JPH10270637A - 複数のicチップを備えた半導体装置の構造 - Google Patents

複数のicチップを備えた半導体装置の構造

Info

Publication number
JPH10270637A
JPH10270637A JP6854097A JP6854097A JPH10270637A JP H10270637 A JPH10270637 A JP H10270637A JP 6854097 A JP6854097 A JP 6854097A JP 6854097 A JP6854097 A JP 6854097A JP H10270637 A JPH10270637 A JP H10270637A
Authority
JP
Japan
Prior art keywords
chip
chips
bumps
another
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6854097A
Other languages
English (en)
Other versions
JP3349058B2 (ja
Inventor
Tadahiro Morifuji
忠洋 森藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP06854097A priority Critical patent/JP3349058B2/ja
Priority to US09/045,135 priority patent/US6175157B1/en
Publication of JPH10270637A publication Critical patent/JPH10270637A/ja
Application granted granted Critical
Publication of JP3349058B2 publication Critical patent/JP3349058B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06582Housing for the assembly, e.g. chip scale package [CSP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10162Shape being a cuboid with a square active surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 一つのICチップ2の上面に別のICチップ
4を積み重ねて、この別のICチップを前記一つのIC
チップにその周囲に設けたバンプ4bを介して電気的に
接続する場合に、両ICチップ2,4の中心部分の湾曲
変形によって、割れが発生したり、両ICチップ2,4
の回路素子にダメージを及ぼしたりすることを低減す
る。 【手段】 前記両ICチップ2,4の合わせ面のうち前
記各バンプ4bより内側の中心部分に捨てバンプ3を設
けて、前記の湾曲変形を小さくする。

