KR200162275Y1 - Device for preventing deposition of contaminants in chemical vapor deposition apparatus - Google Patents

Device for preventing deposition of contaminants in chemical vapor deposition apparatus Download PDF

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Publication number
KR200162275Y1
KR200162275Y1 KR2019940002341U KR19940002341U KR200162275Y1 KR 200162275 Y1 KR200162275 Y1 KR 200162275Y1 KR 2019940002341 U KR2019940002341 U KR 2019940002341U KR 19940002341 U KR19940002341 U KR 19940002341U KR 200162275 Y1 KR200162275 Y1 KR 200162275Y1
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KR
South Korea
Prior art keywords
closing door
chemical vapor
vapor deposition
foreign matter
quartz boat
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KR2019940002341U
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Korean (ko)
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KR950025880U (en
Inventor
송종부
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김영환
현대반도체주식회사
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Priority to KR2019940002341U priority Critical patent/KR200162275Y1/en
Publication of KR950025880U publication Critical patent/KR950025880U/en
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Publication of KR200162275Y1 publication Critical patent/KR200162275Y1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Abstract

본 고안은 화학기상 증착장치의 이물질 부착 방지장치에 관한 것으로, 화학기상 증착장치의 입구 개폐용 문(2)의 상부에 이물질 부착 방지용 덮개(1), (1')가 결합되어 입구 개폐용 문(2)의 표면과 석영보트(5)의 하면에 증착물이 부착됨을 방지하도록 구성되어 있으며, 이러한 본 고안은 입구 개폐용 문(2)의 상부에 결합된 이물질 부착 방지용 덮개(1), (1')가 스테인레스로 된 입구 개폐용 문(2)의 표면과 석영보트 받침대(8)의 표면에 증착물이 부착되는 것을 막아주기 때문에 종래와 같이 스테인레스재 입구 개폐용 문(2)과 석영보트 받침대(8)에 부착된 증착물을 일일이 수작업으로 제거하여야 번거롭고 까다로운 작업을 해소할 수 있어 작업성을 향상할 수 있는 이점이 있다.The present invention relates to a foreign matter adhesion prevention device of the chemical vapor deposition apparatus, the foreign matter adhesion prevention cover (1), (1 ') is coupled to the upper part of the entrance opening and closing door (2) of the chemical vapor deposition apparatus is the entrance opening and closing door. It is configured to prevent deposits from adhering to the surface of (2) and the bottom of the quartz boat (5), this invention is designed to prevent foreign matter attachment prevention cover (1) coupled to the upper part of the entrance opening and closing door (2), (1 ') Prevents deposits from adhering to the surface of the stainless steel inlet opening and closing door 2 and the surface of the quartz boat pedestal 8 so that the stainless steel inlet opening and closing door 2 and the quartz boat pedestal ( 8) It is possible to eliminate the cumbersome and troublesome work only by manually removing the deposits attached to the hand, which has the advantage of improving workability.

Description

화학기상 증착장치의 이물질 부착 방지장치Anti-fog adhesion device of chemical vapor deposition system

제1도는 종래 화학기상 증착장치의 종단면도.1 is a longitudinal sectional view of a conventional chemical vapor deposition apparatus.

제2도는 본 고안에 의한 화학기상 증착장치의 종단면도.Figure 2 is a longitudinal sectional view of the chemical vapor deposition apparatus according to the present invention.

제3도 및 제4a,b도는 이물질 부착 방지용 덮개의 평면도 및 단면도.3 and 4a, b is a plan view and a cross-sectional view of the cover for preventing foreign matter adhesion.

〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>

1,1 : 이물질 부착 방지용 덮개 2 : 입구 개폐용 문1,1: cover for preventing foreign matter attachment 2: door for opening / closing entrance

8 : 석영보트 받침대8: quartz boat pedestal

본 고안은 반도체 제조장치인 화학기상 증착장치에 관한 것으로, 특히 반응실을 구성하는 반응관의 입구문에 반응증착물이 부착되는 것을 방지하기에 적합하도록 한 화학기상 증착장치의 이물질 부착 방지장치에 관한 것이다.The present invention relates to a chemical vapor deposition apparatus which is a semiconductor manufacturing apparatus, and more particularly, to an apparatus for preventing foreign matter adhesion of a chemical vapor deposition apparatus suitable for preventing the deposition of reactants on the entrance door of a reaction tube constituting a reaction chamber. will be.

