JPS60163436A - Method for cleaning and drying of semiconductor material - Google Patents
Method for cleaning and drying of semiconductor materialInfo
- Publication number
- JPS60163436A JPS60163436A JP1824984A JP1824984A JPS60163436A JP S60163436 A JPS60163436 A JP S60163436A JP 1824984 A JP1824984 A JP 1824984A JP 1824984 A JP1824984 A JP 1824984A JP S60163436 A JPS60163436 A JP S60163436A
- Authority
- JP
- Japan
- Prior art keywords
- water
- wafer
- washing
- semiconductor material
- rinsing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Abstract
Description
【発明の詳細な説明】
本発明は片面をエツチングされたシリコンウェハやガラ
スフォトマスクなどの半導体材料を水洗し且つ乾燥する
ための方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for washing and drying semiconductor materials such as silicon wafers and glass photomasks that have been etched on one side.
薄膜状の半導体材料の片側の表面に半導体配線回路を形
成する場合、半導体材料の表面に金属薄膜または酸化膜
を施こし且つ感光液【フォトレジスト）を該材料表面の
所定部分に薄膜状に塗布し、それを焼付けて現像処理を
行ない、配線回路となルハターンを形成した後にエラチ
ングラ行ナイ、パターンが形成されている部分以外の部
分の金属薄膜を除去し、次いでフォトレジストを剥離す
ることによって半導体配線回路を形成している。When forming a semiconductor wiring circuit on one surface of a thin film semiconductor material, a thin metal film or oxide film is applied to the surface of the semiconductor material, and a photosensitive liquid (photoresist) is applied in a thin film form to a predetermined portion of the surface of the material. Then, it is baked and developed to form wiring circuits and pattern patterns, and then the metal thin film is removed from areas other than the areas where the patterns are formed, and then the photoresist is peeled off to form a semiconductor. Forms a wiring circuit.
しかるに従来技術ではエツチングされた半導体祠料はヂ
ャツクヘνドにより水洗槽に移動され、そこで回路が形
成される表面のみを水洗した後、所謂「プール」と言わ
れる水槽内に置かれたキャリヤ内に収められ、通常は２
５〜５０枚の所定数のウェハがキャリヤ内に収められた
後、キャリヤごと次の乾燥工程に移動された。従って、
初めにキャリヤ内に収められた半導体材料は長い時間を
プール内の水中に置かれる。例えばキャリヤ内に２５枚
の材料が収められる場合、１枚の材料に要する処理時間
を６分とすれば、最初に収められた材料は７２分間水中
に保たれることになる。プール内には各材料に僅かなが
ら残留したエツチング液が持込まれるため、持込まれた
エツチング液によりイオンが生じ、それにより材料の表
面が反応を受け、さらに材料の表面は長時間水中に浸す
と変化する欠点があった。However, in the prior art, the etched semiconductor material is moved by a jack to a washing tank, where only the surface on which the circuit will be formed is washed with water, and then placed in a carrier placed in a water tank called a "pool". stored, usually 2
After a predetermined number of 5 to 50 wafers were placed in the carrier, the carrier was moved to the next drying step. Therefore,
The semiconductor material, initially placed in a carrier, remains submerged in water in a pool for an extended period of time. For example, if 25 sheets of material are placed in a carrier, and the processing time required for each sheet is 6 minutes, the first placed material will remain underwater for 72 minutes. A small amount of etching solution left on each material is brought into the pool, so ions are generated by the etching solution, which causes reactions on the surface of the material, and the surface of the material changes when immersed in water for a long time. There was a drawback.
本発明の目的は上記従来技術の欠点を解消することであ
って、それ放生導体材料の裏面［まわり込んだエツチン
グ液をも除去し得ると共に水洗後にプール中に浸けるこ
となく直ちに乾燥するようにした半導体材料の洗浄乾燥
方法を提供することである。The purpose of the present invention is to solve the above-mentioned drawbacks of the prior art, and it is possible to remove the etching solution that has gotten around to the back side of the radiation conductor material, and also to dry it immediately after washing with water without having to immerse it in a pool. An object of the present invention is to provide a method for cleaning and drying semiconductor materials.