Description

【発明の詳細な説明】
【0001】
【発明の属する技術分野】本発明は、一つのICチップ
の上面に、別のICチップを積み重ねて接続することに
よって、集積度を高めるようにした半導体装置に関する
ものである。
【0002】
【従来の技術】最近、ICチップを使用した半導体装置
における集積度を高めるために、一つのICチップの上
面に、別のICチップを積み重ね、この別のICチップ
を前記一つのICチップに対して、当該別のICチップ
の周囲に沿って適宜ピッチの間隔で設けた複数個のバン
プにて電気的に接続することが提案されている。
【0003】
【発明が解決しようとする課題】しかし、一つの上面に
積み重ねた別のICチップを、その周囲に沿って設けた
複数個のバンプにて、前記一つのICチップに対して電
気的に接続するように構成した場合、前記別のICチッ
プのうち前記各バンプより内側の中心部分には、前記一
つのICチップとの間に隙間ができ、換言すると、前記
別のICチップと、その周囲に設けた各バンプにて一つ
のICチップに対して支持されていることにより、この
別のICチップは、当該別のICチップのうち前記各バ
ンプより内側の中心部分に一つのICチップに向かう方
向の外力を受けたときにおいて、前記中心部分が一つの
ICチップに接近するように湾曲変形し易く形態になっ
ており、また、前記一つのICチップも、当該一つのI
Cチップのうち前記各バンプより内側の中心部分に別の
ICチップに向かう方向の外力を受けたときにおいて、
前記中心部分が別のICチップに接近するように湾曲変
形し易い形態になっているから、前記別のICチップ又
は一つのICチップに割れが発生するばかりか、これら
両ICチップのうち互いに対向する面に形成されている
各種の回路素子にダメージを及ぼすことが多発すると言
う問題があり、特に、これらの問題は、前記一つのIC
チップの上面に積み重ね接続する別のICチップにおけ
る大型化に比例して増大するのであった。
【0004】本発明は、この問題を解消できるようにし
た半導体装置の構造を提供することを技術的課題とする
ものである。
【0005】
【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「一つのICチップの上面に別のIC
チップを積み重ね、この別のICチップを前記一つのI
Cチップに対して、これら両ICチップのうちいずれか
一方又は両方に前記別のICチップの周囲に沿って適宜
間隔で設けたパンプにて電気的に接続して成る半導体装
置において、前記一つのICチップが前記別のICチッ
プに相対する面、及び前記別のICチップが前記一つの
ICチップに相対する面のうちいずれか一方又は両方の
面に、前記各バンプより内側の中心部分に少なくとも一
つ以上の捨てバンプを設ける。」と言う構成にした。
【0006】
【発明の作用・効果】このように構成することにより、
両ICチップが、当該両ICチップのうち各バンプより
内側の中心部分に外力を受けて、前記中心部分が互いに
接近するように湾曲変形しても、この湾曲変形を、前記
中心部分に少なくとも一つ以上設けた捨てバンプにて小
さい値にとどめることができるか、前記の湾曲変形を皆
無にすることができるのである。
【0007】従って、本発明によると、一つのICチッ
プの上面に対して別のICチップを積み重ねて、その周
囲に設けた複数個のバンプにて接続する場合において、
両ICチップを大きくしても、これら両ICチップに及
ぶ外力のために、両ICチップが割れること、及び、両
ICチップにおける回路素子にダメージを及ぼすことを
確実に低減できる効果を有する。
【0008】特に、「請求項2」に記載したように、前
記捨てバンプを、電気接続用バンプに構成することによ
り、両ICチップの相互間を電気的に接続するバンプの
一部を利用して両ICチップの湾曲変形を小さく又は皆
無できるから、バンプの数を多くすることを回避できる
利点がある。
【0009】
【発明の実施の形態】以下、本発明の実施の形態を、図
1〜図6の図面について説明する。この図において、符
号1は、平面において略矩形に形成したチップマウント
部1aと、このチップマウント部1aにおける四つの各
辺から外向きに延びる複数本のリード端子1bとを備え
た金属板製のリードフレームを示す。
【0010】符号2は、前記リードフレーム1における
チップマウント1aの上面にダイボンディングされる一
つのICチップを示し、この一つのICチップ2は、平
面視において矩形状に形成され、その上面には、中心部
分に図示しない能動素子又は受動素子等のような回路素
子の多数個が形成されていると共に、外側の部分に、外
部への接続用電極パッド1aの複数個が周囲に沿って適
宜間隔で形成され、この外部への接続用電極パッド1a
の内側に、複数個の接続用電極パッド1bが周囲に沿っ
て適宜間隔で形成されている。
【0011】また、符号4は、前記一つのICチップ2
の上面に積み重ねられる別のICチップを示し、この別
のICチップ4は、前記一つのICチップ2よりも小さ
い寸法の矩形状に形成され、その下面には、中心部分に
図示しない能動素子又は受動素子等のような回路素子の
多数個が形成されていると共に、外側の部分に、接続用
電極パッド4aの複数個が、当該別のICチップ4にお
ける周囲に沿って適宜間隔で形成され、この各接続用電
極パッド4aの各々には、一つのICチップ2に向かっ
て突出するバンプ4bが設けられ、更に、前記別のIC
チップ4の下面のうちその周囲における前記各接続用電
