JPS61176113A - Semiconductor processing device - Google Patents
Semiconductor processing deviceInfo
- Publication number
- JPS61176113A JPS61176113A JP1529085A JP1529085A JPS61176113A JP S61176113 A JPS61176113 A JP S61176113A JP 1529085 A JP1529085 A JP 1529085A JP 1529085 A JP1529085 A JP 1529085A JP S61176113 A JPS61176113 A JP S61176113A
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- tube
- cleaning
- teflon
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体装置の製造書＝用いる拡散炉に係わる
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a diffusion furnace used in a manufacturing document for a semiconductor device.
従来、半導体装置の製造Ｃ二剤いられる拡散炉の洗浄は
、炉心管に用いている石英管を炉から取りはずし、専用
の洗浄槽内で弗酸系の薬品を用いて石英管内壁をエツチ
ングする方法で行なわれてきた。しかし、この従来方法
では石英管の取りはずし、および洗浄後の石英管の取り
付けに多くの時間と人的労力を要し、更に複数の石英管
の洗浄の際は専用の洗浄槽Ｃ：入る石英管の本数（二制
限があるため、洗浄回数が増えでしまう。この上う暑；
、従来の洗浄方法は多くの時間と人的労力を必要とする
ため、撤産の効率を低下させるという欠点を有していた
。Conventionally, cleaning of a diffusion furnace that requires two chemicals for manufacturing semiconductor devices involves removing the quartz tube used for the furnace core tube from the furnace, and etching the inner wall of the quartz tube using a hydrofluoric acid-based chemical in a dedicated cleaning tank. It has been done by method. However, with this conventional method, it takes a lot of time and human labor to remove the quartz tube and install the quartz tube after cleaning, and when cleaning multiple quartz tubes, a dedicated cleaning tank C: Because there is a limit on the number of bottles (2), the number of times you have to wash them will increase.
However, the conventional cleaning method requires a lot of time and human labor, which has the disadvantage of reducing the efficiency of disposal.
本発明は上述した従来装置の欠点を改良したもので、拡
散炉内部の石英管を炉本体から取りはずすことなく洗浄
し、洗浄時間を短縮することのできる拡散炉を提供する
ものである。The present invention improves the drawbacks of the conventional apparatus described above, and provides a diffusion furnace in which the quartz tube inside the diffusion furnace can be cleaned without removing it from the furnace body, thereby shortening the cleaning time.
本発明は拡散炉内部の石英管礪；、洗浄用の薬品の注入
口および排出口を備え、石英管を炉内（：設置したまま
洗浄できる装置を拡散炉（；設置することを特徴とする
。The present invention is characterized in that a quartz tube inside a diffusion furnace is equipped with an inlet and an outlet for cleaning chemicals, and a device is installed in the diffusion furnace that can clean the quartz tube while it is inside the furnace. .
本発明Ｃ二よれば、拡散炉内部の石英管を炉本体から取
りはずして洗浄する必要がなくなり、石英管の取りはず
しおよび洗浄後の石英管の取り付けに要する時間と人的
労力を省くことができ、更（二複数の石英管を同時に洗
浄できるため、仕事の能率を著しく向上させ半導体装置
の量産性増大に貢献することができる。また、洗浄が密
閉された石英管内で行なわれるため、薬品による災害の
発生を抑え易く、優れた安全性を得ることができる。According to the present invention C2, there is no need to remove the quartz tube inside the diffusion furnace from the furnace body and clean it, and the time and human labor required for removing the quartz tube and installing the quartz tube after cleaning can be saved. (2) Since multiple quartz tubes can be cleaned at the same time, work efficiency can be significantly improved and it can contribute to increased mass production of semiconductor devices. Also, since cleaning is carried out inside a sealed quartz tube, there is no risk of accidents caused by chemicals. It is easy to suppress the occurrence of , and it is possible to obtain excellent safety.
