JPH0238439Y2 - - Google Patents
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- Publication number
- JPH0238439Y2 JPH0238439Y2 JP1985067415U JP6741585U JPH0238439Y2 JP H0238439 Y2 JPH0238439 Y2 JP H0238439Y2 JP 1985067415 U JP1985067415 U JP 1985067415U JP 6741585 U JP6741585 U JP 6741585U JP H0238439 Y2 JPH0238439 Y2 JP H0238439Y2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- processing
- liquid
- treatment
- processing tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012545 processing Methods 0.000 claims description 84
- 239000007788 liquid Substances 0.000 claims description 60
- 238000011282 treatment Methods 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 27
- 238000004381 surface treatment Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 15
- 238000001035 drying Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Description
【考案の詳細な説明】
〔技術分野〕
本考案は、ウエハ等の半導体基板や、マスク用
ガラス基板等を、例えば、現像液、エツチング
液、洗浄液等所要の表面処理液の中に浸漬して、
基板の表面処理を行う表面処理装置に関しとく
に、処理槽の洗浄乾燥を容易とした表面処理装置
に関する。[Detailed Description of the Invention] [Technical Field] The present invention involves immersing a semiconductor substrate such as a wafer, a glass substrate for a mask, etc. in a required surface treatment liquid such as a developing solution, an etching solution, or a cleaning solution. ,
The present invention relates to a surface treatment apparatus that performs surface treatment on a substrate, and particularly relates to a surface treatment apparatus that facilitates cleaning and drying of a treatment tank.
例えば、ウエハ等の半導体基板を処理するに
は、まず、薄く研磨されたウエハを900℃〜1100
℃の拡散炉の中に入れ、かつこの炉の中に酸素を
送り込み、ウエハ表面に酸化膜を形成させる。次
に、この酸化膜を洗浄した後、フオトレジストを
塗布し、パターンが描かれているフオトマスク
を、フオトレジスト層に密着させ露光する。
For example, to process a semiconductor substrate such as a wafer, first the thinly polished wafer is heated to 900℃ to 1100℃.
The wafer is placed in a diffusion furnace at 0.degree. C., and oxygen is fed into the furnace to form an oxide film on the wafer surface. Next, after cleaning this oxide film, a photoresist is applied, and a photomask with a pattern drawn thereon is brought into close contact with the photoresist layer and exposed.
次いで、露光ずみのウエハを現像することによ
り、未露光部のフオトレジスト膜を除去する。次
いで、酸化膜露出部をエツチングにより取り除
き、さらに必要な要素を作るために、拡散処理が
行われる。 Next, the exposed wafer is developed to remove the unexposed portions of the photoresist film. The exposed portions of the oxide film are then etched away and a diffusion process is performed to create further required elements.
このように、フオトエツチングと拡散処理を何
度も繰り返して、ウエハに必要な回路素子を構成
していく。 In this way, the photo-etching and diffusion processes are repeated many times to construct the necessary circuit elements on the wafer.
上記のウエハ処理工程においては、ウエハの表
面にフオトレジストのマスクを形成し、エツチン
グ液に浸漬し、エツチング処理や、エツチング等
を施した後のウエハ表面を、水等で洗い流す洗浄
処理等の表面処理が行われる。 In the above wafer processing process, a photoresist mask is formed on the surface of the wafer, the wafer is immersed in an etching solution, and the surface of the wafer is subjected to an etching process, and the surface of the wafer after etching is washed away with water or the like. Processing takes place.
このような表面処理装置においては、処理槽が
ある程度汚れてくると、処理槽内の処理液を排出
して、当該処理槽内を、純水や有機溶剤の所要の
洗浄液で洗浄し、槽内の異物を除去した後、一定
時間処理槽内を乾燥させ、再び新しい所要の処理
液を、処理槽内にいれて、所要の基板の表面処理
を行つている。 In such surface treatment equipment, when the treatment tank becomes dirty to a certain extent, the treatment liquid in the treatment tank is drained and the inside of the treatment tank is cleaned with the required cleaning liquid such as pure water or organic solvent, and the inside of the tank is cleaned. After removing foreign matter, the inside of the processing tank is dried for a certain period of time, and a new required processing solution is poured into the processing tank again to perform the required surface treatment of the substrate.