極パッド4aよりも内側の中心部分には、少なくとも一
つ以上(本実施形態では四個)の捨てバンプ3が、前記
一つのICチップ2に向かって突出するように設けられ
ている。
【0012】更にまた、符号5は、前記一つのICチッ
プ2における上面と、前記別のICチップ4の下面との
間に介挿した接着フィルムを示し、この両接着フィルム
5には、導電粒子が混入されている。そして、前記一つ
のICチップ2を、前記リードフレーム1におけるチッ
プマウント部1aの上面に、図3に示すように、一つの
ICチップ2をダイボンディングしたのち、この一つの
ICチップ2の上面に対して、別のICチップ4を、そ
の間に接着フィルム5を挟んで押圧する。
【0013】この押圧により、前記接着フィルム5は、
両ICチップ2,4に対して接着するから、この接着フ
ィルム5を介して両ICチップ2,4を互いに接着でき
るのであり、これと同時に、この接着フィルム5のうち
別のICチップ4における各接続用電極パッド4aに設
けたバンプ4bに該当する部分が、このバンプ4bに
て、図4及び図5に示すように、部分的に強く圧縮変形
されることになり、この強く圧縮変形される部分では、
これに混入した導電粒子が互いに接触することになり、
その結果、前記接着フィルム5のうち前記のように強く
圧縮変形される部分が、厚さ方向についてのみ導電性を
呈することになるから、前記別のICチップ4における
各接続用電極パッド4aと、前記一つのICチップ2の
上面に設けられている各接続用電極パッド2bとの相互
間を、前記接着フィルム5を介して電気的に接続するこ
とができる。
【0014】この状態で、前記接着フィルム5を乾燥・
硬化することにより、両ICチップ2,4を、その間を
電気的に接続した状態のもとで、一体的に結合できるの
である。この場合において、前記別のICチップ4は、
その周囲に設けた各バンプ4bを介して一つのICチッ
プ2に対して支持されると言う形態になっていることに
より、前記別のICチップ4における下面のうちその周
囲の各接続用電極パッド4aよりも内側の中心部分に捨
てバンプ3が設けられていないときには、前記別のIC
チップ4のうち前記各バンプより内側の中心部分に一つ
のICチップ2に向かう方向の外力を受けたときにおい
て、前記中心部分が一つのICチップ2に接近するよう
に容易に湾曲変形することになるから、当該別のICチ
ップ4又は一つのICチップ2に割れが発生したり、こ
れら両ICチップ2,4のうち互いに対向する面に形成
されている各種の回路素子にダメージを及ぼしたりする
ことが多発するのである。
【0015】これに対し、前記したように、別のICチ
ップ4における下面のうちその周囲の各接続用電極パッ
ド4aよりも内側の中心部分に捨てバンプ3を設けると
言う構成にすることにより、両ICチップ2,4が、当
該両ICチップ2,4のうちその周囲における各バンプ
4bより内側の中心部分に外力を受けて、前記中心部分
が互いに接近するように湾曲変形しても、この湾曲変形
を、前記中心部分に貼着した軟質フィルム3にて小さい
値にとどめることができるか、或いは、前記の湾曲変形
を皆無にすることができるのである。
【0016】なお、前記実施の形態は、一つのICチッ
プ2の別のICチップ4との相互間をその周囲において
電気的に接続する各バンプ4bを、別のICチップ4に
おける各接続用電極パッド4a側に設ける一方、前記両
ICチップ2,4の湾曲変形を小さく規制するか皆無に
するための捨てバンプ3を、別のICチップ4側に設け
た場合を示したが、本発明はこれに限らず、前記バンプ
4bを、一つのICチップ2における各接続用電極パッ
ド2b側に設けたり、或いは、一つのICチップ2にお
ける各接続用電極パッド2bと別のICチップ4におけ
る各接続用電極パッド4aとの両方に設けるようにして
も良く、また、前記捨てバンプ3を、一つのICチップ
2側に貼着したり、或いは、両ICチップ2,4の両方
に設けるように構成しても良いことは言うまでもない。
【0017】更にまた、前記捨てバンプ3を、前記別の
ICチップ4の周囲に設けた各バンプ4bと同様に、両
ICチップ2,4の相互間を電気的に接続するものに構
成しても良いのである。このようにして、一つのICチ
ップ2をリードフレーム1にダイボンディングし、この
一つのICチップ2に対して別にICチップ4を固着す
ると、図6に示すように、前記一つのICチップ2にお
ける周囲の各接続用電極パッド1aと、リードフレーム
1における各リード端子1bとの間を細い金属線6にて
ワイヤボンディングしたのち、前記両ICチップ2,4
の全体を、二点鎖線で示すように、熱硬化性合成樹脂の
トランスファ成形によるパッケージ体7にて密封する。
【0018】次いで、前記各リード端子1bを、リード
フレーム1から切り離したのち、図6に二点鎖線で示す
ように、折り曲げることにより、半導体装置の完成品に
するのである。
【図面の簡単な説明】
【図1】本発明の実施の形態を示す分解斜視図である。
【図2】図1の縦断正面図である。
【図3】リードフレームに対して一つのICチップを固
着した状態を示す縦断正面図である。
【図4】前記一つのICチップに対して別のICチップ
を固着した状態を示す縦断正面図である。
【図5】図4の要部拡大図である。
【図6】半導体装置の縦断正面図である。
【符号の説明】
1 リードフレーム 1b リード端子 2 一つのICチップ 2a,2b 接続用電極パッド 3 捨てバンプ 4 別のICチップ 4a 接続用電極パッド 4b バンプ 5 接着フィルム 6 金属線 7 パッケージ体

