JPH10112181A5 - - Google Patents

Info

Publication number
JPH10112181A5
JPH10112181A5 JP1996267277A JP26727796A JPH10112181A5 JP H10112181 A5 JPH10112181 A5 JP H10112181A5 JP 1996267277 A JP1996267277 A JP 1996267277A JP 26727796 A JP26727796 A JP 26727796A JP H10112181 A5 JPH10112181 A5 JP H10112181A5
Authority
JP
Japan
Prior art keywords
selection level
memory device
semiconductor memory
level
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996267277A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10112181A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8267277A priority Critical patent/JPH10112181A/ja
Priority claimed from JP8267277A external-priority patent/JPH10112181A/ja
Priority to US08/822,981 priority patent/US5982701A/en
Priority to KR1019970010206A priority patent/KR100245179B1/ko
Priority to TW086104683A priority patent/TW325571B/zh
Publication of JPH10112181A publication Critical patent/JPH10112181A/ja
Publication of JPH10112181A5 publication Critical patent/JPH10112181A5/ja
Pending legal-status Critical Current

Links

JP8267277A 1996-10-08 1996-10-08 半導体記憶装置 Pending JPH10112181A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8267277A JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置
US08/822,981 US5982701A (en) 1996-10-08 1997-03-21 Semiconductor memory device with reduced inter-band tunnel current
KR1019970010206A KR100245179B1 (ko) 1996-10-08 1997-03-25 반도체 기억 장치
TW086104683A TW325571B (en) 1996-10-08 1997-04-11 Semiconductor memory device with reduced inter-band tunnel current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8267277A JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10112181A JPH10112181A (ja) 1998-04-28
JPH10112181A5 true JPH10112181A5 (enExample) 2004-08-26

Family

ID=17442609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8267277A Pending JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置

Country Status (4)

Country Link
US (1) US5982701A (enExample)
JP (1) JPH10112181A (enExample)
KR (1) KR100245179B1 (enExample)
TW (1) TW325571B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045361A (ko) * 1998-12-30 2000-07-15 김영환 워드라인 구동장치
US6198670B1 (en) * 1999-06-22 2001-03-06 Micron Technology, Inc. Bias generator for a four transistor load less memory cell
JP3948183B2 (ja) * 2000-02-24 2007-07-25 富士通株式会社 半導体記憶装置
KR100655279B1 (ko) 2000-12-14 2006-12-08 삼성전자주식회사 불휘발성 반도체 메모리 장치
US6785186B2 (en) * 2002-08-21 2004-08-31 Micron Technology, Inc. Design of an high speed xdecoder driving a large wordline load consuming less switching current for use in high speed syncflash memory
US7301849B2 (en) * 2003-07-11 2007-11-27 Texas Instruments Incorporated System for reducing row periphery power consumption in memory devices
JP5151106B2 (ja) * 2006-09-27 2013-02-27 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP2008135099A (ja) 2006-11-27 2008-06-12 Elpida Memory Inc 半導体記憶装置
JP4962206B2 (ja) * 2007-08-10 2012-06-27 富士通セミコンダクター株式会社 半導体記憶装置及びワードデコーダ制御方法
KR100968155B1 (ko) * 2008-10-02 2010-07-06 주식회사 하이닉스반도체 반도체 메모리 장치
FR2959057B1 (fr) * 2010-04-20 2012-07-20 St Microelectronics Crolles 2 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.
KR20160149845A (ko) * 2015-06-19 2016-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008722B1 (ko) * 1991-12-04 1994-09-26 삼성전자 주식회사 반도체 메모리 장치의 워드라인 드라이버 배열방법
JPH0684354A (ja) * 1992-05-26 1994-03-25 Nec Corp 行デコーダ回路
JP2842181B2 (ja) * 1993-11-04 1998-12-24 日本電気株式会社 半導体メモリ装置
JP3636233B2 (ja) * 1995-12-27 2005-04-06 富士通株式会社 ワードドライバ回路及びそれを利用したメモリ回路

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