第１図は本発明の一実施例を示す。第１図（ａ）（二示
す如く、拡散炉装置ｌの内部に石英管２が設置してあり
、石英管２の底部および上部に洗浄用の薬品の注入口３
および排出口４および空気の出入口５を備えておく。前
記の３つの出入口（：は、そレソレテフロン製チューブ
６．７および８を取り付け、拡散炉装置１の外部に延長
する。前記の３つのチューブＣ：は、それぞれ開閉弁９
，１０および１１を備えておく。テフロンチューブ６は
薬品槽（二、テフロンチューブ７は排液槽に、そしてテ
フロンチューブ８は排気口（：それぞれ接続されている
。FIG. 1 shows an embodiment of the invention. As shown in FIG. 1(a)(2), a quartz tube 2 is installed inside the diffusion furnace device 1, and cleaning chemical injection ports 3 are provided at the bottom and top of the quartz tube 2.
Also, an exhaust port 4 and an air inlet/outlet 5 are provided. The three entrances and exit ports (:) are connected to Teflon tubes 6, 7 and 8, and are extended to the outside of the diffusion furnace apparatus 1.
, 10 and 11 are provided. The Teflon tube 6 is connected to the chemical tank (2), the Teflon tube 7 is connected to the drainage tank, and the Teflon tube 8 is connected to the exhaust port (2).
反応ガスの注入口１２と炉口１３はそれぞれテフロン製
キャップ１４と１５で密閉しておく。洗浄用の薬品の注
入は、第１図（ｂ）に示す如く開閉弁９と１１を開き、
１０を閉じた状態で薬品槽からテフロンチューブ６を通
しで石英管２の内部に例えば弗硝酸１６を注入する。次
曵；第１図（Ｃ）；ユ示す如く、石英管２の内部が弗硝
酸１６で満たされた時点で開閉弁９と１１を閉じ、３０
分から６０分程度放置して石英管２の内側のエツチング
洗浄を行なう。次に第１図（ｄ）に示す如く、開閉弁１
１と１０を開き、石英管２の内部の弗硝酸１６をテフロ
ンチューブ７全通しで廃液槽（：排出する。弗硝酸によ
るエツチング洗浄後の超純水による洗浄は、テフロンチ
ューブ６を超純水槽につなぎ変えた後、第１図（ｂ）〜
（ｄ）に示した手順と全く同じ手順で行なえばよい。超
純水を石英管２から排水する際（；、第１図（ｄ））二
示すよう（：排水用のテフロンチューブ７（二ｐＨメー
タ１７を設置しておいで排水のｐＨをモニターすれば、
ｐＨ＝＝７１ニーなるまで洗浄をくり返せばよいとと（
二なる。The reaction gas injection port 12 and the furnace port 13 are sealed with Teflon caps 14 and 15, respectively. To inject the cleaning chemicals, open the on-off valves 9 and 11 as shown in Figure 1(b).
With the tube 10 closed, for example, fluoronitric acid 16 is injected into the quartz tube 2 from the chemical tank through the Teflon tube 6. As shown in Figure 1 (C), when the inside of the quartz tube 2 is filled with fluoronitric acid 16, the on-off valves 9 and 11 are closed, and the valves 9 and 11 are closed.
The inside of the quartz tube 2 is etched and cleaned by leaving it for about 60 minutes. Next, as shown in FIG. 1(d), the on-off valve 1
1 and 10, and drain the fluoronitric acid 16 inside the quartz tube 2 by passing the Teflon tube 7 all the way through the waste liquid tank (:).For cleaning with ultrapure water after etching cleaning with fluoronitric acid, transfer the Teflon tube 6 to the ultrapure water tank. After changing the connection to Figure 1 (b) ~
It is sufficient to follow exactly the same procedure as shown in (d). When draining ultrapure water from the quartz tube 2 (Fig. 1(d)), as shown in Fig. 1(d), install a Teflon tube 7 for drainage (2) and monitor the pH of the waste water.
I thought it would be a good idea to repeat the washing until the pH was 71 (
Two.
