JPS5290269A - Forming method for fine resist patterns - Google Patents

Forming method for fine resist patterns

Info

Publication number
JPS5290269A
JPS5290269A JP582776A JP582776A JPS5290269A JP S5290269 A JPS5290269 A JP S5290269A JP 582776 A JP582776 A JP 582776A JP 582776 A JP582776 A JP 582776A JP S5290269 A JPS5290269 A JP S5290269A
Authority
JP
Japan
Prior art keywords
resist patterns
forming method
fine resist
fine
halogenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP582776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5524088B2 (en:Method
Inventor
Masami Kakuchi
Shungo Sugawara
Hiroshi Murase
Gentarou Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP582776A priority Critical patent/JPS5290269A/ja
Priority to GB1977/77A priority patent/GB1511992A/en
Priority to US05/760,374 priority patent/US4125672A/en
Priority to NL7700552A priority patent/NL7700552A/xx
Priority to FR7701778A priority patent/FR2339184A1/fr
Priority to DE2702427A priority patent/DE2702427C3/de
Priority to CA270,235A priority patent/CA1092410A/en
Publication of JPS5290269A publication Critical patent/JPS5290269A/ja
Publication of JPS5524088B2 publication Critical patent/JPS5524088B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP582776A 1976-01-23 1976-01-23 Forming method for fine resist patterns Granted JPS5290269A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP582776A JPS5290269A (en) 1976-01-23 1976-01-23 Forming method for fine resist patterns
GB1977/77A GB1511992A (en) 1976-01-23 1977-01-18 Method of forming a resist image
US05/760,374 US4125672A (en) 1976-01-23 1977-01-19 Polymeric resist mask composition
NL7700552A NL7700552A (nl) 1976-01-23 1977-01-20 Werkwijze voor het vervaardigen van een bescher- mend masker uit een polymeersamenstelling ten be- hoeve van een halfgeleider en de aldus vervaar- digde voorwerpen.
FR7701778A FR2339184A1 (fr) 1976-01-23 1977-01-21 Composition polymere pour masques photoresists
DE2702427A DE2702427C3 (de) 1976-01-23 1977-01-21 Strahlungsempfindliche Lackmaskenmasse und Verfahren zu ihrer Verwendung
CA270,235A CA1092410A (en) 1976-01-23 1977-01-21 Polymeric resist mask composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP582776A JPS5290269A (en) 1976-01-23 1976-01-23 Forming method for fine resist patterns

Publications (2)

Publication Number Publication Date
JPS5290269A true JPS5290269A (en) 1977-07-29
JPS5524088B2 JPS5524088B2 (en:Method) 1980-06-26

Family

ID=11621877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP582776A Granted JPS5290269A (en) 1976-01-23 1976-01-23 Forming method for fine resist patterns

Country Status (7)

Country Link
US (1) US4125672A (en:Method)
JP (1) JPS5290269A (en:Method)
CA (1) CA1092410A (en:Method)
DE (1) DE2702427C3 (en:Method)
FR (1) FR2339184A1 (en:Method)
GB (1) GB1511992A (en:Method)
NL (1) NL7700552A (en:Method)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149116A (en) * 1976-06-07 1977-12-12 Tokyo Ouka Kougiyou Kk Method of forming xxray image
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
JPS53135703A (en) * 1977-04-26 1978-11-27 Int Standard Electric Corp Resist material for printing xxray lithographic plate
JPS54115128A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Positive resist sensitive to electromagnetic radiation
JPS54145127A (en) * 1978-05-04 1979-11-13 Nippon Telegr & Teleph Corp <Ntt> Pattern formation material
JPS5515149A (en) * 1978-07-20 1980-02-02 Oki Electric Ind Co Ltd Forming method of resist for microfabrication
JPS5517112A (en) * 1978-07-21 1980-02-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Positive type radiation sensitive composition
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPS5860536A (ja) * 1981-10-06 1983-04-11 Toshiba Corp レジスト像形成方法
JPS59180546A (ja) * 1983-03-30 1984-10-13 Daikin Ind Ltd レジスト被膜の現像方法
JPS6170719A (ja) * 1984-09-14 1986-04-11 Matsushita Electronics Corp パタ−ン形成方法
WO2017170828A1 (ja) * 2016-03-31 2017-10-05 日産化学工業株式会社 硬化膜形成組成物
JP2017537970A (ja) * 2014-12-19 2017-12-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ フッ素化合物
JPWO2017170828A1 (ja) * 2016-03-31 2019-02-14 日産化学株式会社 硬化膜形成組成物