Claims (2)

    【特許請求の範囲】
  1. 【請求項1】一つのICチップの上面に別のICチップ
    を積み重ね、この別のICチップを前記一つのICチッ
    プに対して、これら両ICチップのうちいずれか一方又
    は両方に前記別のICチップの周囲に沿って適宜間隔で
    設けたパンプにて電気的に接続して成る半導体装置にお
    いて、 前記一つのICチップが前記別のICチップに相対する
    面、及び前記別のICチップが前記一つのICチップに
    相対する面のうちいずれか一方又は両方の面に、前記各
    バンプより内側の中心部分に少なくとも一つ以上の捨て
    バンプを設けたことを特徴とする複数のICチップを備
    えた半導体装置の構造。
  2. 【請求項2】前記「請求項1」において、捨てバンプの
    一部又は全部を、電気接続用のバンプに構成したことを
    特徴とする複数のICチップを備えた半導体装置の構
    造。
JP06854097A 1997-03-21 1997-03-21 複数のicチップを備えた半導体装置の構造 Expired - Fee Related JP3349058B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP06854097A JP3349058B2 (ja) 1997-03-21 1997-03-21 複数のicチップを備えた半導体装置の構造
US09/045,135 US6175157B1 (en) 1997-03-21 1998-03-20 Semiconductor device package for suppressing warping in semiconductor chips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06854097A JP3349058B2 (ja) 1997-03-21 1997-03-21 複数のicチップを備えた半導体装置の構造

Publications (2)

Publication Number Publication Date
JPH10270637A true JPH10270637A (ja) 1998-10-09
JP3349058B2 JP3349058B2 (ja) 2002-11-20

Family

ID=13376688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06854097A Expired - Fee Related JP3349058B2 (ja) 1997-03-21 1997-03-21 複数のicチップを備えた半導体装置の構造

Country Status (2)

Country Link
US (1) US6175157B1 (ja)
JP (1) JP3349058B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268656B1 (en) * 1999-10-08 2001-07-31 Agilent Technologies, Inc. Method and structure for uniform height solder bumps on a semiconductor wafer
US6724084B1 (en) 1999-02-08 2004-04-20 Rohm Co., Ltd. Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device
US6744140B1 (en) 1999-09-20 2004-06-01 Rohm Co., Ltd. Semiconductor chip and method of producing the same
CN111081648A (zh) * 2018-10-18 2020-04-28 爱思开海力士有限公司 包括支承上芯片层叠物的支承块的半导体封装件