しかし、処理槽内の新旧液の交換のための槽内
洗浄及び乾燥、とくに自然乾燥させる場合には、
例えば数時間という長時間を必要とするため、表
面処理装置の稼働率が低いという問題がある。
However, when cleaning and drying the tank to replace old and new solutions in the processing tank, especially when drying naturally,
For example, since it requires a long time of several hours, there is a problem that the operating rate of the surface treatment apparatus is low.
また、表面処理装置によつては、処理槽を装置
本体よりとりはずし、洗浄乾燥させる必要があ
る。そのために、長時間を要するに乾燥処理を省
略して、処理槽内に洗浄液を一部残した状態で再
使用しうるようにすると、新たに供給される処理
液の液質が変化し、所要の表面処理効果をあげる
ことが出来ないという問題がある。 Further, depending on the surface treatment apparatus, it is necessary to remove the treatment tank from the apparatus main body and wash and dry it. For this reason, if the drying process, which takes a long time, is omitted and some of the cleaning solution is left in the processing tank so that it can be reused, the quality of the newly supplied processing solution changes and the required amount of water is changed. There is a problem that the surface treatment effect cannot be improved.
かかる問題点を解決するため、本考案は、処理
槽内を洗浄するための洗浄液を供給する洗浄液供
給口と、処理槽内に所要の処理液を供給するため
の処理液供給口と、使用処理液及び洗浄液を処理
槽外に排出するための処理液排出口を付設した処
理槽の外面に、処理槽加熱手段を設けたことを特
徴とするものである。
In order to solve these problems, the present invention has a cleaning liquid supply port for supplying a cleaning liquid for cleaning the inside of the processing tank, a processing liquid supply port for supplying the required processing liquid into the processing tank, and a processing solution for the processing used. The present invention is characterized in that a processing tank heating means is provided on the outer surface of the processing tank, which is provided with a processing liquid outlet for discharging the liquid and the cleaning liquid to the outside of the processing tank.
この処理槽加熱手段は、例えば処理槽底壁又は
側壁を二重構造として、この内部にチヤンバーを
形成するとともに、該チヤンバー内に熱風を送排
することができる給排気口を設け、その給気口と
熱風供給手段とを連結させればよい。 This processing tank heating means, for example, has a double structure on the bottom wall or side wall of the processing tank, forms a chamber inside the chamber, and has an air supply/exhaust port that can send and exhaust hot air into the chamber. What is necessary is to connect the opening and the hot air supply means.
また、処理槽の内壁面を砂目処理して、水滴の
付着を極力防止したり、処理槽内底部の断面積
を、槽内上部の断面積より小さくして、最後に残
る洗浄液の量が少なくなるように構成することが
できる。 In addition, the inner wall surface of the treatment tank is grain-treated to prevent water droplets from adhering as much as possible, and the cross-sectional area of the bottom of the treatment tank is made smaller than the cross-sectional area of the top of the tank to reduce the amount of cleaning solution remaining at the end. It can be configured to reduce the number of
処理槽加熱手段で、洗浄液を排出した後の処理
槽を加熱することにより、処理槽内の残留液滴
は、短時間で蒸発し、完全に乾燥するため、新し
い処理液を供給した場合でも、新液に旧液の残留
液が混合することはなく、新液の液質が変化する
ことはない。
By heating the processing tank after the cleaning liquid has been discharged using the processing tank heating means, the remaining droplets in the processing tank will evaporate in a short time and dry completely, so even if new processing liquid is supplied, Residual liquid from the old liquid will not mix with the new liquid, and the liquid quality of the new liquid will not change.
また、処理槽を、その上部の断面積よりも、下
部の断面積が小さいものとしたことにより、処理
槽内の残留液を極力少なくすることができる。 Further, by making the processing tank have a lower cross-sectional area smaller than the upper cross-sectional area, the amount of residual liquid in the processing tank can be minimized.