第２図は、石英管の洗浄（二部酸系のガスを用いた場合
の実施例を示す。第２図に示す如く、石英管２の後部の
ガス注入口１２にテフロンチューブ１８を取り付け、拡
散炉装置外部に延長し、弗酸ガスボンベに接続する。開
閉弁９とｌＯは閉じ、１１は開けたまま弗酸ガス１９を
テフロンチューブ１８を通して石英管２の内部へ導入し
て内壁をエツチング洗浄する。その後の純水洗浄は、第
１図で示した手順と同様書ニしで行なえばよい。FIG. 2 shows an example of cleaning a quartz tube (using a bipartite gas). As shown in FIG. 2, a Teflon tube 18 is attached to the gas inlet 12 at the rear of the quartz tube 2. It is extended to the outside of the diffusion furnace apparatus and connected to a hydrofluoric acid gas cylinder.The on-off valves 9 and 1O are closed, and with valve 11 open, hydrofluoric acid gas 19 is introduced into the inside of the quartz tube 2 through the Teflon tube 18 to etch and clean the inner wall. The subsequent washing with pure water may be carried out in the same manner as the procedure shown in FIG.
この様に、本発明は半導体基板（：熱処理を行なったり
、表面（二材料膜を形成する装置？＝用いることができ
る。In this way, the present invention can be used for a semiconductor substrate (: thermal treatment) or a surface (equipment for forming a two-material film).
８ｇ１図は本発明の実施例を示した断面図、第２図は本
発明の他の実施例を示した断面図である。
代理人 弁理士 則 近 憲 佑 （ほか１名）第１図
（り）
第１図
（Ｃ）
（ｃＬ＞
第２図
↑8g1 is a cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the present invention. Agent Patent attorney Kensuke Chika (and 1 other person) Figure 1 (ri) Figure 1 (C) (cL> Figure 2 ↑
Claims (1)
処理装置において、石英管の側壁の一箇所以上に、石英
管内部と外部を結ぶ石英管内部洗浄用の中空管を備え、
前記石英管が炉本体に収納された状態で洗浄が行なわれ
る如く為した事を特徴とする半導体処理装置。In a semiconductor processing apparatus having a furnace equipped with a quartz tube for processing semiconductor substrates, a hollow tube for cleaning the inside of the quartz tube connecting the inside and outside of the quartz tube is provided at one or more places on the side wall of the quartz tube,
A semiconductor processing apparatus characterized in that cleaning is performed while the quartz tube is housed in a furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1529085A JPS61176113A (en) | 1985-01-31 | 1985-01-31 | Semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1529085A JPS61176113A (en) | 1985-01-31 | 1985-01-31 | Semiconductor processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61176113A true JPS61176113A (en) | 1986-08-07 |
Family
ID=11884708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1529085A Pending JPS61176113A (en) | 1985-01-31 | 1985-01-31 | Semiconductor processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61176113A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989540A (en) * | 1988-08-17 | 1991-02-05 | Tel Sagami Limited | Apparatus for reaction treatment |
| JPH0758034A (en) * | 1993-08-11 | 1995-03-03 | Tokyo Electron Ltd | Gas processing apparatus and cleaning method therof |
| US6536455B1 (en) * | 1999-09-16 | 2003-03-25 | Nec Corporation | Diffusion reactor with sloped bottom plate suitable for cleaning the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138237A (en) * | 1979-04-13 | 1980-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5621333A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Cleaning method of equipment for manufacturing semiconductor element |
| JPS5970763A (en) * | 1982-10-12 | 1984-04-21 | Matsushita Electric Ind Co Ltd | Thin film forming device |
| JPS6016309A (en) * | 1983-07-07 | 1985-01-28 | Toyota Motor Corp | Cutting method using rotary cutting tool |
-
1985
- 1985-01-31 JP JP1529085A patent/JPS61176113A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138237A (en) * | 1979-04-13 | 1980-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5621333A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Cleaning method of equipment for manufacturing semiconductor element |
| JPS5970763A (en) * | 1982-10-12 | 1984-04-21 | Matsushita Electric Ind Co Ltd | Thin film forming device |
| JPS6016309A (en) * | 1983-07-07 | 1985-01-28 | Toyota Motor Corp | Cutting method using rotary cutting tool |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989540A (en) * | 1988-08-17 | 1991-02-05 | Tel Sagami Limited | Apparatus for reaction treatment |
| JPH0758034A (en) * | 1993-08-11 | 1995-03-03 | Tokyo Electron Ltd | Gas processing apparatus and cleaning method therof |
| US6536455B1 (en) * | 1999-09-16 | 2003-03-25 | Nec Corporation | Diffusion reactor with sloped bottom plate suitable for cleaning the same |
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