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893896B1 (en) * 1998-03-27 2005-05-17 The Trustees Of Princeton University Method for making multilayer thin-film electronics
JP2000232235A (ja) * 1999-02-09 2000-08-22 Rohm Co Ltd 半導体装置
JP3418134B2 (ja) * 1999-02-12 2003-06-16 ローム株式会社 チップ・オン・チップ構造の半導体装置
US6348739B1 (en) * 1999-04-28 2002-02-19 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
EP1077490A1 (en) * 1999-08-17 2001-02-21 Lucent Technologies Inc. Improvements in or relating to integrated circuit dies
US6424033B1 (en) * 1999-08-31 2002-07-23 Micron Technology, Inc. Chip package with grease heat sink and method of making
US6483190B1 (en) * 1999-10-20 2002-11-19 Fujitsu Limited Semiconductor chip element, semiconductor chip element mounting structure, semiconductor chip element mounting device and mounting method
US6376914B2 (en) * 1999-12-09 2002-04-23 Atmel Corporation Dual-die integrated circuit package
US6426559B1 (en) * 2000-06-29 2002-07-30 National Semiconductor Corporation Miniature 3D multi-chip module
JP3683179B2 (ja) * 2000-12-26 2005-08-17 松下電器産業株式会社 半導体装置及びその製造方法
JP2002313995A (ja) * 2001-04-19 2002-10-25 Mitsubishi Electric Corp ランドグリッドアレイ型半導体装置およびその実装方法
KR100415279B1 (ko) * 2001-06-26 2004-01-16 삼성전자주식회사 칩 적층 패키지 및 그 제조 방법
JP3490987B2 (ja) * 2001-07-19 2004-01-26 沖電気工業株式会社 半導体パッケージおよびその製造方法
US20030038356A1 (en) * 2001-08-24 2003-02-27 Derderian James M Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods
US6815832B2 (en) * 2001-09-28 2004-11-09 Rohm Co., Ltd. Semiconductor device having opposed and connected semiconductor chips with lateral deviation confirming electrodes
US6753613B2 (en) * 2002-03-13 2004-06-22 Intel Corporation Stacked dice standoffs
US7276802B2 (en) * 2002-04-15 2007-10-02 Micron Technology, Inc. Semiconductor integrated circuit package having electrically disconnected solder balls for mounting
US6734044B1 (en) * 2002-06-10 2004-05-11 Asat Ltd. Multiple leadframe laminated IC package
US6919642B2 (en) * 2002-07-05 2005-07-19 Industrial Technology Research Institute Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed
TW556961U (en) * 2002-12-31 2003-10-01 Advanced Semiconductor Eng Multi-chip stack flip-chip package
US6870381B2 (en) * 2003-06-27 2005-03-22 Formfactor, Inc. Insulative covering of probe tips
US7074647B2 (en) * 2003-07-07 2006-07-11 Freescale Semiconductor, Inc. Semiconductor component comprising leadframe, semiconductor chip and integrated passive component in vertical relationship to each other
US7547975B2 (en) * 2003-07-30 2009-06-16 Tdk Corporation Module with embedded semiconductor IC and method of fabricating the module
TW200618705A (en) * 2004-09-16 2006-06-01 Tdk Corp Multilayer substrate and manufacturing method thereof
JP4768994B2 (ja) * 2005-02-07 2011-09-07 ルネサスエレクトロニクス株式会社 配線基板および半導体装置
JP2007042736A (ja) * 2005-08-01 2007-02-15 Seiko Epson Corp 半導体装置及び電子モジュール、並びに、電子モジュールの製造方法
JP4535002B2 (ja) 2005-09-28 2010-09-01 Tdk株式会社 半導体ic内蔵基板及びその製造方法
KR100719376B1 (ko) * 2006-01-05 2007-05-17 삼성전자주식회사 실장 불량을 줄일 수 있는 패드 구조체를 구비하는 반도체장치
TWI292614B (en) * 2006-01-20 2008-01-11 Advanced Semiconductor Eng Flip chip on leadframe package and method of making the same
JP2007266111A (ja) * 2006-03-27 2007-10-11 Sharp Corp 半導体装置、それを用いた積層型半導体装置、ベース基板、および半導体装置の製造方法
US8022554B2 (en) 2006-06-15 2011-09-20 Sitime Corporation Stacked die package for MEMS resonator system
TWI310983B (en) * 2006-10-24 2009-06-11 Au Optronics Corp Integrated circuit structure, display module, and inspection method thereof
JP2008227271A (ja) * 2007-03-14 2008-09-25 Fujitsu Ltd 電子装置および電子部品実装方法
FR2918212B1 (fr) * 2007-06-27 2009-09-25 Fr De Detecteurs Infrarouges S Procede pour la realisation d'une matrice de rayonnements electromagnetiques et procede pour remplacer un module elementaire d'une telle matrice de detection.
US20090014870A1 (en) * 2007-07-12 2009-01-15 United Microelectronics Corp. Semiconductor chip and package process for the same
US8205182B1 (en) * 2007-08-22 2012-06-19 Cadence Design Systems, Inc. Automatic synthesis of clock distribution networks
JP4693852B2 (ja) * 2008-02-22 2011-06-01 パナソニック株式会社 半導体装置および半導体装置の製造方法
WO2009118925A1 (ja) * 2008-03-27 2009-10-01 イビデン株式会社 電子部品内蔵配線板及びその製造方法
KR101632399B1 (ko) 2009-10-26 2016-06-23 삼성전자주식회사 반도체 패키지 및 그 제조방법
US8604614B2 (en) * 2010-03-26 2013-12-10 Samsung Electronics Co., Ltd. Semiconductor packages having warpage compensation
US8916969B2 (en) * 2011-07-29 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, packaging methods and structures
US8522186B2 (en) * 2011-12-16 2013-08-27 Industrial Technology Research Institute Method and apparatus of an integrated circuit
CN103208501B (zh) * 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
JP5660260B2 (ja) * 2012-10-05 2015-01-28 株式会社村田製作所 電子部品内蔵モジュール及び通信端末装置
KR102190382B1 (ko) 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
KR102287754B1 (ko) 2014-08-22 2021-08-09 삼성전자주식회사 칩 적층 반도체 패키지
CN110088884A (zh) * 2016-11-30 2019-08-02 深圳修远电子科技有限公司 集成电路多芯片层叠封装结构以及方法
KR102450575B1 (ko) * 2018-07-10 2022-10-07 삼성전자주식회사 뒤틀림의 제어를 위한 채널을 포함하는 반도체 칩 모듈 및 이의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194652A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
JP2876773B2 (ja) * 1990-10-22 1999-03-31 セイコーエプソン株式会社 プログラム命令語長可変型計算装置及びデータ処理装置
US5400950A (en) * 1994-02-22 1995-03-28 Delco Electronics Corporation Method for controlling solder bump height for flip chip integrated circuit devices
US5523628A (en) * 1994-08-05 1996-06-04 Hughes Aircraft Company Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips
US5686703A (en) * 1994-12-16 1997-11-11 Minnesota Mining And Manufacturing Company Anisotropic, electrically conductive adhesive film
KR100438256B1 (ko) * 1995-12-18 2004-08-25 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
US5813870A (en) * 1996-07-12 1998-09-29 International Business Machines Corporation Selectively filled adhesives for semiconductor chip interconnection and encapsulation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724084B1 (en) 1999-02-08 2004-04-20 Rohm Co., Ltd. Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device
US7045900B2 (en) 1999-02-08 2006-05-16 Rohm Co., Ltd Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device
US6744140B1 (en) 1999-09-20 2004-06-01 Rohm Co., Ltd. Semiconductor chip and method of producing the same
US6268656B1 (en) * 1999-10-08 2001-07-31 Agilent Technologies, Inc. Method and structure for uniform height solder bumps on a semiconductor wafer
CN111081648A (zh) * 2018-10-18 2020-04-28 爱思开海力士有限公司 包括支承上芯片层叠物的支承块的半导体封装件
CN111081648B (zh) * 2018-10-18 2023-08-22 爱思开海力士有限公司 包括支承上芯片层叠物的支承块的半导体封装件

