JPS56152231A - Method and device for cleaning gas pipe - Google Patents

Method and device for cleaning gas pipe

Info

Publication number
JPS56152231A
JPS56152231A JP5663880A JP5663880A JPS56152231A JP S56152231 A JPS56152231 A JP S56152231A JP 5663880 A JP5663880 A JP 5663880A JP 5663880 A JP5663880 A JP 5663880A JP S56152231 A JPS56152231 A JP S56152231A
Authority
JP
Japan
Prior art keywords
pipe
gas
shut
quality
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5663880A
Other languages
Japanese (ja)
Inventor
Shigeji Kinoshita
Natsuo Tsubouchi
Wataru Wakamiya
Hiroji Harada
Sumio Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5663880A priority Critical patent/JPS56152231A/en
Publication of JPS56152231A publication Critical patent/JPS56152231A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the quality of the vapor growth by introducing halogen gas into a pipe for connecting a gas supply unit to a gas reactor with the gas supply unit side closed and cleaning it by plasma etching, thereby constantly increasing the quality of the pipe. CONSTITUTION:A gas supply unit 1 for a chemical reactor and a gas reactor 2 are connected via shut-off valves 4, 5 by a pipe 3, a vacuum exhaust unit 9 is connected via a shut-off valve 10 to the pipe and a gas plasma generator 7 made of halogen gas is connected via a shut-off valve 8 to the pipe. Then, plasma gas is introduced into the pipe 3 with the shut-off valve 4 closed, and solid matter and contaminant are cleaned by etching in the pipe. Since the quality of the pipe can constantly be increased, the quality of the vapor growth can be increased, and the expenses in repairing the device can be saved.
JP5663880A 1980-04-25 1980-04-25 Method and device for cleaning gas pipe Pending JPS56152231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5663880A JPS56152231A (en) 1980-04-25 1980-04-25 Method and device for cleaning gas pipe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5663880A JPS56152231A (en) 1980-04-25 1980-04-25 Method and device for cleaning gas pipe

Publications (1)

Publication Number Publication Date
JPS56152231A true JPS56152231A (en) 1981-11-25

Family

ID=13032866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5663880A Pending JPS56152231A (en) 1980-04-25 1980-04-25 Method and device for cleaning gas pipe

Country Status (1)

Country Link
JP (1) JPS56152231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758044A (en) * 1994-04-25 1995-03-03 Hitachi Ltd Vacuum processing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
JPS5396758A (en) * 1977-02-04 1978-08-24 Mitsubishi Electric Corp Vapor phase growth apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
JPS5396758A (en) * 1977-02-04 1978-08-24 Mitsubishi Electric Corp Vapor phase growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758044A (en) * 1994-04-25 1995-03-03 Hitachi Ltd Vacuum processing method

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