槽内壁面を砂目処理しておくことにより、残留
液滴は、鏡面状の壁面においては液滴が粒状に付
着するのに対し、壁面に薄膜状に付着することと
なり、残留液滴の、槽の内壁面に対する接触面積
は大となり、加熱された槽の内壁より残留液滴に
熱が伝達されやすく、残留液は、短時間で蒸発す
る。 By sand-graining the inner wall surface of the tank, the residual droplets will adhere to the wall surface in a thin film form, whereas the droplets will adhere in the form of granules on a mirror-like wall surface. The contact area with the inner wall surface of the tank is large, and heat is easily transferred to the remaining droplets from the heated inner wall of the tank, and the residual liquid evaporates in a short time.
第１図は、本考案に係る表面処理装置の処理槽
の実施例を示す縦断正面図、第２図は、第１図に
おけるＡ−Ａ線縦断側面図を示す。
FIG. 1 is a longitudinal sectional front view showing an embodiment of a processing tank of a surface processing apparatus according to the present invention, and FIG. 2 is a longitudinal sectional side view taken along line A--A in FIG. 1.
処理槽１には、その上方より、表面処理液供給
管７及び排液管６が導入され、それらの各内端部
は、それぞれ処理槽１内に開口している。 A surface treatment liquid supply pipe 7 and a drain pipe 6 are introduced into the processing tank 1 from above, and each inner end thereof opens into the processing tank 1.
排液管６は、第２図に示すように、例えばアス
ピレーターのような吸液手段１３と連結されてお
り、かつ排液管６の内端は、処理槽１の底壁２０
に設けた凹部９において開口している。そのた
め、処理槽１内の処理液もしくは処理液のほとん
どを、外部に排出することができるようになつて
いる。 As shown in FIG. 2, the drain pipe 6 is connected to a liquid suction means 13 such as an aspirator, and the inner end of the drain pipe 6 is connected to the bottom wall 20 of the processing tank 1.
It opens in a recess 9 provided in the. Therefore, the processing liquid or most of the processing liquid in the processing tank 1 can be discharged to the outside.
この排液管６は、処理槽１の底壁２０に、開閉
弁を介して連結できることは言うまでもないが、
開閉弁に使用されるシール部材を腐食するおそれ
のある処理液を使用する場合には、第２図の実施
例のように構成することが好ましい。 It goes without saying that this drain pipe 6 can be connected to the bottom wall 20 of the processing tank 1 via an on-off valve;
When using a treatment liquid that may corrode the sealing member used in the on-off valve, it is preferable to configure it as in the embodiment shown in FIG.
処理槽１の上方には、該槽の内部を洗浄するた
めの洗浄液供給用のシヤワーパイプ５，５が、そ
の噴出孔5aを槽の内面に対向して配設され、槽
内の処理液１７を排出した後、シヤワーパイプ
５，５から洗浄液２２を噴出させることにより、
槽内面に付着した処理液を洗い流すようになつて
いる。 Above the processing tank 1, shower pipes 5, 5 for supplying cleaning liquid for cleaning the inside of the tank are arranged with their jet holes 5a facing the inner surface of the tank. After discharging the cleaning liquid 22, the cleaning liquid 22 is spouted from the shower pipes 5, 5.
It is designed to wash away the processing liquid adhering to the inner surface of the tank.
なお、この場合の処理液２２としては、純水、
有機溶剤、その他適宜のものを使用すればよい。 Note that the processing liquid 22 in this case includes pure water,
Organic solvents and other appropriate solvents may be used.
本考案に係る表面処理装置の処理槽１において
は、処理槽１の上部２の断面積に比して、その下
部３の断面積の方を小さくすると、排液効果上好
ましい。 In the treatment tank 1 of the surface treatment apparatus according to the present invention, it is preferable for the cross-sectional area of the lower part 3 to be smaller than the cross-sectional area of the upper part 2 of the treatment tank 1 in terms of drainage effect.
