JPS6161425A - Cleaning device for semiconductor wafer - Google Patents

Abstract

PURPOSE:To enable to leave the film thickness of an aluminum film, which is equivalent to an amount enough for the aluminum film to be able to bear against bonding, by a method wherein fluid in the washing vessel is all drained and after pure water is supplied while the pure water is jetted to a semiconductor wafer from the shower nozzles, the pure water is made to overflow and the semiconductor is cleansed. CONSTITUTION:The semiconductor wafer, which is already performed an etching, is put in the washing vessel, the on-off valve of a drainage pipe 6 is opened, the fluid in the washing vessel is all drained in a short time, and at the same time as the time when the drainage finishes, pure water is discharged toward the semiconductor wafer from shower nozzles 1, 2, 3 and 4 so as not to make the surface of the semiconductor wafer dry. Then, the on-off valve of the drainage pipe 6 is shutted, pure water is put in from an overflow water supply pipe 5 to make the pure water overflow and the semiconductor wafer is cleansed while the pure water is drained through an overflow drainage pipe 7. This cycle is repeatedly performed several times.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer cleaning apparatus for cleaning semiconductor wafers after etching treatment.

[Prior art]

In the manufacturing process of a semiconductor device, there is a step of making a hole in a cover film for bonding onto an aluminum electrode. Conventionally, in order to clean a semiconductor wafer after etching in this process, a part of the cleaning liquid in the washing tank is withdrawn for 1 to 2 seconds, and then pure water is supplied to cause an overflow, or bubbling with N2 gas, Or cleaning with ultrasonic waves was performed.

[Problem that the invention seeks to solve]

However, with the above method, it is difficult to sufficiently replace the etching solution such as hydrofluoric acid with pure water for cleaning, so the aluminum electrode under the cover film is not sufficiently replaced with pure water. It was etched with dilute hydrofluoric acid,
There was a drawback that the film thickness became thinner, which caused problems during bonding in the subsequent process.The present invention solves the above problem by sufficiently replacing the etching solution with pure water. The present invention provides an apparatus in which a sufficient thickness of an aluminum electrode can be left to withstand bonding.

[Means for solving problems]

The present invention includes a drain pipe 6 for draining the combined liquid in the washing tank 10 when an etched semiconductor wafer is put into the washing tank 10, an overflow water supply pipe 5 for supplying pure water into the drained washing tank 10, An overflow drain pipe 7 for draining pure water overflowing from the washing tank 10 is installed at the bottom of the washing tank 10, and a shower nozzle 1, 2 for spraying pure water onto the semiconductor wafer 71 at the same time as draining through the drain pipe 6; 3
．． This is a semiconductor wafer cleaning apparatus characterized in that 4 is installed at the top and side of a washing tank 10.

[Effect]

Semiconductor waeno'I at shower nozzles 1, 2, 3.4
While injecting pure water to t2.3.4, drain pipe 6 and f) tank 1.
After draining the combined liquid in the tank 10, pure water is supplied into the tank 10 through the water supply pipe 5, and the semiconductor wafers are washed while overflowing the purified water.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

In FIG. 1, there is a drain pipe 6 that drains the combined liquid in the washing tank 10 when an etched semiconductor wafer is put into the washing tank 10, and an overflow water supply pipe 5 that supplies pure water into the drained washing tank 10. and an overflow drain pipe 7 for discharging the overflowing pure water from the washing tank 10 are installed at the bottom of the washing tank, and shower nozzles 1 and 2 are installed at the bottom of the washing tank, and simultaneously spray the pure water onto the semiconductor wafers at the same time as draining through the drain pipe 6. ．．
3.4 are installed on the top and side of the washing tank 10. 8,
9 is a pipe that supplies pure water to the shower nozzle.

In addition, the installation angle and position of shower nozzle 1.3, nozzle 2
,4. , the inner diameter and flow rate of each water supply and drainage pipe 5, 6.7 are set to optimal values according to the cleaning capacity.

Next, a method of operating the apparatus of the present invention will be explained.

The etched semiconductor wafer is placed in the washing tank 10, and the on-off valve of the drain pipe 6 is opened to drain the combined liquid in the washing tank 10 in a short time. Then, at the same time as draining the liquid, the shower nozzle 1.
From 2 and 3.4, pure water is discharged toward the semiconductor wafer to prevent the surface of the semiconductor wafer from drying out. Next, the on-off valve of the drain pipe 6 is closed, and pure water is poured into the overflow water supply pipe 5 to overflow and drain through the overflow drain pipe 7, while cleaning the semiconductor wafer. Repeat this cycle several times.

Figure 2 shows the relationship between the withdrawal time, shower water supply, and film thickness of the aluminum electrode.
After draining everything inside, spraying pure water onto the semiconductor wafer using a shower nozzle, and then supplying water, the aluminum film is left thick enough to withstand bonding by overflowing and cleaning. I got the results that I can.

〔Effect of the invention〕

As explained above, the present invention completely drains the etching liquid using the drain pipe, injects pure water with the shower nozzle, and supplies overflow pure water from the bottom, so that the etching solution can be replaced with pure water. This has the advantage of being able to complete the process in a short period of time and leaving a sufficient thickness of the aluminum electrode to withstand pounding.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a semiconductor wafer cleaning apparatus of the present invention, and FIG. 2 is a diagram showing the relationship between the drawing time, water supply from a shower nozzle, and the aluminum electrode film thickness after etching. 1.2, 3.4... Shower nozzle, 5... Overflow water supply pipe, 6... Drain pipe, 7... Overflow drain pipe, 8.9... Piping patent applicant Yamagata NEC Co., Ltd. Company recruitment Fff questions

Claims (1)

[Claims] (1) When an etched semiconductor wafer is put into the washing tank, there is a drain pipe that drains all the liquid from the tank, an overflow water supply pipe that supplies pure water to the drained washing tank, and a drain pipe that drains all the liquid from the washing tank, and an overflow water pipe that supplies pure water to the washing tank that overflows from the washing tank. An overflow drain pipe for draining pure water is installed at the bottom of the washing tank, and a shower nozzle for spraying pure water onto the semiconductor wafers at the same time as the water is drained by the drain pipe is installed at the top and side of the washing tank. Semiconductor wafer cleaning equipment.