JPS5621333A - Cleaning method of equipment for manufacturing semiconductor element - Google Patents
Cleaning method of equipment for manufacturing semiconductor elementInfo
- Publication number
- JPS5621333A JPS5621333A JP9764779A JP9764779A JPS5621333A JP S5621333 A JPS5621333 A JP S5621333A JP 9764779 A JP9764779 A JP 9764779A JP 9764779 A JP9764779 A JP 9764779A JP S5621333 A JPS5621333 A JP S5621333A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- quartz tube
- plasma
- generation
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010453 quartz Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000126 substance Substances 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To keep the inside surface of a container clean without using harmful chemicals and gas, by causing oxidizing gas plasma, which is produced by high- frequency discharge, to flow through the container in wich the semicondcutor substrate is treated with heat. CONSTITUTION:A plasma generation tube 4 is coupled to a quartz tube 1 through a stop cock 3. O2 and steam are introduced into the generation tube 4 through its gas inlet port. Microwaves are transmitted to the tube 4 from a waveguide 6 attached to one end of the tube 4 to produce plasma to oxidize organic substances 2 adhering to the inside surface of the quartz tube 1. CO2, H2O, etc. produced by the oxidization are removed out of the quartz tube to clean up the inside of the tube. Removing the generation tube 4, the quartz tube 1 can be immediately used again. Therefore, rinsing, drying, etc. as in the use of a chemical liquid such as a mixed liquid of HF and chromic acid are not needed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9764779A JPS5621333A (en) | 1979-07-31 | 1979-07-31 | Cleaning method of equipment for manufacturing semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9764779A JPS5621333A (en) | 1979-07-31 | 1979-07-31 | Cleaning method of equipment for manufacturing semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5621333A true JPS5621333A (en) | 1981-02-27 |
Family
ID=14197891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9764779A Pending JPS5621333A (en) | 1979-07-31 | 1979-07-31 | Cleaning method of equipment for manufacturing semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5621333A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176113A (en) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | Semiconductor processing device |
JPS61291490A (en) * | 1985-06-19 | 1986-12-22 | Hitachi Ltd | Method of removing unnecessary arsenic attached to container or to internal material of same |
JPS6364327A (en) * | 1986-09-04 | 1988-03-22 | Chlorine Eng Corp Ltd | Method of washing apparatus for removing organic film |
JPS6448421A (en) * | 1987-08-19 | 1989-02-22 | Fujitsu Ltd | Ashing method |
JPH02268433A (en) * | 1989-04-10 | 1990-11-02 | Nec Corp | Manufacture of semiconductor device |
JPH053162A (en) * | 1991-10-22 | 1993-01-08 | Nec Corp | Vapor epitaxial growth device |
DE4414263A1 (en) * | 1994-04-23 | 1995-10-26 | Fraunhofer Ges Forschung | Plasma-induced chemical cleaning of substrates |
GB2339001A (en) * | 1998-05-29 | 2000-01-12 | Nec Corp | Method for cleaning inner surface of a semiconductor fabricating machine |
US6533952B2 (en) * | 1999-06-08 | 2003-03-18 | Euv Llc | Mitigation of radiation induced surface contamination |
WO2017055002A1 (en) * | 2015-09-30 | 2017-04-06 | Siemens Aktiengesellschaft | Active wet-steam cleaning method for steam turbines |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
-
1979
- 1979-07-31 JP JP9764779A patent/JPS5621333A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176113A (en) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | Semiconductor processing device |
JPS61291490A (en) * | 1985-06-19 | 1986-12-22 | Hitachi Ltd | Method of removing unnecessary arsenic attached to container or to internal material of same |
JPS6364327A (en) * | 1986-09-04 | 1988-03-22 | Chlorine Eng Corp Ltd | Method of washing apparatus for removing organic film |
JPS6448421A (en) * | 1987-08-19 | 1989-02-22 | Fujitsu Ltd | Ashing method |
JPH02268433A (en) * | 1989-04-10 | 1990-11-02 | Nec Corp | Manufacture of semiconductor device |
JPH053162A (en) * | 1991-10-22 | 1993-01-08 | Nec Corp | Vapor epitaxial growth device |
DE4414263A1 (en) * | 1994-04-23 | 1995-10-26 | Fraunhofer Ges Forschung | Plasma-induced chemical cleaning of substrates |
DE4414263C2 (en) * | 1994-04-23 | 2000-07-06 | Fraunhofer Ges Forschung | Process and evaporator for plasma chemical cleaning of substrates |
GB2339001A (en) * | 1998-05-29 | 2000-01-12 | Nec Corp | Method for cleaning inner surface of a semiconductor fabricating machine |
US6214130B1 (en) | 1998-05-29 | 2001-04-10 | Nec Corporation | Method for cleaning the inside of a pipe in semiconductor device fabricating machine |
US6533952B2 (en) * | 1999-06-08 | 2003-03-18 | Euv Llc | Mitigation of radiation induced surface contamination |
WO2017055002A1 (en) * | 2015-09-30 | 2017-04-06 | Siemens Aktiengesellschaft | Active wet-steam cleaning method for steam turbines |
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