JPS5358490A - Forming method for film - Google Patents
Forming method for filmInfo
- Publication number
- JPS5358490A JPS5358490A JP13356676A JP13356676A JPS5358490A JP S5358490 A JPS5358490 A JP S5358490A JP 13356676 A JP13356676 A JP 13356676A JP 13356676 A JP13356676 A JP 13356676A JP S5358490 A JPS5358490 A JP S5358490A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming method
- thin film
- reaction tube
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356676A JPS5358490A (en) | 1976-11-05 | 1976-11-05 | Forming method for film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356676A JPS5358490A (en) | 1976-11-05 | 1976-11-05 | Forming method for film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5358490A true JPS5358490A (en) | 1978-05-26 |
Family
ID=15107789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13356676A Pending JPS5358490A (en) | 1976-11-05 | 1976-11-05 | Forming method for film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5358490A (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120130A (en) * | 1979-03-12 | 1980-09-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5621333A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Cleaning method of equipment for manufacturing semiconductor element |
JPS56110236A (en) * | 1980-02-04 | 1981-09-01 | Toshiba Corp | Cvd device |
JPS56152231A (en) * | 1980-04-25 | 1981-11-25 | Mitsubishi Electric Corp | Method and device for cleaning gas pipe |
JPS5767009A (en) * | 1980-10-02 | 1982-04-23 | Semiconductor Energy Lab Co Ltd | Formation of film |
JPS5821826A (ja) * | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | 半導体製造装置の堆積物除去方法 |
JPS5897826A (ja) * | 1981-12-07 | 1983-06-10 | Matsushita Electric Ind Co Ltd | 半導体製造装置およびその洗浄方法 |
JPS60140726A (ja) * | 1983-12-27 | 1985-07-25 | Fujitsu Ltd | プラズマ気相成長装置 |
JPS62126641A (ja) * | 1985-11-28 | 1987-06-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
JPS63190173A (ja) * | 1987-02-02 | 1988-08-05 | Tokyo Electron Ltd | プラズマ処理方法 |
JPS6487773A (en) * | 1987-06-26 | 1989-03-31 | Applied Materials Inc | Self-cleaning method of reactor chamber |
JPH0242724A (ja) * | 1988-04-28 | 1990-02-13 | Tel Sagami Ltd | 処理装置および処理装置のクリーニング方法 |
JPH02102564A (ja) * | 1988-10-12 | 1990-04-16 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
-
1976
- 1976-11-05 JP JP13356676A patent/JPS5358490A/ja active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120130A (en) * | 1979-03-12 | 1980-09-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5621333A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Cleaning method of equipment for manufacturing semiconductor element |
JPS56110236A (en) * | 1980-02-04 | 1981-09-01 | Toshiba Corp | Cvd device |
JPS56152231A (en) * | 1980-04-25 | 1981-11-25 | Mitsubishi Electric Corp | Method and device for cleaning gas pipe |
JPS5767009A (en) * | 1980-10-02 | 1982-04-23 | Semiconductor Energy Lab Co Ltd | Formation of film |
JPH0355401B2 (ja) * | 1980-10-02 | 1991-08-23 | ||
JPS5821826A (ja) * | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | 半導体製造装置の堆積物除去方法 |
JPS6359533B2 (ja) * | 1981-07-31 | 1988-11-21 | ||
JPS5897826A (ja) * | 1981-12-07 | 1983-06-10 | Matsushita Electric Ind Co Ltd | 半導体製造装置およびその洗浄方法 |
JPH0224372B2 (ja) * | 1983-12-27 | 1990-05-29 | Fujitsu Ltd | |
JPS60140726A (ja) * | 1983-12-27 | 1985-07-25 | Fujitsu Ltd | プラズマ気相成長装置 |
JPS62126641A (ja) * | 1985-11-28 | 1987-06-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
JPS63190173A (ja) * | 1987-02-02 | 1988-08-05 | Tokyo Electron Ltd | プラズマ処理方法 |
JPS6487773A (en) * | 1987-06-26 | 1989-03-31 | Applied Materials Inc | Self-cleaning method of reactor chamber |
JPH0242724A (ja) * | 1988-04-28 | 1990-02-13 | Tel Sagami Ltd | 処理装置および処理装置のクリーニング方法 |
JPH02102564A (ja) * | 1988-10-12 | 1990-04-16 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
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