本発明による半導体材料の洗浄乾燥方法の特徴はカップ
状の水洗槽の上において表面を下向きにした半導体材料
が下方のウォータノズルにより予備水洗した后に下方か
ら吹き上げる純水により本水洗し、その際に上側の裏面
も水洗し、次いで回転装置により水切乾燥を行なうよう
にしたことである。The feature of the method for cleaning and drying semiconductor materials according to the present invention is that the semiconductor material, whose surface is facing downward, is placed on top of a cup-shaped water washing tank, and is preliminarily washed with water by a water nozzle located below. The upper back surface was also washed with water, and then dried using a rotating device.
次に図面を参照のもとに本発明に関し説明する。Next, the present invention will be explained with reference to the drawings.
第１図は本発明の洗浄乾燥方法を実施する工程を含むエ
ツチングを行なうシステムの一例を承すものであって、
図において（１）は所定数の半導体材料、この実施例で
はシリコンウェハ（Ｓ）を収め得る第１のキャリヤであ
り、（２）は第１のステージ、（３）はウェハの反転用
装置、（４）は第２のステージ、（５）はエツチング前
の水洗装置、（６）はエツチング装置、（７）は本発明
による方法の一部が実施される水洗装置、（８）は反転
装置、（９）は回転装置、０ωはウェハを順次に搬送す
る装置であり、この装置には真空による吸盤を備えたチ
ャックヘゲ）’（Ｉｌｌ在ル。FIG. 1 shows an example of an etching system including a step of carrying out the cleaning and drying method of the present invention.
In the figure, (1) is a first carrier capable of containing a predetermined number of semiconductor materials, in this example silicon wafers (S), (2) is a first stage, (3) is a device for reversing the wafer, (4) is a second stage, (5) is a washing device before etching, (6) is an etching device, (7) is a washing device in which a part of the method according to the present invention is carried out, and (8) is a reversing device. , (9) is a rotating device, and 0ω is a device that sequentially transfers wafers.This device includes a chuck equipped with a vacuum suction cup.
このシステムでは第１のキャリヤｔｌｌ内に収められた
ウェハは適当な送り装置（１３１によって一枚づつ１幀
次に表面を上側にして第１のステージ（２）の上に載置
され、ステージ（２１上のウェハは先端に吸盤を備えた
反転装置（３）により反転されて表面を下向きにした状
態で第２のステージ（４）の上に載せられる。In this system, the wafers housed in the first carrier tll are placed one by one on the first stage (2) with the surface facing upward by a suitable feeding device (131). The wafer on 21 is inverted by an inverting device (3) equipped with a suction cup at the tip and placed on the second stage (4) with its surface facing downward.
ステージ（４）の上のウェハは搬送装置（１０１により
水洗装置ｔ １５） ＶＣｓ動され、エツチング前の予
備水洗を行ない、次いで搬送装置（１αによりエツチン
グ装置（６）の上に、配線回路が形成される表面を−Ｆ
向きにしたまま移載され、そこで下から吹き上げろエツ
チング液によってエツチングが行なわれる。The wafer on the stage (4) is transferred to the transfer device (101 to the washing device t15) for preliminary washing before etching, and then transferred to the etching device (6) by the transfer device (1α) to form a wiring circuit. −F
It is then transferred with its orientation facing the same direction, where it is etched using an etching solution that is blown up from below.
本発明はエツチング終了後の洗浄および乾燥に関するも
ので、ウェハの上側になっている裏面の乾燥まではエツ
チング後の水洗装置（力で行なわれる。即ち、ウェハの
下向きの表面がエツチングされると、第１図の実施例で
は搬送装置（圃のチャックヘッド旧）により表面が下向
きのままウェハを吸着して水洗装置（７）、に移動し、
そこで第２図に示すように、カップ状の水洗槽（＋４１
の上に水平にウェハ（Ｓ）を支持する。ウニバカ玉所定
位置に至ると、先ず槽Ｇ、４）内の適当な位置に設けら
れたウォータノズル（１５１によりウェハの下向きの表
面に純水を噴射し、予備的に水洗する。この水洗はウォ
ータジェットによって行なわれるので、早急になされ、
従ってエツチング液を素早く除去するのでウェハの表面
から完全にエツチング液を除去でき且つスティン膜が形
成されるのを防ぐ。The present invention relates to cleaning and drying after etching is completed, and the drying of the upper back side of the wafer is carried out using a post-etching water rinsing device (forced). In other words, once the downward surface of the wafer is etched, In the embodiment shown in Fig. 1, the wafer is adsorbed with the surface facing downward by the transport device (old chuck head in the field) and moved to the water washing device (7).
