JPH10303289A5 - - Google Patents

Info

Publication number
JPH10303289A5
JPH10303289A5 JP1997112467A JP11246797A JPH10303289A5 JP H10303289 A5 JPH10303289 A5 JP H10303289A5 JP 1997112467 A JP1997112467 A JP 1997112467A JP 11246797 A JP11246797 A JP 11246797A JP H10303289 A5 JPH10303289 A5 JP H10303289A5
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
trench
semiconductor substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997112467A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303289A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9112467A priority Critical patent/JPH10303289A/ja
Priority claimed from JP9112467A external-priority patent/JPH10303289A/ja
Priority to TW087102181A priority patent/TW388100B/zh
Priority to CNB021571880A priority patent/CN1284224C/zh
Priority to CN98802666A priority patent/CN1112727C/zh
Priority to PCT/JP1998/000671 priority patent/WO1998036452A1/en
Priority to US09/367,524 priority patent/US6242323B1/en
Priority to CNB031306020A priority patent/CN100521146C/zh
Priority to US09/066,757 priority patent/US6057241A/en
Priority to KR1019980015280A priority patent/KR19980081825A/ko
Priority to TW087106611A priority patent/TW418492B/zh
Priority to MYPI98000689A priority patent/MY121321A/en
Publication of JPH10303289A publication Critical patent/JPH10303289A/ja
Priority to KR1019997007482A priority patent/KR100307000B1/ko
Priority to US09/845,338 priority patent/US6559027B2/en
Priority to US10/392,916 priority patent/US6881646B2/en
Publication of JPH10303289A5 publication Critical patent/JPH10303289A5/ja
Priority to US11/108,827 priority patent/US7402473B2/en
Pending legal-status Critical Current

Links

JP9112467A 1997-02-18 1997-04-30 半導体集積回路装置の製造方法 Pending JPH10303289A (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP9112467A JPH10303289A (ja) 1997-04-30 1997-04-30 半導体集積回路装置の製造方法
TW087102181A TW388100B (en) 1997-02-18 1998-02-17 Semiconductor deivce and process for producing the same
CNB021571880A CN1284224C (zh) 1997-02-18 1998-02-18 半导体器件及其制造工艺
CN98802666A CN1112727C (zh) 1997-02-18 1998-02-18 半导体器件及其制造工艺
PCT/JP1998/000671 WO1998036452A1 (en) 1997-02-18 1998-02-18 Semiconductor device and process for producing the same
US09/367,524 US6242323B1 (en) 1997-02-18 1998-02-18 Semiconductor device and process for producing the same
CNB031306020A CN100521146C (zh) 1997-02-18 1998-02-18 半导体器件的制造工艺
US09/066,757 US6057241A (en) 1997-04-30 1998-04-27 Method of manufacturing a semiconductor integrated circuit device
TW087106611A TW418492B (en) 1997-04-30 1998-04-29 Method of manufacturing a semiconductor integrated circuit device
KR1019980015280A KR19980081825A (ko) 1997-04-30 1998-04-29 반도체 집적회로장치의 제조방법
MYPI98000689A MY121321A (en) 1997-02-18 1998-08-11 Semiconductor device and process for producing the same
KR1019997007482A KR100307000B1 (ko) 1997-02-18 1999-08-18 반도체 장치 및 그 제조 공정
US09/845,338 US6559027B2 (en) 1997-02-18 2001-05-01 Semiconductor device and process for producing the sme
US10/392,916 US6881646B2 (en) 1997-02-18 2003-03-21 Semiconductor device and process for producing the same
US11/108,827 US7402473B2 (en) 1997-02-18 2005-04-19 Semiconductor device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9112467A JPH10303289A (ja) 1997-04-30 1997-04-30 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPH10303289A JPH10303289A (ja) 1998-11-13
JPH10303289A5 true JPH10303289A5 (enExample) 2005-02-10

Family

ID=14587379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9112467A Pending JPH10303289A (ja) 1997-02-18 1997-04-30 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (1) US6057241A (enExample)
JP (1) JPH10303289A (enExample)
KR (1) KR19980081825A (enExample)
TW (1) TW418492B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592837B2 (ja) * 1998-07-31 2010-12-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2000082808A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置及びその製造方法
US6599812B1 (en) * 1998-10-23 2003-07-29 Stmicroelectronics S.R.L. Manufacturing method for a thick oxide layer
JP3571236B2 (ja) * 1998-11-09 2004-09-29 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3955404B2 (ja) * 1998-12-28 2007-08-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4012350B2 (ja) * 1999-10-06 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
KR100345400B1 (ko) * 1999-10-08 2002-07-26 한국전자통신연구원 가장자리에 두꺼운 산화막을 갖는 트렌치 형성방법
JP2001144170A (ja) * 1999-11-11 2001-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001332613A (ja) * 2000-05-24 2001-11-30 Nec Corp 半導体装置の製造方法
JP2001345375A (ja) * 2000-05-31 2001-12-14 Miyazaki Oki Electric Co Ltd 半導体装置および半導体装置の製造方法
US6406976B1 (en) * 2000-09-18 2002-06-18 Motorola, Inc. Semiconductor device and process for forming the same
JP4285899B2 (ja) 2000-10-10 2009-06-24 三菱電機株式会社 溝を有する半導体装置
US6451704B1 (en) * 2001-05-07 2002-09-17 Chartered Semiconductor Manufacturing Ltd. Method for forming PLDD structure with minimized lateral dopant diffusion
ITTO20011038A1 (it) * 2001-10-30 2003-04-30 St Microelectronics Srl Procedimento per la fabbricazione di una fetta semiconduttrice integrante dispositivi elettronici e una struttura per il disaccoppiamento el
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
DE10259728B4 (de) * 2002-12-19 2008-01-17 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Grabenisolationsstruktur und Verfahren zum Steuern eines Grades an Kantenrundung einer Grabenisolationsstruktur in einem Halbleiterbauelement
JP2003249546A (ja) * 2003-01-06 2003-09-05 Seiko Epson Corp 半導体ウエハおよびその処理方法ならびに半導体装置の製造方法
JP2005347636A (ja) * 2004-06-04 2005-12-15 Az Electronic Materials Kk トレンチ・アイソレーション構造の形成方法
JP2006332404A (ja) * 2005-05-27 2006-12-07 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
KR100698085B1 (ko) * 2005-12-29 2007-03-23 동부일렉트로닉스 주식회사 트랜치 형성방법
JP2009283492A (ja) * 2008-05-19 2009-12-03 Seiko Epson Corp 半導体装置の製造方法
JP2009283493A (ja) * 2008-05-19 2009-12-03 Seiko Epson Corp 半導体装置の製造方法
JP2009283494A (ja) * 2008-05-19 2009-12-03 Seiko Epson Corp 半導体装置の製造方法
WO2020098738A1 (en) * 2018-11-16 2020-05-22 Changxin Memory Technologies, Inc. Semiconductor device and fabricating method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4576834A (en) * 1985-05-20 1986-03-18 Ncr Corporation Method for forming trench isolation structures
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
JPH07105436B2 (ja) * 1986-07-18 1995-11-13 株式会社東芝 半導体装置の製造方法
US4906585A (en) * 1987-08-04 1990-03-06 Siemens Aktiengesellschaft Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches

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