종래 화학기상 증착장치는 제1도에 도시한 바와같이, 입구 개폐용 문(2)과, 외부 석영관(3) 및 내부 석영관(4)이 구비되어 있으며, 하부 일측에 반응가스 주입구(6)가 구비됨과 아울러 타측부에 반응가스 배출구(7)가 구비되고, 상기 입구 개폐용 문(2)의 상부 석영보트 받침대(8) 위에 석영보트(5)가 결합된 구성으로 되어 있다.Conventional chemical vapor deposition apparatus, as shown in Figure 1, the entrance opening and closing door (2), the outer quartz tube 3 and the inner quartz tube (4) is provided, the reaction gas inlet 6 on the lower side In addition, the reaction gas outlet 7 is provided at the other side, and the quartz boat 5 is coupled to the upper quartz boat pedestal 8 of the inlet opening / closing door 2.

상기한 바와같은 종래의 장치는 반응가스 주입구(6)를 통해 들어간 반응가스가 반응관 내부의 고온(400~800℃ )에 의하여 열분해되어 석영보트(5)에 얹혀져 있는 웨이퍼 표면에 반응가스의 종류에 따라 실리콘 산화막, 실리콘 질화막 등의 얇은 막으로 증착되어 입혀진다. 이때 이러한 얇은 막은 웨이퍼 표면 뿐만 아니라 외부 석영관(3)의 안쪽면, 내부 석영관(4)의 안밖 양쪽면, 석영보트(5), 입구 개폐용 문(2) 및 석영보트 받침대(8) 등의 반응로 내부에 반응가스가 흘러가 닿는 부분에는 모두 입혀지며 이렇게 입혀진 막은 조직이 치밀하고 단단하므로 기계적으로 벗겨내기가 매우 힘드나, 불산(HF)등의 화공약품에는 녹는 성질이 있으므로 석영재질로 된 외부 석영관(3), 내부 석영관(4) 및 석영보트(5)등의 부품에 입혀진 경우 불산 속에 담그어 입혀진 막을 손쉽게 벗겨내게 된다.The conventional apparatus as described above is a kind of reaction gas on the surface of the wafer on which the reaction gas entered through the reaction gas inlet 6 is thermally decomposed by the high temperature (400-800 ° C.) inside the reaction tube and placed on the quartz boat 5. In accordance with this, a thin film such as a silicon oxide film or a silicon nitride film is deposited and coated. At this time, such a thin film is not only the wafer surface but also the inner surface of the outer quartz tube 3, the inner and outer sides of the inner quartz tube 4, the quartz boat 5, the entrance opening and closing door 2 and the quartz boat pedestal 8, etc. The reaction gas flows inside the reactor and is coated on the part where the reaction gas flows, and the coated film is very hard to peel off mechanically because the structure is dense and hard, but it is soluble in chemicals such as hydrofluoric acid (HF). When coated on parts such as the quartz tube 3, the internal quartz tube 4, and the quartz boat 5, the coated film is easily peeled off in hydrofluoric acid.

그리고, 스테인레스 재질로 된 입구 개폐용 문(2)과 석영보트 받침대(8)는 스테인레스가 손상되므로 그렇게 하지 못하며, 입혀진 막을 브러쉬 또는 사포 등을 이용하여 갈아내야 하는데, 작업하기가 매우 힘들고 많은 작업시간이 요구되는 결함이 있었다.In addition, the stainless steel entrance door (2) and the quartz boat pedestal (8) can not do so because the stainless steel is damaged, it is necessary to grind the coated film using a brush or sandpaper, etc. This was a required flaw.

본 고안은 상기한 바와같은 종래의 결함을 해소하기 위하여 안출한 것으로 이를 첨부한 도면에 의하여 상세히 설명하면 다음과 같다.The present invention has been devised to solve the conventional defects as described above and described in detail by the accompanying drawings as follows.