Therefore, as shown in Figure 2, a cup-shaped washing tank (+41
The wafer (S) is supported horizontally on top of the wafer (S). When the Unibaka ball reaches a predetermined position, first, a water nozzle (151) installed at an appropriate position in tank G, 4) sprays pure water onto the downward surface of the wafer for preliminary washing. It is done by jet, so it should be done as soon as possible.
Therefore, since the etching solution is quickly removed, the etching solution can be completely removed from the surface of the wafer and the formation of a stain film can be prevented.
次いで槽Ｑ４）の底部に設けられた通路ｔｔｅを通して
純水を吹き上げ、ウェハ表面の本水洗を行なう。Next, pure water is blown up through a passage tte provided at the bottom of the tank Q4) to perform main water washing of the wafer surface.
この本水洗に移行した後にチャックヘッド０Ｄの吸着が
解かれ、搬送装置（１０）は第２のステージ（４）の位
置に戻り、その上に置かれた次のウェハを同様に搬送す
る。本水洗においては下から吹き上げる水ＶＣよりウェ
ハは水洗槽■の上に浮いた状態に保たれる。この本水洗
は通常、２〜６分１■１行なわれ、槽（Ｉ４）の上にウ
ェハが浮いた状態で上側になっているウェハの裏面を好
ましくは／ヤワー装置０ηによりシャワー水洗を行なう
。この／ヤワー水洗は前のエツチング工程においてウェ
ハの裏面にまわり込んで付着した工・ンチング液または
エツチングによる反応ガスを洗い落すものであり、本水
洗に比し短時間でよい。そしてシャワー水洗の直後にウ
ェハの裏面に対しガスノズル（田によりカスブローを行
ない、乾燥させる。このガスブローは窒素ガスで行なう
のが好ましい。After shifting to this main water washing, the adsorption of the chuck head 0D is released, the transfer device (10) returns to the position of the second stage (4), and similarly transfers the next wafer placed thereon. In the main washing, the wafer is kept floating above the washing tank (2) by the water VC blown up from below. This main water washing is usually carried out for 2 to 6 minutes, and the back side of the wafer, which is on the upper side with the wafer floating above the tank (I4), is preferably washed with shower water using a shower device 0η. This/Yowa water washing is for washing off the processing solution or reaction gas caused by etching that has gotten around and adhered to the back surface of the wafer in the previous etching process, and requires a shorter time than the main water washing. Immediately after washing with water in the shower, the back surface of the wafer is subjected to gas blowing with a gas nozzle to dry it. This gas blowing is preferably performed with nitrogen gas.
ウェハの裏面に対する水洗およびガスブローは前記吹き
上げ水による本水洗の間に行なわれる。Water washing and gas blowing to the back side of the wafer are performed during the main washing with the blown-up water.
ガスブローは本水洗の終了の直前に終るのが好ましく、
そのため本水洗が成る程度行なわれた後にシャワー水洗
を行なってもよい。なお、ウニ／・裏面の水洗は必ずし
もシャワー水洗である必要はなく、単に水を注ぐことに
よっても行なうことができる。また本水洗およびウニ／
・裏面の水洗は若干加熱された純水、例えば６０度Ｃ程
度の純水によって行なうのが好ましく、そのように加熱
された水を用いれば洗浄を促進できる。It is preferable that the gas blowing ends immediately before the end of the main washing.
Therefore, shower washing may be performed after the main washing has been completed. Note that washing the back side of sea urchins with water does not necessarily have to be done by shower washing, and can also be done by simply pouring water. In addition, main water washing and sea urchin/
- It is preferable to wash the back surface with slightly heated pure water, for example, pure water of about 60 degrees Celsius, and using such heated water can accelerate the washing.
