) * 1979-03-06 1980-10-03 Rca Corp Ensemble formant creuset pour croissance d'un cristal par efg avec deflecteurs du rayonnement thermique
FR2488916A1 (fr) * 1980-08-20 1982-02-26 Us Energy Procede et appareil de tirage d'un ruban monocristallin, en particulier semi-conducteur, d'un bain de matiere fondue
FR2497837A1 (fr) * 1981-01-12 1982-07-16 Mobil Tyco Solar Energy Corp Perfectionnements aux filieres pour la croissance de cristaux
FR2502650A1 (fr) * 1981-03-30 1982-10-01 Mobil Tyco Solar Energy Corp Appareil et procede pour faire croitre des corps cristallins en forme de ruban
FR2511708A1 (fr) * 1981-08-20 1983-02-25 Mobil Tyco Solar Energy Corp Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline
WO2011028787A1 (fr) * 2009-09-02 2011-03-10 Gt Crystal Systems, Llc Améliorations de procédé haute température utilisant de l'hélium sous pression régulée

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1286510B (de) * 1962-11-23 1969-01-09 Siemens Ag Verfahren zur Herstellung von bandfoermigen, aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
NL7001278A (fr) * 1969-03-12 1970-09-15

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS, VOLUME 49. NO. 7, 1ER AVRIL 1976, INTERNATIONAL NEWSLETTER "TOSHIBA SEEKS TO SLASH SOLAR-CELL COSTS BY 99%", PAGE 55 *
IBM TECHNICAL DISCLOSURE BULLETIN, VOLUME 17, NO. 8, JANVIER 1975 T.F.CISZEK "CONTINUOUS GROWTH OF SEMICONDUCTOR CRYSTAL RIBBONS WITHOUT A CRUCIBLE" PAGES 2338 A 2339) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2450883A1 (fr) * 1979-03-06 1980-10-03 Rca Corp Ensemble formant creuset pour croissance d'un cristal par efg avec deflecteurs du rayonnement thermique
FR2488916A1 (fr) * 1980-08-20 1982-02-26 Us Energy Procede et appareil de tirage d'un ruban monocristallin, en particulier semi-conducteur, d'un bain de matiere fondue
FR2497837A1 (fr) * 1981-01-12 1982-07-16 Mobil Tyco Solar Energy Corp Perfectionnements aux filieres pour la croissance de cristaux
FR2502650A1 (fr) * 1981-03-30 1982-10-01 Mobil Tyco Solar Energy Corp Appareil et procede pour faire croitre des corps cristallins en forme de ruban
FR2511708A1 (fr) * 1981-08-20 1983-02-25 Mobil Tyco Solar Energy Corp Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline
WO2011028787A1 (fr) * 2009-09-02 2011-03-10 Gt Crystal Systems, Llc Améliorations de procédé haute température utilisant de l'hélium sous pression régulée
US9546434B2 (en) 2009-09-02 2017-01-17 Gtat Corporation High-temperature process improvements using helium under regulated pressure

Also Published As

Publication number Publication date
DE2700994A1 (de) 1977-10-27
DE2700994C2 (de) 1986-02-06
FR2347974B1 (fr) 1978-10-20

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Legal Events

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