JPH11145420A5 - - Google Patents

Info

Publication number
JPH11145420A5
JPH11145420A5 JP1997305830A JP30583097A JPH11145420A5 JP H11145420 A5 JPH11145420 A5 JP H11145420A5 JP 1997305830 A JP1997305830 A JP 1997305830A JP 30583097 A JP30583097 A JP 30583097A JP H11145420 A5 JPH11145420 A5 JP H11145420A5
Authority
JP
Japan
Prior art keywords
memory device
control circuit
central region
regions
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1997305830A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11145420A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9305830A priority Critical patent/JPH11145420A/ja
Priority claimed from JP9305830A external-priority patent/JPH11145420A/ja
Priority to US09/059,202 priority patent/US5966316A/en
Publication of JPH11145420A publication Critical patent/JPH11145420A/ja
Publication of JPH11145420A5 publication Critical patent/JPH11145420A5/ja
Withdrawn legal-status Critical Current

Links

JP9305830A 1997-11-07 1997-11-07 半導体記憶装置 Withdrawn JPH11145420A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9305830A JPH11145420A (ja) 1997-11-07 1997-11-07 半導体記憶装置
US09/059,202 US5966316A (en) 1997-11-07 1998-04-14 Semiconductor memory device having storage capacity of 22N+1 bits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9305830A JPH11145420A (ja) 1997-11-07 1997-11-07 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007159108A Division JP2007306012A (ja) 2007-06-15 2007-06-15 ダイナミックランダムアクセスメモリおよび半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH11145420A JPH11145420A (ja) 1999-05-28
JPH11145420A5 true JPH11145420A5 (https=) 2005-06-30

Family

ID=17949894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9305830A Withdrawn JPH11145420A (ja) 1997-11-07 1997-11-07 半導体記憶装置

Country Status (2)

Country Link
US (1) US5966316A (https=)
JP (1) JPH11145420A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104686B2 (ja) * 1998-08-25 2000-10-30 日本電気株式会社 集積回路装置
KR100302597B1 (ko) * 1998-12-04 2001-09-22 김영환 반도체메모리구조
DE10055001A1 (de) * 2000-11-07 2002-05-16 Infineon Technologies Ag Speicheranordnung mit einem zentralen Anschlussfeld
JP4989821B2 (ja) 2001-02-06 2012-08-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2002237188A (ja) * 2001-02-13 2002-08-23 Mitsubishi Electric Corp 半導体記憶装置
CN100580801C (zh) * 2002-04-10 2010-01-13 海力士半导体有限公司 具有非矩形存储条的存储芯片结构以及用于布置存储条的方法
KR100437468B1 (ko) 2002-07-26 2004-06-23 삼성전자주식회사 9의 배수가 되는 데이터 입출력 구조를 반도체 메모리 장치
US6962399B2 (en) * 2002-12-30 2005-11-08 Lexmark International, Inc. Method of warning a user of end of life of a consumable for an ink jet printer
JP2007200963A (ja) 2006-01-24 2007-08-09 Hitachi Ltd 半導体記憶装置
JP4693656B2 (ja) * 2006-03-06 2011-06-01 株式会社東芝 不揮発性半導体記憶装置
US8120989B2 (en) * 2007-06-25 2012-02-21 Qualcomm Incorporated Concurrent multiple-dimension word-addressable memory architecture
US7990798B2 (en) * 2007-10-15 2011-08-02 Qimonda Ag Integrated circuit including a memory module having a plurality of memory banks
JP2009295740A (ja) * 2008-06-04 2009-12-17 Elpida Memory Inc メモリチップ及び半導体装置
US8098540B2 (en) * 2008-06-27 2012-01-17 Qualcomm Incorporated Dynamic power saving memory architecture
TW201530726A (zh) * 2014-01-29 2015-08-01 Eorex Corp 記憶體與記憶體儲存裝置
KR102219296B1 (ko) * 2014-08-14 2021-02-23 삼성전자 주식회사 반도체 패키지

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242101B2 (ja) * 1990-10-05 2001-12-25 三菱電機株式会社 半導体集積回路
JP2996324B2 (ja) * 1992-08-28 1999-12-27 日本電気株式会社 半導体集積回路装置
KR0137105B1 (ko) * 1993-06-17 1998-04-29 모리시다 요이치 데이터 전송회로, 데이터선 구동회로, 증폭회로, 반도체 집적회로 및 반도체 기억장치
JP3577148B2 (ja) * 1995-11-28 2004-10-13 株式会社ルネサステクノロジ 半導体記憶装置
KR0172426B1 (ko) * 1995-12-21 1999-03-30 김광호 반도체 메모리장치

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