JPS57196232A - High sensitive and positive type resist - Google Patents

High sensitive and positive type resist

Info

Publication number
JPS57196232A
JPS57196232A JP8075281A JP8075281A JPS57196232A JP S57196232 A JPS57196232 A JP S57196232A JP 8075281 A JP8075281 A JP 8075281A JP 8075281 A JP8075281 A JP 8075281A JP S57196232 A JPS57196232 A JP S57196232A
Authority
JP
Japan
Prior art keywords
fluoride
resist
polymer
solvent
alcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8075281A
Other languages
Japanese (ja)
Inventor
Masami Kakuchi
Shungo Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8075281A priority Critical patent/JPS57196232A/en
Publication of JPS57196232A publication Critical patent/JPS57196232A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

PURPOSE:To obtain a titled resist having high sensitivity, high resolution and good heat resisting shape retention, by incorporating a specific methacylic acid tertiary alkylester fluoride polymer. CONSTITUTION:By polymerizing tertiary alkylester fluoride obtained by reacting alcohol fluoride and methacrylic acid or its reacting derivative, 1million-15million weight average mol.wt. methacylic acid tertiary alkylester fluoride polymer (formulaI) is obtained. A resist solution in which the polymer is dissolved in a solvent such as aliphatic ketone and alcohol, etc. is applied on a supporting material to form a resist layer, and after the layer is irradiated with high energy beam to form a desired pattern, it is developed by using a solvent such as methyl isobutyl ketone, etc. By this way, a semiconductor element and a magnetic bubble element, etc. having <=1mum fine pattern are obtained.
JP8075281A 1981-05-29 1981-05-29 High sensitive and positive type resist Pending JPS57196232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8075281A JPS57196232A (en) 1981-05-29 1981-05-29 High sensitive and positive type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8075281A JPS57196232A (en) 1981-05-29 1981-05-29 High sensitive and positive type resist

Publications (1)

Publication Number Publication Date
JPS57196232A true JPS57196232A (en) 1982-12-02

Family

ID=13727131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8075281A Pending JPS57196232A (en) 1981-05-29 1981-05-29 High sensitive and positive type resist

Country Status (1)

Country Link
JP (1) JPS57196232A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302726A (en) * 2000-02-16 2001-10-31 Shin Etsu Chem Co Ltd Polymeric compound, resist material and pattern-forming method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5524088A (en) * 1979-03-02 1980-02-20 Daiichi Koki Folding thick bedquilt drying tool
JPS5653114A (en) * 1979-10-08 1981-05-12 Kohjin Co Ltd Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
JPS5654434A (en) * 1979-10-11 1981-05-14 Kohjin Co Ltd Radiation and far ultraviolet ray sensitive positive type resist method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5524088A (en) * 1979-03-02 1980-02-20 Daiichi Koki Folding thick bedquilt drying tool
JPS5653114A (en) * 1979-10-08 1981-05-12 Kohjin Co Ltd Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
JPS5654434A (en) * 1979-10-11 1981-05-14 Kohjin Co Ltd Radiation and far ultraviolet ray sensitive positive type resist method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302726A (en) * 2000-02-16 2001-10-31 Shin Etsu Chem Co Ltd Polymeric compound, resist material and pattern-forming method

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