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5484978A (en) * 1977-12-20 1979-07-06 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
US4225664A (en) * 1979-02-22 1980-09-30 Bell Telephone Laboratories, Incorporated X-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate)
DE3060510D1 (en) * 1979-03-09 1982-07-29 Thomson Csf Photomasking substances, process for preparing them and mask obtained
FR2451050A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
FR2461967A2 (fr) * 1979-07-17 1981-02-06 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
JPS56139515A (en) * 1980-03-31 1981-10-31 Daikin Ind Ltd Polyfluoroalkyl acrylate copolymer
JPS56167139A (en) 1980-05-27 1981-12-22 Daikin Ind Ltd Sensitive material
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
JPS584137A (ja) * 1981-06-30 1983-01-11 Daikin Ind Ltd レジストおよび微細レジストパタ−ンの形成方法
CA1207099A (en) * 1981-12-19 1986-07-02 Tsuneo Fujii Resist material and process for forming fine resist pattern
DE3246825A1 (de) * 1982-02-24 1983-09-01 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Positives resistmaterial
US5378502A (en) * 1992-09-09 1995-01-03 U.S. Philips Corporation Method of chemically modifying a surface in accordance with a pattern
DE69428821T2 (de) * 1993-03-25 2002-04-11 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske
WO2002102758A1 (en) * 2001-06-18 2002-12-27 Honeywell International, Inc. Fluorine-containing compounds and polymers derived therefrom
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
EP1983038A1 (en) * 2007-04-18 2008-10-22 Turboden S.r.l. Turbo generator (orc) for applications at middle-low temperatures, using a fluid with azeotropic behaviour

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3632400A (en) * 1969-06-30 1972-01-04 Ford Motor Co Surface modified elastomers
US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process
JPS5342260B2 (en:Method) * 1973-11-22 1978-11-10
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149116A (en) * 1976-06-07 1977-12-12 Tokyo Ouka Kougiyou Kk Method of forming xxray image
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
JPS53135703A (en) * 1977-04-26 1978-11-27 Int Standard Electric Corp Resist material for printing xxray lithographic plate
JPS54115128A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Positive resist sensitive to electromagnetic radiation
JPS54145127A (en) * 1978-05-04 1979-11-13 Nippon Telegr & Teleph Corp <Ntt> Pattern formation material
JPS5515149A (en) * 1978-07-20 1980-02-02 Oki Electric Ind Co Ltd Forming method of resist for microfabrication
JPS5517112A (en) * 1978-07-21 1980-02-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Positive type radiation sensitive composition
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPS5860536A (ja) * 1981-10-06 1983-04-11 Toshiba Corp レジスト像形成方法
JPS59180546A (ja) * 1983-03-30 1984-10-13 Daikin Ind Ltd レジスト被膜の現像方法
JPS6170719A (ja) * 1984-09-14 1986-04-11 Matsushita Electronics Corp パタ−ン形成方法
JP2017537970A (ja) * 2014-12-19 2017-12-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ フッ素化合物
WO2017170828A1 (ja) * 2016-03-31 2017-10-05 日産化学工業株式会社 硬化膜形成組成物
JPWO2017170828A1 (ja) * 2016-03-31 2019-02-14 日産化学株式会社 硬化膜形成組成物
US10669376B2 (en) 2016-03-31 2020-06-02 Nissan Chemical Corporation Cured film-forming composition

Also Published As

Publication number Publication date
GB1511992A (en) 1978-05-24
FR2339184B1 (en:Method) 1980-12-26
DE2702427A1 (de) 1977-08-04
FR2339184A1 (fr) 1977-08-19
DE2702427C3 (de) 1979-10-18
DE2702427B2 (de) 1979-02-15
CA1092410A (en) 1980-12-30
JPS5524088B2 (en:Method) 1980-06-26
NL7700552A (nl) 1977-07-26
US4125672A (en) 1978-11-14

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