JPS53135703A - Resist material for printing xxray lithographic plate - Google Patents

Resist material for printing xxray lithographic plate

Info

Publication number
JPS53135703A
JPS53135703A JP4797378A JP4797378A JPS53135703A JP S53135703 A JPS53135703 A JP S53135703A JP 4797378 A JP4797378 A JP 4797378A JP 4797378 A JP4797378 A JP 4797378A JP S53135703 A JPS53135703 A JP S53135703A
Authority
JP
Japan
Prior art keywords
xxray
printing
resist material
lithographic plate
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4797378A
Other languages
Japanese (ja)
Other versions
JPS5721698B2 (en
Inventor
Oogasuto Haabaato Hai Hadorufu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of JPS53135703A publication Critical patent/JPS53135703A/en
Publication of JPS5721698B2 publication Critical patent/JPS5721698B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
JP4797378A 1977-04-26 1978-04-24 Resist material for printing xxray lithographic plate Granted JPS53135703A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1730877A GB1602724A (en) 1977-04-26 1977-04-26 Resist material for x-ray lithography

Publications (2)

Publication Number Publication Date
JPS53135703A true JPS53135703A (en) 1978-11-27
JPS5721698B2 JPS5721698B2 (en) 1982-05-08

Family

ID=10092910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4797378A Granted JPS53135703A (en) 1977-04-26 1978-04-24 Resist material for printing xxray lithographic plate

Country Status (4)

Country Link
JP (1) JPS53135703A (en)
DE (1) DE2817426A1 (en)
FR (1) FR2389156A1 (en)
GB (1) GB1602724A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461967A2 (en) * 1979-07-17 1981-02-06 Thomson Csf Positive photoresist compsn. - comprises halogen substituted alkyl acrylic! polymers, for prodn. of integrated circuits and optics
EP0016679B1 (en) * 1979-03-09 1982-06-09 Thomson-Csf Photomasking substances, process for preparing them and mask obtained
FR2451050A1 (en) * 1979-03-09 1980-10-03 Thomson Csf Positive photoresist compsn. - comprises halogen substituted alkyl acrylic! polymers, for prodn. of integrated circuits and optics
DE3153069T1 (en) * 1981-12-21 1983-12-15 Institut chimii Akademii Nauk SSSR, Gor'kij PHOTO AND ELECTRON RESIST
JP2002110505A (en) * 2000-09-27 2002-04-12 Mitsubishi Electric Corp Method and device of exposure, x-ray mask, resist, semiconductor and fine structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5376825A (en) * 1976-12-20 1978-07-07 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive positive regist material
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
JPS53102025A (en) * 1977-02-18 1978-09-06 Hitachi Ltd Radiation sensitive organic high molecular material
JPS53116831A (en) * 1977-03-23 1978-10-12 Toshiba Corp Radioactive-ray sensitive material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5376825A (en) * 1976-12-20 1978-07-07 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive positive regist material
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
JPS53102025A (en) * 1977-02-18 1978-09-06 Hitachi Ltd Radiation sensitive organic high molecular material
JPS53116831A (en) * 1977-03-23 1978-10-12 Toshiba Corp Radioactive-ray sensitive material

Also Published As

Publication number Publication date
JPS5721698B2 (en) 1982-05-08
GB1602724A (en) 1981-11-18
FR2389156A1 (en) 1978-11-24
FR2389156B1 (en) 1983-08-26
DE2817426A1 (en) 1978-11-02

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