次いで反転装置（８）の先端の吸盤により、乾燥された
ウェハの裏面を吸着して反転しながら、モータで回転さ
れる回転装置（９）の上に移動する。この／ステムに用
いられた回転装置（９）は第６図に示すように、中空の
主軸α９とその先端に備えられた真空による吸盤ｃ２０
）を含み、主軸の他端は電磁弁（２１）を介して分岐管
になっており、その一方の管（２２）が真空源に、他方
の管（２３）が窒素ガスの源に連通し、吸盤（ａがウェ
ハを吸引しないときは窒素ガスを流出して空気の吸引を
防止している。この回転装置（９）は吸盤■でウェハの
裏面を吸着した状態で回転し、通常１０００〜８０００
ｒｐｍで回転して、水リノ乾燥を行なう。水切乾燥され
たウェハは適当な送り装置１２４）により、別のキャリ
ヤ（Ｉ２１ニア）中に順に装入され、ギヤリヤ（Ｉ２１
内に所定枚数のウェハが収められると、次の処理工程に
送らｎる。Next, the back surface of the dried wafer is sucked by a suction cup at the tip of the reversing device (8), and the wafer is reversed while being moved onto a rotating device (9) rotated by a motor. As shown in FIG. 6, the rotating device (9) used for this /stem consists of a hollow main shaft α9 and a vacuum suction cup C20 provided at its tip.
), and the other end of the main shaft is a branch pipe via a solenoid valve (21), one pipe (22) of which communicates with a vacuum source and the other pipe (23) with a nitrogen gas source. , When the suction cup (a) is not suctioning the wafer, nitrogen gas flows out to prevent suction of air. 8000
Perform water lino drying by rotating at rpm. The drained and dried wafers are sequentially loaded into another carrier (I21 near) by a suitable feeding device 124), and the gear carrier (I21
When a predetermined number of wafers are accommodated in the chamber, they are sent to the next processing step.
なお、」二記の実施例では反転装置（８）により回転装
置Ｑ Ｃ９１にウニ・・を移載しているが、反転装置（
８）を用いなくても可能であり、例えば第４図に示すよ
うに、回転装置（９）自体を可動にし、水洗槽ｆ１４１
の位置に回転装置（９）を移動し、直接ウェハを吸着し
て別の位置に移動し、水切乾燥を行なった後、例えば窒
素ガスの吹出しによる搬送を行なうエアーベアリングＣ
２５）につ刊ハを、その表面がＦ向きのまま載せて、キ
ャリヤ＋１２１に搬送することもできる。In addition, in the embodiment described in section 2, the sea urchins are transferred to the rotating device QC91 using the reversing device (8), but the reversing device (
8). For example, as shown in FIG. 4, the rotating device (9) itself can be made movable and the washing tank
The rotating device (9) is moved to the position, the wafer is directly adsorbed, the wafer is moved to another position, the wafer is drained and dried, and then the air bearing C is transported by blowing out nitrogen gas, for example.
25) It is also possible to place the magazine C on the paper with its surface facing F and transport it to the carrier +121.
上記の実施例では７リコンウエハについて述べられてい
るが、ガラスフォトマスクまたは他の薄板状の半導体Ｈ
料についても同様に実施し得ることは言うまでもない。Although the above example describes a 7 silicon wafer, a glass photomask or other thin semiconductor wafer may be used.
It goes without saying that the same approach can be taken for fees as well.
また、上記のシステムでは半導体材料を水洗槽（１４）
の上に浮かせた状態でその裏面を水洗しているが、エツ
チング終了後に第５図および第６図に示すように、進退
自在のアーム（３０）、（３１）に設けられた把持部Ｃ
３２）、「３３）、Ｉ３４）、Ｃ３５） で４Ａ泊１（
Ｓ）をチャックヘッド旧）より移し取り、水洗槽（１（
イ）の上に支持し、表裏両面を水洗してもよい。図中、
１３６）は次の回転工程への回動部である。In addition, in the above system, semiconductor materials are washed in a water washing tank (14).
The back side of the etching was washed with water while it was floating on top, and after the etching was completed, as shown in Figs.
32), ``33), I34), C35) and 4A nights 1 (
Transfer S) from the old chuck head) and place it in the washing tank (1(
It may be supported on top of (a) and washed with water on both the front and back sides. In the figure,
136) is a rotating part for the next rotation process.
さらに水切乾燥のための半導体材料の回転も、第７図に
示すように、回転する主軸ｆ４０） Ｋ枢止された複数
の線材で作られたグリ・ソバ−（４１）からなり、各グ
リッパ−の下端の屯り【４２）が広がることにより上端
のＶ形の保持部１４３）が狭まるように構成された回転
装置を用い、図示のように保持部Ｃ４３）に半導体４′
Ａ料（Ｓ）を保持して行なってもよく、この場合にはガ
スブローによる半導体４Ａ別の乾燥は必要としない。Furthermore, as shown in FIG. 7, the rotation of the semiconductor material for draining and drying is carried out using a rotating main shaft f40), which consists of a gripper (41) made of a plurality of wire rods that are pivoted, and each gripper As shown in the figure, a semiconductor 4'
The drying process may be carried out by holding the material A (S), and in this case, separate drying of the semiconductor 4A by gas blowing is not required.