제2도는 본 고안에 의한 화학기상 증착장치의 종단면도를 보인 것이고, 제3도 및 제4도는 본 고안의 요부인 이물질 부착 방지용 덮개를 보인 도면으로서, 이에 도시한 바와같이, 입구 개폐용 문(2)과, 외부 석영관(3) 및 내부 석영관(4)이 구비되어 있으며, 하부 일측에 반응가스 주입구(6)가 구비됨과 아울러 타측부에 반응가스 배출구(7)가 구비되고, 상기 입구 개폐용 문(2)의 상부 석영보트 받침대(8) 위에 석영보트(5)가 결합되어 있다.Figure 2 shows a longitudinal cross-sectional view of the chemical vapor deposition apparatus according to the present invention, Figures 3 and 4 is a view showing a cover for preventing the adhesion of foreign matter which is the main part of the present invention, as shown in this, the entrance opening and closing door ( 2) and the outer quartz tube 3 and the inner quartz tube 4 are provided, the reaction gas inlet 6 is provided at one lower side, and the reaction gas outlet 7 is provided at the other side. The quartz boat 5 is coupled to the upper quartz boat pedestal 8 of the door 2 for opening and closing.

또, 상기 입구 개폐용 문(2)의 상부에는 본 고안에 따라 분해, 조립이 용이하도록 2개로 분리 형성된 이물질 부착 방지용 덮개(1),(1')가 결합되어 입구 개폐용 문(2)의 표면과 석영보트(5)의 하면에 증착물이 부착됨을 방지하도록 구성되어 있다.In addition, the upper part of the entrance opening and closing door (2) is coupled to the foreign matter attachment prevention cover (1), (1 ') formed in two separated to facilitate the disassembly and assembly according to the present invention of the entrance opening and closing door (2) It is configured to prevent deposits from adhering to the surface and the lower surface of the quartz boat 5.

그리고, 상기 이물질 부착 방지용 덮개(1),(1')는 순도 99.9%이상의 석영(SiO2)로 형성된다.In addition, the cover 1, 1 'for preventing foreign matter adhesion is formed of quartz (SiO 2 ) having a purity of 99.9% or more.

상기한 바와같은 본 고안은 입구 개폐용 문(2)의 상부에 결합된 이물질 부착 방지용 덮개(1),(1')가 스테인레스로 된 입구 개폐용 문(2)의 표면과 석영보트 받침대(8)의 표면에 증착물이 부착되는 것을 막아주기 때문에 종래와 같이 스테인레스재 입구 개폐용 문(2)과 석영보트 받침대(8)에 부착된 증착물을 일일이 수작업으로 제거하여야 번거롭고 까다로운 작업을 해소할 수 있어 작업성을 향상할 수 있는 이점이 있다.The present invention as described above is the surface of the entrance opening and closing door (2) and the quartz boat pedestal (8) of the foreign matter attachment prevention cover 1, (1 ') coupled to the upper portion of the entrance opening and closing door (2) made of stainless steel Because it prevents deposits from adhering to the surface of), the deposits attached to the stainless steel entrance opening / closing door (2) and the quartz boat pedestal (8) must be manually removed to eliminate the cumbersome work. There is an advantage to improve the sex.

Claims (1)

화학기상 증착장치의 입구 개폐용 문(2)의 상부에 이물질 부착 방지용 덮개(1),(1')가 결합되어 입구 개폐용 문(2)의 표면과 석영 보트(5)의 하면에 증착물이 부착됨을 방지하도록 구성된 것을 특징으로 하는 화학기상 증착장치의 이물질 부착 방지장치.The cover 1, 1 ′ for preventing foreign matter adhesion from the entrance opening door 2 of the chemical vapor deposition apparatus is combined to deposit a deposit on the surface of the entrance opening door 2 and the bottom surface of the quartz boat 5. Preventing foreign matter adhesion of the chemical vapor deposition apparatus, characterized in that configured to prevent adhesion.
KR2019940002341U 1994-02-07 1994-02-07 Device for preventing deposition of contaminants in chemical vapor deposition apparatus KR200162275Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940002341U KR200162275Y1 (en) 1994-02-07 1994-02-07 Device for preventing deposition of contaminants in chemical vapor deposition apparatus

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Application Number Priority Date Filing Date Title
KR2019940002341U KR200162275Y1 (en) 1994-02-07 1994-02-07 Device for preventing deposition of contaminants in chemical vapor deposition apparatus

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KR950025880U KR950025880U (en) 1995-09-18
KR200162275Y1 true KR200162275Y1 (en) 1999-12-15

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