JPS6430225A - Plasma processor - Google Patents
Plasma processorInfo
- Publication number
- JPS6430225A JPS6430225A JP18544787A JP18544787A JPS6430225A JP S6430225 A JPS6430225 A JP S6430225A JP 18544787 A JP18544787 A JP 18544787A JP 18544787 A JP18544787 A JP 18544787A JP S6430225 A JPS6430225 A JP S6430225A
- Authority
- JP
- Japan
- Prior art keywords
- steam
- oxygen
- feeder means
- pipe
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable steam to be fed at low pressure in parallel with gasses fed at high pressure by a method wherein multiple pipes comprising gas feeder means respectively and directly opening into a plasma producing chamber are respectively and independently actuated without interfering with each other. CONSTITUTION:Multiple pipes 122 comprise gas feeder means 12; one pipe feeds oxygen and nitrogen or dinitrogen oxide; the other pipe feeds steam; and both pipes open into a plasma producing chamber 1. Furthermore, mass flows 121 as flow rate controllers are provided in respective pipes 122 comprising the gas feeder means 12; one pipe is provided with an oxygen source, nitrogen source, etc., in the upstream; the other pipe is provided with steam source 124 through the intermediary of a needle valve 123. When steam is added to a reactive gas in case down flow ashing process using oxygen gas is performed, the ashing rate is increased, however, oxygen and nitrogen or dinitrogen oxide as well as steam are smoothly and directly fed to the plasma producing chamber 1 by gas feeder means 12 to show the excellent ashing rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18544787A JPH0748489B2 (en) | 1987-07-27 | 1987-07-27 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18544787A JPH0748489B2 (en) | 1987-07-27 | 1987-07-27 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430225A true JPS6430225A (en) | 1989-02-01 |
| JPH0748489B2 JPH0748489B2 (en) | 1995-05-24 |
Family
ID=16170954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18544787A Expired - Lifetime JPH0748489B2 (en) | 1987-07-27 | 1987-07-27 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748489B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992000601A1 (en) * | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
| WO1992006488A1 (en) * | 1990-10-05 | 1992-04-16 | Fujitsu Limited | Vapor supplier and its control method |
| JP2510053B2 (en) * | 1990-06-27 | 1996-06-26 | 富士通株式会社 | Method of manufacturing semiconductor integrated circuit and manufacturing apparatus used therefor |
| JP2008028326A (en) * | 2006-07-25 | 2008-02-07 | Tokyo Electron Ltd | Gas supply system, gas supply method, method of cleaning thin-film forming apparatus, method of forming thin film, and thin-film forming apparatus |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP7190450B2 (en) | 2017-06-02 | 2022-12-15 | アプライド マテリアルズ インコーポレイテッド | Dry stripping of boron carbide hardmask |
| CN111095513B (en) | 2017-08-18 | 2023-10-31 | 应用材料公司 | High-pressure high-temperature annealing chamber |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN111095524B (en) | 2017-09-12 | 2023-10-03 | 应用材料公司 | Apparatus and method for fabricating semiconductor structures using protective barrier layers |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| CN117936417A (en) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | Gas delivery system for high pressure processing chamber |
| SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
| WO2019099255A2 (en) | 2017-11-17 | 2019-05-23 | Applied Materials, Inc. | Condenser system for high pressure processing system |
| CN111699549A (en) | 2018-01-24 | 2020-09-22 | 应用材料公司 | Seam closure using high pressure annealing |
| WO2019173006A1 (en) | 2018-03-09 | 2019-09-12 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP7179172B6 (en) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | Method for etching structures for semiconductor applications |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
-
1987
- 1987-07-27 JP JP18544787A patent/JPH0748489B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992000601A1 (en) * | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
| US5397432A (en) * | 1990-06-27 | 1995-03-14 | Fujitsu Limited | Method for producing semiconductor integrated circuits and apparatus used in such method |
| JP2510053B2 (en) * | 1990-06-27 | 1996-06-26 | 富士通株式会社 | Method of manufacturing semiconductor integrated circuit and manufacturing apparatus used therefor |
| WO1992006488A1 (en) * | 1990-10-05 | 1992-04-16 | Fujitsu Limited | Vapor supplier and its control method |
| JP2008028326A (en) * | 2006-07-25 | 2008-02-07 | Tokyo Electron Ltd | Gas supply system, gas supply method, method of cleaning thin-film forming apparatus, method of forming thin film, and thin-film forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0748489B2 (en) | 1995-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080524 Year of fee payment: 13 |