JPH11243208A5 - - Google Patents

Info

Publication number
JPH11243208A5
JPH11243208A5 JP1998045459A JP4545998A JPH11243208A5 JP H11243208 A5 JPH11243208 A5 JP H11243208A5 JP 1998045459 A JP1998045459 A JP 1998045459A JP 4545998 A JP4545998 A JP 4545998A JP H11243208 A5 JPH11243208 A5 JP H11243208A5
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
semiconductor substrate
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998045459A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11243208A (ja
Filing date
Publication date
Priority claimed from JP10045459A external-priority patent/JPH11243208A/ja
Priority to JP10045459A priority Critical patent/JPH11243208A/ja
Application filed filed Critical
Priority to TW087112003A priority patent/TW382817B/zh
Priority to US09/122,863 priority patent/US6459125B2/en
Priority to DE19842441A priority patent/DE19842441B4/de
Priority to FR9811927A priority patent/FR2775387B1/fr
Priority to KR1019980044987A priority patent/KR19990071421A/ko
Publication of JPH11243208A publication Critical patent/JPH11243208A/ja
Priority to KR10-2001-0004231A priority patent/KR100377893B1/ko
Priority to US10/122,322 priority patent/US20020110954A1/en
Publication of JPH11243208A5 publication Critical patent/JPH11243208A5/ja
Pending legal-status Critical Current

Links

JP10045459A 1998-02-26 1998-02-26 半導体装置及びその製造方法 Pending JPH11243208A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP10045459A JPH11243208A (ja) 1998-02-26 1998-02-26 半導体装置及びその製造方法
TW087112003A TW382817B (en) 1998-02-26 1998-07-23 Semiconductor device and method of fabricating same
US09/122,863 US6459125B2 (en) 1998-02-26 1998-07-27 SOI based transistor inside an insulation layer with conductive bump on the insulation layer
DE19842441A DE19842441B4 (de) 1998-02-26 1998-09-16 Halbleiterbauelement und Verfahren zu seiner Herstellung
FR9811927A FR2775387B1 (fr) 1998-02-26 1998-09-24 Dispositif a semiconducteur ayant une structure soi et procede de fabrication
KR1019980044987A KR19990071421A (ko) 1998-02-26 1998-10-27 반도체 장치 및 그 제조 방법
KR10-2001-0004231A KR100377893B1 (ko) 1998-02-26 2001-01-30 반도체 장치 및 그 제조 방법
US10/122,322 US20020110954A1 (en) 1998-02-26 2002-04-16 Semiconductor device and method of fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045459A JPH11243208A (ja) 1998-02-26 1998-02-26 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11243208A JPH11243208A (ja) 1999-09-07
JPH11243208A5 true JPH11243208A5 (enExample) 2005-09-02

Family

ID=12719953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045459A Pending JPH11243208A (ja) 1998-02-26 1998-02-26 半導体装置及びその製造方法

Country Status (6)

Country Link
US (2) US6459125B2 (enExample)
JP (1) JPH11243208A (enExample)
KR (2) KR19990071421A (enExample)
DE (1) DE19842441B4 (enExample)
FR (1) FR2775387B1 (enExample)
TW (1) TW382817B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3824845B2 (ja) * 2000-06-21 2006-09-20 セイコーエプソン株式会社 Ｌｃｄドライバｉｃチップ
JP2002270611A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2003045958A (ja) * 2001-07-27 2003-02-14 Denso Corp 半導体装置及びその製造方法
US6762503B2 (en) * 2002-08-29 2004-07-13 Micron Technology, Inc. Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same
US6841874B1 (en) 2002-11-01 2005-01-11 Amkor Technology, Inc. Wafer-level chip-scale package
DE10308275A1 (de) 2003-02-26 2004-09-16 Advanced Micro Devices, Inc., Sunnyvale Strahlungsresistentes Halbleiterbauteil
JP2008543604A (ja) * 2005-06-15 2008-12-04 エヌエックスピー ビー ヴィ 積層体ならびにその使用方法および製造方法
US7736915B2 (en) * 2006-02-21 2010-06-15 International Business Machines Corporation Method for neutralizing trapped charge in a charge accumulation layer of a semiconductor structure
WO2009027888A2 (en) * 2007-08-24 2009-03-05 Nxp B.V. Solderable structure
JP2009064812A (ja) * 2007-09-04 2009-03-26 Panasonic Corp 半導体装置の電極構造およびその関連技術
US8809182B2 (en) 2008-05-01 2014-08-19 International Business Machines Corporation Pad cushion structure and method of fabrication for Pb-free C4 integrated circuit chip joining
KR101936039B1 (ko) 2012-10-30 2019-01-08 삼성전자 주식회사 반도체 장치
US10163828B2 (en) * 2013-11-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and fabricating method thereof
JP6416800B2 (ja) * 2016-01-26 2018-10-31 株式会社東芝 半導体装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110734A (ja) 1986-10-29 1988-05-16 Hitachi Ltd 集積回路素子
JPS63229726A (ja) 1987-03-18 1988-09-26 Nec Corp 混成集積回路装置
JPS63262867A (ja) 1987-04-20 1988-10-31 Nec Corp 半導体記憶装置
US5024965A (en) 1990-02-16 1991-06-18 Chang Chen Chi P Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
JPH03272176A (ja) 1990-03-22 1991-12-03 Fujitsu Ltd 半導体装置と基板と基板製造方法
KR100292330B1 (ko) * 1992-05-01 2001-09-17 이데이 노부유끼 반도체장치와그제조방법및실리콘절연기판의제조방법
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3321899B2 (ja) * 1992-12-04 2002-09-09 株式会社デンソー 半導体装置
US5426072A (en) 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
JP3269536B2 (ja) 1993-02-19 2002-03-25 株式会社デンソー 半導体装置
US5329423A (en) * 1993-04-13 1994-07-12 Scholz Kenneth D Compressive bump-and-socket interconnection scheme for integrated circuits
US5492863A (en) * 1994-10-19 1996-02-20 Motorola, Inc. Method for forming conductive bumps on a semiconductor device
JPH08139296A (ja) 1994-11-08 1996-05-31 Hitachi Ltd 半導体基板およびそれを用いた半導体集積回路装置
JP3272176B2 (ja) 1994-12-20 2002-04-08 東芝テック株式会社 商品販売登録データ処理装置
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JPH0951083A (ja) 1995-08-10 1997-02-18 Mitsubishi Electric Corp ゲートアレイ型半導体集積回路装置及びその製造方法
US5670812A (en) * 1995-09-29 1997-09-23 International Business Machines Corporation Field effect transistor having contact layer of transistor gate electrode material
JP2748955B2 (ja) 1996-03-21 1998-05-13 株式会社日立製作所 半導体装置
JP2861965B2 (ja) * 1996-09-20 1999-02-24 日本電気株式会社 突起電極の形成方法
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
JPH10294318A (ja) * 1997-04-18 1998-11-04 Toshiba Corp 電子部品
JP3641111B2 (ja) * 1997-08-28 2005-04-20 株式会社ルネサステクノロジ 半導体装置の製造方法
TW434646B (en) * 1997-11-21 2001-05-16 Rohm Co Ltd Semiconductor device and method for making the same
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3546783B2 (ja) * 1999-06-09 2004-07-28 セイコーエプソン株式会社 半導体記憶装置及びその製造方法

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