上記のように、本発明による洗浄乾燥方法では半導体材
料の表面は適切に水洗されると共［裏面も水洗するため
エツチング液を完全に除去することができ、且つ洗浄さ
れた材料は水中に浸けろことなく直ちに乾燥することに
より、残留したエツチング液との反応や水中に浸したこ
とによる変化を受けろことがなく、半導体材料の品質を
向上することかできる。As mentioned above, in the cleaning and drying method according to the present invention, the surface of the semiconductor material is properly washed with water, the back side is also washed with water, so the etching solution can be completely removed, and the cleaned material is immersed in water. By drying thoroughly and immediately, the quality of the semiconductor material can be improved without being affected by reactions with residual etching solution or changes caused by immersion in water.
第１図は本発明による方法を行なう工程を含むシステム
の一例の平面図、第２図は本発明における水洗工程を行
なう装置の概略図、第６図は本発明しこおけろ水切乾燥
を行なう回転装置の概略図、第４図は水防乾燥の他の方
式を示す概略図、第５図は水洗槽の上に半導体材料を支
持する他の方式を・示す平面図、第６図は第５図の実施
例での水洗工程を図式的に示す図、第７図は他の回転装
置の立面図である。
図中、７・・・水洗装置、９・・・回転装置、１トチャ
ノクヘノド、１４・・・水洗槽、１５・・ウォータノズ
ル、１７・・・シャワー装置、１８・・ガスノズル第４
図
／
６FIG. 1 is a plan view of an example of a system including a step of performing the method according to the present invention, FIG. 2 is a schematic diagram of an apparatus for performing a washing step of the present invention, and FIG. A schematic diagram of a rotating device, FIG. 4 is a schematic diagram showing another method of waterproof drying, FIG. 5 is a plan view showing another method of supporting semiconductor materials on a washing tank, and FIG. FIG. 7 is a diagram schematically showing the water washing process in the embodiment shown, and FIG. 7 is an elevational view of another rotating device. In the figure, 7...Water washing device, 9...Rotating device, 1 Tochanokhenode, 14...Washing tank, 15...Water nozzle, 17...Shower device, 18...Gas nozzle 4th
Figure/6
Claims (1)
の水洗槽の上にエツチングされた表面を下側にして水平
に支持し且つ前記槽内に備えられたウォータノズルから
のウォータジェットにより前記材料の表面を予備水洗し
、次いで前記槽の下部より吹き上゛げる純水により前記
表面を水洗する段階と、前記水洗中に半導体材料の上側
になっている裏面を上方より水を落して水洗する段階と
、次いで半導体材料を回転して水切乾燥を行なう段階と
を含む半導体材料の洗浄乾燥方法。 ＋２１ 、特許請求の範囲第１項に記載の方法において
、さらに半導体材料の裏面を水洗した後にガスブローを
行なって該裏面を乾燥する段階を含み、半導体材料の回
転はその裏面で吸着された状態で行なわれる半導体材料
の洗浄乾燥方法。 （３）、特許請求の範囲第１項に記載の方法において、
前記半導体材料の裏面の水洗はシャワーによって行なわ
れる半導体材料の洗浄乾燥方法。 （４）、特許請求の範囲第２項に記載の方法において、
前記シャワー水洗は前記吹上げ水による洗浄がある程度
なされた後に行なわれる半導体）ｌＡ料の洗浄乾燥方法
。 （５）、特許請求の範囲第１項に記載の方法において、
前記水切乾燥は反転装置により反転して回転装置に載せ
ることによって行々われる半導体利料の洗浄乾燥方法。 （６）、特許請求の範囲第１項に記載の方法において、
半導体材料の表面の前記水洗は加熱された純水によって
行なわれる半導体材料の洗浄乾燥方法。[Claims] (1) A semiconductor material etched on one side is supported horizontally on a cup-shaped water washing tank with the etched surface facing downward, and a water nozzle provided in the tank is provided. A step of pre-rinsing the surface of the material with a water jet, and then rinsing the surface with pure water blowing up from the bottom of the tank; A method for washing and drying a semiconductor material, which includes a step of removing more water and rinsing the material, and then a step of rotating the semiconductor material to drain and dry it. +21, in the method according to claim 1, further comprising the step of washing the back side of the semiconductor material with water and then blowing gas to dry the back side, and the rotation of the semiconductor material is performed while the back side is adsorbed on the back side. A cleaning and drying method for semiconductor materials. (3) In the method according to claim 1,
A method for cleaning and drying a semiconductor material, wherein the back surface of the semiconductor material is washed with water using a shower. (4) In the method according to claim 2,