Also Published As

Publication number Publication date
JP3349058B2 (ja) 2002-11-20
US6175157B1 (en) 2001-01-16

Similar Documents

Publication Publication Date Title
JP3349058B2 (ja) 複数のicチップを備えた半導体装置の構造
JP3736516B2 (ja) リードフレームおよびその製造方法ならびに樹脂封止型半導体装置およびその製造方法
JPH11312706A (ja) 樹脂封止型半導体装置及びその製造方法、リードフレーム
JPH07123149B2 (ja) 半導体パッケージ
JPH10256470A (ja) 半導体装置
US7126209B2 (en) Lead frame, resin-encapsulated semiconductor device, and method of producing the same
JP3417095B2 (ja) 半導体装置
JP2001035961A (ja) 半導体装置及びその製造方法
JP3259377B2 (ja) 半導体装置
JP3290869B2 (ja) 半導体装置
JP3248853B2 (ja) 複数のicチップを備えた密封型半導体装置の構造
JP3248854B2 (ja) 複数のicチップを備えた半導体装置の構造
JP3286196B2 (ja) 複数のicチップを備えた密封型半導体装置の構造
JP3543254B2 (ja) 複数のicチップを備えた半導体装置の構造
JPH10335366A (ja) 半導体装置
JP3543253B2 (ja) 複数のicチップを備えた半導体装置の構造
EP0999586A2 (en) Semiconductor device and method of producing same
JP2000196005A (ja) 半導体装置
JP7458825B2 (ja) パッケージおよび半導体装置
JPH0621305A (ja) 半導体装置
KR100218335B1 (ko) 칩 사이즈 패키지
JPH07335818A (ja) 半導体装置
JP3439890B2 (ja) 半導体装置及びその製造方法
JP2002009570A (ja) 電子部品とその製造方法
KR20020008875A (ko) Loc형 반도체 칩 패키지

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080913

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110913

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120913

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees