JPS5621333A - Cleaning method of equipment for manufacturing semiconductor element - Google Patents

Cleaning method of equipment for manufacturing semiconductor element

Info

Publication number
JPS5621333A
JPS5621333A JP9764779A JP9764779A JPS5621333A JP S5621333 A JPS5621333 A JP S5621333A JP 9764779 A JP9764779 A JP 9764779A JP 9764779 A JP9764779 A JP 9764779A JP S5621333 A JPS5621333 A JP S5621333A
Authority
JP
Japan
Prior art keywords
tube
quartz tube
plasma
generation
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9764779A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9764779A priority Critical patent/JPS5621333A/en
Publication of JPS5621333A publication Critical patent/JPS5621333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To keep the inside surface of a container clean without using harmful chemicals and gas, by causing oxidizing gas plasma, which is produced by high- frequency discharge, to flow through the container in wich the semicondcutor substrate is treated with heat. CONSTITUTION:A plasma generation tube 4 is coupled to a quartz tube 1 through a stop cock 3. O2 and steam are introduced into the generation tube 4 through its gas inlet port. Microwaves are transmitted to the tube 4 from a waveguide 6 attached to one end of the tube 4 to produce plasma to oxidize organic substances 2 adhering to the inside surface of the quartz tube 1. CO2, H2O, etc. produced by the oxidization are removed out of the quartz tube to clean up the inside of the tube. Removing the generation tube 4, the quartz tube 1 can be immediately used again. Therefore, rinsing, drying, etc. as in the use of a chemical liquid such as a mixed liquid of HF and chromic acid are not needed.
JP9764779A 1979-07-31 1979-07-31 Cleaning method of equipment for manufacturing semiconductor element Pending JPS5621333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9764779A JPS5621333A (en) 1979-07-31 1979-07-31 Cleaning method of equipment for manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9764779A JPS5621333A (en) 1979-07-31 1979-07-31 Cleaning method of equipment for manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5621333A true JPS5621333A (en) 1981-02-27

Family

ID=14197891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9764779A Pending JPS5621333A (en) 1979-07-31 1979-07-31 Cleaning method of equipment for manufacturing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5621333A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176113A (en) * 1985-01-31 1986-08-07 Toshiba Corp Semiconductor processing device
JPS61291490A (en) * 1985-06-19 1986-12-22 Hitachi Ltd Method of removing unnecessary arsenic attached to container or to internal material of same
JPS6364327A (en) * 1986-09-04 1988-03-22 Chlorine Eng Corp Ltd Method of washing apparatus for removing organic film
JPS6448421A (en) * 1987-08-19 1989-02-22 Fujitsu Ltd Ashing method
JPH02268433A (en) * 1989-04-10 1990-11-02 Nec Corp Manufacture of semiconductor device
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
DE4414263A1 (en) * 1994-04-23 1995-10-26 Fraunhofer Ges Forschung Plasma-induced chemical cleaning of substrates
GB2339001A (en) * 1998-05-29 2000-01-12 Nec Corp Method for cleaning inner surface of a semiconductor fabricating machine
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
WO2017055002A1 (en) * 2015-09-30 2017-04-06 Siemens Aktiengesellschaft Active wet-steam cleaning method for steam turbines

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176113A (en) * 1985-01-31 1986-08-07 Toshiba Corp Semiconductor processing device
JPS61291490A (en) * 1985-06-19 1986-12-22 Hitachi Ltd Method of removing unnecessary arsenic attached to container or to internal material of same
JPS6364327A (en) * 1986-09-04 1988-03-22 Chlorine Eng Corp Ltd Method of washing apparatus for removing organic film
JPS6448421A (en) * 1987-08-19 1989-02-22 Fujitsu Ltd Ashing method
JPH02268433A (en) * 1989-04-10 1990-11-02 Nec Corp Manufacture of semiconductor device
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
DE4414263A1 (en) * 1994-04-23 1995-10-26 Fraunhofer Ges Forschung Plasma-induced chemical cleaning of substrates
DE4414263C2 (en) * 1994-04-23 2000-07-06 Fraunhofer Ges Forschung Process and evaporator for plasma chemical cleaning of substrates
GB2339001A (en) * 1998-05-29 2000-01-12 Nec Corp Method for cleaning inner surface of a semiconductor fabricating machine
US6214130B1 (en) 1998-05-29 2001-04-10 Nec Corporation Method for cleaning the inside of a pipe in semiconductor device fabricating machine
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
WO2017055002A1 (en) * 2015-09-30 2017-04-06 Siemens Aktiengesellschaft Active wet-steam cleaning method for steam turbines

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