また、少なくとも処理槽１の底壁２０を二重構
造として、チヤンバー４を形成し、かつこのチヤ
ンバー４内に、熱風供給手段１０から導出された
熱風供給管１１と、チヤンバー４から熱風を排出
するための排気管１２とを接続してある。 Further, at least the bottom wall 20 of the processing tank 1 is made into a double structure to form a chamber 4, and a hot air supply pipe 11 led out from the hot air supply means 10 is provided in the chamber 4, and hot air is discharged from the chamber 4. It is connected to an exhaust pipe 12 for use.
処理槽加熱手段として、この実施例では熱風を
使用しているが、加熱された液体でもよく、さら
に、チヤンバー４内または槽の底壁２０に、パネ
ルヒーター等の加熱手段を固着してもよい。 Although hot air is used in this embodiment as the processing tank heating means, heated liquid may also be used. Furthermore, a heating means such as a panel heater may be fixed inside the chamber 4 or on the bottom wall 20 of the tank. .
処理槽１の内面には、必要に応じて、砂目処理
を施すことができる。このようにした場合には、
槽の内面に付着した液滴が粒状にならず、薄膜状
になるため、槽内壁面に付着した残留液への熱の
伝達効率が良くなる。 The inner surface of the treatment tank 1 can be subjected to grain treatment if necessary. If you do this,
Since the droplets adhering to the inner surface of the tank do not become granular but form a thin film, the heat transfer efficiency to the residual liquid adhering to the inner wall surface of the tank improves.
なお、第１，２図において、８は基板収納容
器、１７は処理液、２１は基板を示している。 In FIGS. 1 and 2, 8 indicates a substrate storage container, 17 indicates a processing liquid, and 21 indicates a substrate.
第３図は、本考案に係る表面処理装置に使用し
得る処理槽の他の実施例を示すもので、処理槽１
の底壁１５を中央部へ向かつて傾斜させ、処理液
もしくは洗浄液を排出しやすい構造としてある。
この場合、基板収納容器８は、スペーサー等、適
宜の支持部材１４上に載置するようにしても良
い。 FIG. 3 shows another embodiment of the treatment tank that can be used in the surface treatment apparatus according to the present invention.
The bottom wall 15 is inclined toward the center so that the processing liquid or cleaning liquid can be easily discharged.
In this case, the substrate storage container 8 may be placed on an appropriate support member 14 such as a spacer.
第４図および第５図は、さらに他の実施例を示
すもので、ここでは、第１図ないし第３図に図示
したような収納容器８を使用せず、第４図では、
ウエハ等の被処理基板２１の下部を、中央部へ向
かつて傾斜させた底壁１５に該設した受溝１８，
１８に嵌入して、直接立設させるようにし、第５
図では、処理槽１の底面に付設した保持杆１６に
設けた受溝１９，１９内に嵌入して立設し得るよ
うにしてある。 4 and 5 show still another embodiment, in which the storage container 8 as shown in FIGS. 1 to 3 is not used, and in FIG.
A receiving groove 18 is provided in a bottom wall 15 that slopes the lower part of the substrate 21 to be processed, such as a wafer, toward the center.
18 so that it stands directly upright, and
In the figure, it can be fitted into receiving grooves 19, 19 provided in a holding rod 16 attached to the bottom surface of the processing tank 1 so as to be erected.
次に、第１図及び第２図に基づいて、本考案の
装置による処理の要領を説明する。 Next, based on FIGS. 1 and 2, the procedure of processing by the apparatus of the present invention will be explained.
まず、被処理基板２１を収納した収納容器８
を、処理槽１の底壁２０上に載置することによ
り、あらかじめ供給管７により処理槽１内に所要
量供給され、温度等、適宜の処理条件となつてい
る処理液１７へ、被処理基板２１を一定時間浸漬
して処理する。なお、第４図及び第５図の場合に
は、収納容器８を使用ず、直後、被処理基板２１
を処理槽１内に入れることは、言うまでもない。 First, the storage container 8 containing the substrate 21 to be processed
By placing the liquid on the bottom wall 20 of the processing tank 1, the required amount is supplied into the processing tank 1 through the supply pipe 7 in advance, and the processing liquid 17, which is under suitable processing conditions such as temperature, is supplied with the to-be-processed liquid. The substrate 21 is immersed for a certain period of time for processing. In the case of FIGS. 4 and 5, the storage container 8 is not used, and the substrate to be processed 21 is immediately removed.
Needless to say, it is necessary to put the liquid into the treatment tank 1.
現像、エツチング、剥膜、洗浄等、所要の表面
処理を行つた後、被処理基板２１を処理槽１より
引き上げ、図示しないハンドリング機構により、
次の処理槽へ移送する。 After performing the necessary surface treatments such as development, etching, film peeling, and cleaning, the substrate 21 to be processed is lifted out of the processing tank 1, and then handled by a handling mechanism (not shown).
Transfer to the next treatment tank.
処理液１７は、処理時間または処理枚数によ
り、その液質が変化し、疲労するため、適当な時
間間隔で、新液と交換する必要がある。その際に
は、アスピレーター１３を作動させ、処理槽１内
の処理液１７を、底壁２０の凹部９内に開口する
排液管６により排出する。 The processing liquid 17 changes in quality depending on the processing time or the number of sheets processed and becomes fatigued, so it is necessary to replace it with new liquid at appropriate time intervals. At this time, the aspirator 13 is operated to discharge the processing liquid 17 in the processing tank 1 through the drain pipe 6 that opens into the recess 9 of the bottom wall 20.
この時、例えば第３図ないし第５図示のよう
に、処理槽１の底壁２０が傾斜していると、処理
液の排出が、より容易であることは言うまでもな
い。 At this time, it goes without saying that if the bottom wall 20 of the processing tank 1 is inclined as shown in FIGS. 3 to 5, for example, the processing liquid can be discharged more easily.
次に、シヤワーパイプ５，５より純水等の洗浄
液を噴出させて、処理槽１の内壁面に付着した旧
処理液を洗い流すとともに洗浄し、廃液を、排液
管６を介して、アスピレーター１３により排出す
る。 Next, a cleaning liquid such as pure water is jetted from the shower pipes 5, 5 to wash away the old processing liquid adhering to the inner wall surface of the processing tank 1, and the waste liquid is passed through the drain pipe 6 to the aspirator 13. It is discharged by
これと同時に、熱風供給手段１０により、チヤ
ンバー４内に熱風を供給して、処理槽１の底壁２
０より、加熱すれば、シヤワーパイプ５，５から
供給された洗浄液を外部へ排出した後、処理槽１
の内面に付着している液滴、および底壁２０の凹
部９に残留している液は、加熱され蒸発する。 At the same time, hot air is supplied into the chamber 4 by the hot air supply means 10, and the bottom wall 2 of the processing tank 1 is
When heated from 0, the cleaning liquid supplied from the shower pipes 5, 5 is discharged to the outside, and then the processing tank 1 is heated.
The droplets adhering to the inner surface of the bottom wall 20 and the liquid remaining in the recess 9 of the bottom wall 20 are heated and evaporated.
この時、処理槽１の内壁面が砂目処理されてい
ると、壁面に付着した液滴は薄膜状になるため、
熱の伝達効率がよく、乾燥も速い。 At this time, if the inner wall surface of the treatment tank 1 is grain-treated, the droplets attached to the wall surface will be in the form of a thin film.
It has good heat transfer efficiency and dries quickly.
すなわち、従来の自然乾燥方式では数時間も必
要としていた乾燥時間を、本考案では、大幅に短
縮することができる。 In other words, the drying time required by the conventional natural drying method, which required several hours, can be significantly shortened with the present invention.
(1) 処理槽に処理槽加熱手段を設けたことによ
り、処理槽の内面に付着している洗浄液を、従
来に比べて極めて短時間で乾燥させることがで
きる。
(1) By providing the processing tank with a processing tank heating means, the cleaning liquid adhering to the inner surface of the processing tank can be dried in an extremely short time compared to the conventional method.
特に、処理槽内に、整流板、レベル検知手
段、測温体、加熱手段、撹拌機構、曝気機構、
配管などが配設され、複雑な形状となつている
場合には、より効果的である。 In particular, in the processing tank, a current plate, a level detection means, a temperature measuring element, a heating means, a stirring mechanism, an aeration mechanism,
It is more effective when piping etc. are arranged and have a complicated shape.
(2) 従来、所要の処理槽を表面処理装置から取り
外して洗浄し、乾燥させていたが、その作業は
不要となり、かつ処理槽の洗浄および乾燥を自
動化することができる。(2) Conventionally, the required processing tanks were removed from the surface treatment equipment, cleaned, and dried, but this work is no longer necessary, and cleaning and drying of the processing tanks can be automated.
(3) 洗浄液を短時間で完全に乾燥することができ
るため、新しい処理液と残液とが混合して、新
しい処理液の液質が著しく低下するということ
がなく、常に所要の表面処理効果を発揮するこ
とができる。(3) Since the cleaning solution can be completely dried in a short period of time, the quality of the new processing solution will not deteriorate significantly due to mixing of the new processing solution with the remaining solution, and the desired surface treatment effect will always be maintained. can demonstrate.
(4) 処理槽底部を二重構造としてチヤンバーを形
成し、そのチヤンバー内に熱風を供給して、処
理槽を間接的に加熱しているため、ヒータ等の
加熱手段が、直接処理液と接触することがな
く、また処理液によつて、加熱手段が腐食する
等の問題が生じない。(4) The bottom of the processing tank has a double structure to form a chamber, and hot air is supplied into the chamber to indirectly heat the processing tank, so heating means such as heaters do not come into direct contact with the processing liquid. Furthermore, problems such as corrosion of the heating means due to the processing liquid do not occur.
(5) 処理槽の内面に砂目処理等、粗面化処理を施
しておくことにより、槽内残留液に対する熱の
伝達効率が、鏡面仕上したものに比べて向上
し、乾燥も速くなる。(5) By roughening the inner surface of the treatment tank, such as graining, the efficiency of heat transfer to the residual liquid in the tank is improved compared to mirror-finishing, and drying is faster.
(6) 処理槽の底壁を傾斜させておくことにより、
排水速度は極めて大となる。(6) By sloping the bottom wall of the treatment tank,
The drainage speed becomes extremely high.
第１図は、本考案に係る表面処理装置の処理槽
の一実施例を示す縦断正面図、第２図は、第１図
におけるＡ−Ａ線縦断側面図、第３図ないし第５
図は、それぞれ他の実施例を示す縦断正面図であ
る。
１……処理槽、２……上部、３……下部、４…
…チヤンバー、５……シヤワーパイプ、５ａ……
噴出孔、６……排液管、７……供給管、８……基
板収納容器、９……凹部、１０……熱風供給手
段、１１……熱風供給管、１２……排気管、１３
……吸液手段、１４……支持部材、１５……底
壁、１６……保持杆、１７……処理液、８，１９
……受溝、２０……底壁、２１……基板。
FIG. 1 is a longitudinal sectional front view showing one embodiment of a processing tank of a surface treatment apparatus according to the present invention, FIG. 2 is a longitudinal sectional side view taken along line A-A in FIG. 1, and FIGS.
The figures are longitudinal sectional front views showing other embodiments. 1... treatment tank, 2... upper part, 3... lower part, 4...
...Chamber, 5...Shower pipe, 5a...
Spout hole, 6... Drain pipe, 7... Supply pipe, 8... Substrate storage container, 9... Recess, 10... Hot air supply means, 11... Hot air supply pipe, 12... Exhaust pipe, 13
...Liquid absorption means, 14... Support member, 15... Bottom wall, 16... Holding rod, 17... Processing liquid, 8, 19
. . . receiving groove, 20 . . . bottom wall, 21 . . . substrate.
