JPH10242422A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPH10242422A
JPH10242422A JP9046810A JP4681097A JPH10242422A JP H10242422 A JPH10242422 A JP H10242422A JP 9046810 A JP9046810 A JP 9046810A JP 4681097 A JP4681097 A JP 4681097A JP H10242422 A JPH10242422 A JP H10242422A
Authority
JP
Japan
Prior art keywords
insulating film
electrode
bit line
forming
plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9046810A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242422A5 (enExample
Inventor
Masami Aoki
正身 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9046810A priority Critical patent/JPH10242422A/ja
Priority to US09/030,248 priority patent/US6281540B1/en
Publication of JPH10242422A publication Critical patent/JPH10242422A/ja
Priority to US09/900,148 priority patent/US6455368B2/en
Publication of JPH10242422A5 publication Critical patent/JPH10242422A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
JP9046810A 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法 Pending JPH10242422A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9046810A JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法
US09/030,248 US6281540B1 (en) 1997-02-28 1998-02-25 Semiconductor memory device having bitlines of common height
US09/900,148 US6455368B2 (en) 1997-02-28 2001-07-09 Semiconductor memory device having bitlines of common height

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9046810A JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH10242422A true JPH10242422A (ja) 1998-09-11
JPH10242422A5 JPH10242422A5 (enExample) 2005-01-27

Family

ID=12757693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9046810A Pending JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法

Country Status (2)

Country Link
US (2) US6281540B1 (enExample)
JP (1) JPH10242422A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023111A (ja) * 2001-07-06 2003-01-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100403329B1 (ko) * 1999-12-30 2003-10-30 주식회사 하이닉스반도체 반도체소자의 비트라인 형성방법
JP2004274025A (ja) * 2003-02-21 2004-09-30 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US7326985B2 (en) 2001-04-24 2008-02-05 Infineon Technologies Ag Method for fabricating metallic bit-line contacts
JP2008288594A (ja) * 2007-05-16 2008-11-27 Samsung Electronics Co Ltd 層間導電性コンタクトを含む半導体素子及びその形成方法
US7737480B2 (en) 2006-08-09 2010-06-15 Panasonic Corporation Semiconductor memory device and manufacturing method thereof
JP2010226132A (ja) * 1999-01-12 2010-10-07 Alcatel-Lucent Usa Inc デュアル・ダマーシン相互接続構造および金属電極コンデンサを有する集積回路デバイスとその製造方法
US8063425B2 (en) 2007-09-18 2011-11-22 Samsung Electronics Co., Ltd. Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
US8120123B2 (en) 2007-09-18 2012-02-21 Samsung Electronics Co., Ltd. Semiconductor device and method of forming the same
US8169074B2 (en) 2009-07-23 2012-05-01 Samsung Electronics Co., Ltd. Semiconductor devices including first and second silicon interconnection regions