In the method for washing and drying a semiconductor material, the shower washing is performed after a certain amount of washing with the blown-up water has been carried out. (5) In the method according to claim 1,
In the method of washing and drying semiconductor materials, the draining and drying is performed by inverting the semiconductor material using an inverting device and placing it on a rotating device. (6) In the method according to claim 1,
A method for cleaning and drying a semiconductor material, wherein the washing of the surface of the semiconductor material is performed using heated pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1824984A JPS60163436A (en) | 1984-02-06 | 1984-02-06 | Method for cleaning and drying of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1824984A JPS60163436A (en) | 1984-02-06 | 1984-02-06 | Method for cleaning and drying of semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60163436A true JPS60163436A (en) | 1985-08-26 |
| JPH0463539B2 JPH0463539B2 (en) | 1992-10-12 |
Family
ID=11966402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1824984A Granted JPS60163436A (en) | 1984-02-06 | 1984-02-06 | Method for cleaning and drying of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60163436A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260027U (en) * | 1985-09-04 | 1987-04-14 | ||
| JPH02144333A (en) * | 1988-07-01 | 1990-06-04 | Tokyo Electron Ltd | Substrate conveying method |
| JPH02127033U (en) * | 1989-03-28 | 1990-10-19 | ||
| JPH0332428U (en) * | 1989-08-04 | 1991-03-29 | ||
| US5930549A (en) * | 1996-11-21 | 1999-07-27 | Samsung Electronics Co., Ltd. | Developing device for semiconductor device fabrication and its controlling method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4862772U (en) * | 1971-11-16 | 1973-08-09 | ||
| JPS5180161A (en) * | 1975-01-09 | 1976-07-13 | Suwa Seikosha Kk | |
| JPS5544780A (en) * | 1978-09-27 | 1980-03-29 | Toshiba Corp | Cleaning device for semiconductor wafer |
| JPS5594043U (en) * | 1978-12-21 | 1980-06-30 | ||
| JPS5652197U (en) * | 1979-09-27 | 1981-05-08 | ||
| JPS57160131A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Washing cell |
| JPS5994425A (en) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | Manufacturing device for semiconductor |
-
1984
- 1984-02-06 JP JP1824984A patent/JPS60163436A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4862772U (en) * | 1971-11-16 | 1973-08-09 | ||
| JPS5180161A (en) * | 1975-01-09 | 1976-07-13 | Suwa Seikosha Kk | |
| JPS5544780A (en) * | 1978-09-27 | 1980-03-29 | Toshiba Corp | Cleaning device for semiconductor wafer |
| JPS5594043U (en) * | 1978-12-21 | 1980-06-30 | ||
| JPS5652197U (en) * | 1979-09-27 | 1981-05-08 | ||
| JPS57160131A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Washing cell |
| JPS5994425A (en) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | Manufacturing device for semiconductor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260027U (en) * | 1985-09-04 | 1987-04-14 | ||
| JPH02144333A (en) * | 1988-07-01 | 1990-06-04 | Tokyo Electron Ltd | Substrate conveying method |
| JPH02127033U (en) * | 1989-03-28 | 1990-10-19 | ||
| JPH0332428U (en) * | 1989-08-04 | 1991-03-29 | ||
| JPH0648848Y2 (en) * | 1989-08-04 | 1994-12-12 | 大日本スクリーン製造株式会社 | Cassette Alignment Device for Dual Cassette Type Substrate Processing Equipment |
| US5930549A (en) * | 1996-11-21 | 1999-07-27 | Samsung Electronics Co., Ltd. | Developing device for semiconductor device fabrication and its controlling method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0463539B2 (en) | 1992-10-12 |
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