Claims (1)
するための処理槽と、 処理槽自身を洗浄する洗浄液を、処理槽内に
噴出して、槽内面に付着した処理液を洗い流す
べく、処理槽上方に配設された洗浄液供給手段
と、 上記処理槽内の上記処理液及び上記処理液を
必要に応じて排出するための排液手段と、 上記処理槽を洗浄した洗浄液が付着せいてい
る処理槽を、加熱し乾燥させるべく、少なくと
も処理槽の底壁もしくは処理槽の側壁のいずれ
かに隣接して、処理槽と一体に形成されたチヤ
ンバー内に熱風を供給する処理槽加熱手段 を具備してなる表面処理装置。 (2) 処理槽の内面を粗面化処理してなる実用新案
登録請求の範囲第(1)項に記載の表面処理装置。 (3) 処理槽下部の断面積を、処理槽の上部の断面
積より小さくしてなる、実用新案登録請求の範
囲第(1)項又は第(2)項に記載の表面処理装置。 (4) 処理槽の底壁が傾斜している実用新案登録請
求の範囲第(1)項ないし(3)項のいずれかに記載の
表面処理装置。 (5) 底壁が処理槽の中央部へ向つて下向きに傾斜
している実用新案登録請求の範囲第(4)項に記載
の表面処理装置。[Scope of Claim for Utility Model Registration] (1) A treatment tank for surface treatment by immersing the object to be treated in a required treatment liquid, and a cleaning liquid for cleaning the treatment tank itself spouted into the treatment tank. a cleaning liquid supply means disposed above the processing tank to wash away the processing liquid adhering to the inner surface; a drainage means for discharging the processing liquid in the processing tank and the processing liquid as necessary; A chamber integrally formed with the processing tank, adjacent to at least either the bottom wall of the processing tank or the side wall of the processing tank, in order to heat and dry the processing tank to which the cleaning liquid used to clean the processing tank is attached. A surface treatment apparatus comprising a treatment tank heating means for supplying hot air into the treatment tank. (2) The surface treatment device according to claim (1), which is obtained by roughening the inner surface of the treatment tank. (3) The surface treatment device according to claim 1 or 2, wherein the cross-sectional area of the lower part of the treatment tank is smaller than the cross-sectional area of the upper part of the treatment tank. (4) The surface treatment device according to any one of claims (1) to (3) of the utility model registration claim, in which the bottom wall of the treatment tank is inclined. (5) The surface treatment device according to claim (4), wherein the bottom wall is inclined downward toward the center of the treatment tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985067415U JPH0238439Y2 (en) | 1985-05-09 | 1985-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985067415U JPH0238439Y2 (en) | 1985-05-09 | 1985-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183528U JPS61183528U (en) | 1986-11-15 |
| JPH0238439Y2 true JPH0238439Y2 (en) | 1990-10-17 |
Family
ID=30601219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985067415U Expired JPH0238439Y2 (en) | 1985-05-09 | 1985-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0238439Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006147672A (en) * | 2004-11-17 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | Substrate rotation type treatment device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068067A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS5599725A (en) * | 1979-01-26 | 1980-07-30 | Matsushita Electric Ind Co Ltd | Method and device for manufacturing semiconductor device |
| JPS5745237A (en) * | 1980-09-01 | 1982-03-15 | Fujitsu Ltd | Rotary processing device |
| JPS5830753A (en) * | 1981-08-17 | 1983-02-23 | Hitachi Ltd | Method for regerating developing solution |
| JPS5924849A (en) * | 1982-08-02 | 1984-02-08 | Hitachi Ltd | Cleaning method of photomask |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53166861U (en) * | 1977-06-01 | 1978-12-27 |
-
1985
- 1985-05-09 JP JP1985067415U patent/JPH0238439Y2/ja not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068067A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS5599725A (en) * | 1979-01-26 | 1980-07-30 | Matsushita Electric Ind Co Ltd | Method and device for manufacturing semiconductor device |
| JPS5745237A (en) * | 1980-09-01 | 1982-03-15 | Fujitsu Ltd | Rotary processing device |
| JPS5830753A (en) * | 1981-08-17 | 1983-02-23 | Hitachi Ltd | Method for regerating developing solution |
| JPS5924849A (en) * | 1982-08-02 | 1984-02-08 | Hitachi Ltd | Cleaning method of photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183528U (en) | 1986-11-15 |
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