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242302B1 (en) * 1998-09-03 2001-06-05 Micron Technology, Inc. Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
DE19926501A1 (de) * 1999-06-10 2000-12-21 Siemens Ag Verfahren zur Herstellung eines Halbleiterspeicherbauelements
US6333225B1 (en) 1999-08-20 2001-12-25 Micron Technology, Inc. Integrated circuitry and methods of forming circuitry
KR100356135B1 (ko) * 1999-12-08 2002-10-19 동부전자 주식회사 반도체 장치의 제조방법
KR100338775B1 (ko) * 2000-06-20 2002-05-31 윤종용 Ｄｒａｍ을 포함하는 반도체 소자의 콘택 구조체 및 그형성방법
US6406968B1 (en) * 2001-01-23 2002-06-18 United Microelectronics Corp. Method of forming dynamic random access memory
US6656785B2 (en) * 2001-10-15 2003-12-02 Taiwan Semiconductor Manufacturing Co. Ltd MIM process for logic-based embedded RAM
KR100475084B1 (ko) * 2002-08-02 2005-03-10 삼성전자주식회사 Ｄｒａｍ 반도체 소자 및 그 제조방법
KR100505443B1 (ko) * 2002-12-26 2005-08-04 주식회사 하이닉스반도체 반도체소자 제조방법
JP4744788B2 (ja) * 2003-05-22 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7282757B2 (en) * 2003-10-20 2007-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitor structure and method of manufacture
US7557001B2 (en) * 2005-07-05 2009-07-07 Micron Technology, Inc. Semiconductor processing methods
KR100720261B1 (ko) * 2006-01-26 2007-05-23 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
JP2010219326A (ja) * 2009-03-17 2010-09-30 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2012099793A (ja) * 2010-10-07 2012-05-24 Elpida Memory Inc 半導体装置及びその製造方法
US9764153B2 (en) 2013-03-14 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method of forming same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591659A (en) * 1992-04-16 1997-01-07 Fujitsu Limited Process of producing a semiconductor device in which a height difference between a memory cell area and a peripheral area is eliminated
KR950012554B1 (ko) * 1992-06-24 1995-10-18 현대전자산업주식회사 고집적 반도체소자의 전하저장전극 제조방법
JP3603229B2 (ja) * 1994-02-09 2004-12-22 富士通株式会社 半導体記憶装置
US5629539A (en) 1994-03-09 1997-05-13 Kabushiki Kaisha Toshiba Semiconductor memory device having cylindrical capacitors
TW287313B (enExample) * 1995-02-20 1996-10-01 Matsushita Electric Industrial Co Ltd
JPH09191084A (ja) * 1996-01-10 1997-07-22 Nec Corp 半導体装置及びその製造方法
JP2755243B2 (ja) * 1996-01-23 1998-05-20 日本電気株式会社 半導体記憶装置およびその製造方法
KR100213209B1 (ko) * 1996-07-29 1999-08-02 윤종용 반도체장치의 제조방법
US5882535A (en) * 1997-02-04 1999-03-16 Micron Technology, Inc. Method for forming a hole in a semiconductor device
TW365065B (en) * 1997-07-19 1999-07-21 United Microelectronics Corp Embedded memory structure and manufacturing method thereof

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010226132A (ja) * 1999-01-12 2010-10-07 Alcatel-Lucent Usa Inc デュアル・ダマーシン相互接続構造および金属電極コンデンサを有する集積回路デバイスとその製造方法
KR100403329B1 (ko) * 1999-12-30 2003-10-30 주식회사 하이닉스반도체 반도체소자의 비트라인 형성방법
US7326985B2 (en) 2001-04-24 2008-02-05 Infineon Technologies Ag Method for fabricating metallic bit-line contacts
JP2003023111A (ja) * 2001-07-06 2003-01-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
US8492813B2 (en) 2003-02-21 2013-07-23 Renesas Electronics Corporation Semiconductor device and semiconductor device manufacturing method
JP2004274025A (ja) * 2003-02-21 2004-09-30 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US7919799B2 (en) 2003-02-21 2011-04-05 Renesas Electronics Corporation Semiconductor device and semiconductor device manufacturing method
US8058679B2 (en) 2003-02-21 2011-11-15 Renesas Electronics Corporation Semiconductor device and semiconductor device manufacturing method
US8647944B2 (en) 2003-02-21 2014-02-11 Renesas Electronics Corporation Semiconductor device and semiconductor device manufacturing method
US7737480B2 (en) 2006-08-09 2010-06-15 Panasonic Corporation Semiconductor memory device and manufacturing method thereof
JP2008288594A (ja) * 2007-05-16 2008-11-27 Samsung Electronics Co Ltd 層間導電性コンタクトを含む半導体素子及びその形成方法
US8450786B2 (en) 2007-09-18 2013-05-28 Samsung Electronics Co., Ltd. Semiconductor devices including buried gate electrodes
US8120123B2 (en) 2007-09-18 2012-02-21 Samsung Electronics Co., Ltd. Semiconductor device and method of forming the same
US8063425B2 (en) 2007-09-18 2011-11-22 Samsung Electronics Co., Ltd. Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same
US8766356B2 (en) 2007-09-18 2014-07-01 Samsung Electronics Co., Ltd. Semiconductor devices having bit line insulating capping patterns and multiple conductive patterns thereon
US8169074B2 (en) 2009-07-23 2012-05-01 Samsung Electronics Co., Ltd. Semiconductor devices including first and second silicon interconnection regions

Also Published As

Publication number Publication date
US6455368B2 (en) 2002-09-24
US6281540B1 (en) 2001-08-28
US20010041405A1 (en) 2001-11-15

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