FR2959057B1 - Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots. - Google Patents

Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.

Info

Publication number
FR2959057B1
FR2959057B1 FR1052969A FR1052969A FR2959057B1 FR 2959057 B1 FR2959057 B1 FR 2959057B1 FR 1052969 A FR1052969 A FR 1052969A FR 1052969 A FR1052969 A FR 1052969A FR 2959057 B1 FR2959057 B1 FR 2959057B1
Authority
FR
France
Prior art keywords
memory device
dynamic live
improved circuitry
live memory
words lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1052969A
Other languages
English (en)
Other versions
FR2959057A1 (fr
Inventor
Olivier Jeantet
Marc Vernet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1052969A priority Critical patent/FR2959057B1/fr
Priority to US13/642,230 priority patent/US8902692B2/en
Priority to PCT/EP2011/055688 priority patent/WO2011131511A1/fr
Publication of FR2959057A1 publication Critical patent/FR2959057A1/fr
Application granted granted Critical
Publication of FR2959057B1 publication Critical patent/FR2959057B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
FR1052969A 2010-04-20 2010-04-20 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots. Expired - Fee Related FR2959057B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1052969A FR2959057B1 (fr) 2010-04-20 2010-04-20 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.
US13/642,230 US8902692B2 (en) 2010-04-20 2011-04-12 Dynamic random access memory device with improved control circuitry for the word lines
PCT/EP2011/055688 WO2011131511A1 (fr) 2010-04-20 2011-04-12 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052969A FR2959057B1 (fr) 2010-04-20 2010-04-20 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.

Publications (2)

Publication Number Publication Date
FR2959057A1 FR2959057A1 (fr) 2011-10-21
FR2959057B1 true FR2959057B1 (fr) 2012-07-20

Family

ID=43332251

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052969A Expired - Fee Related FR2959057B1 (fr) 2010-04-20 2010-04-20 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.

Country Status (3)

Country Link
US (1) US8902692B2 (fr)
FR (1) FR2959057B1 (fr)
WO (1) WO2011131511A1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010837B1 (ko) * 1991-10-21 1994-11-17 현대전자산업 주식회사 Dram의 워드선 구동회로
KR960006373B1 (ko) * 1992-10-31 1996-05-15 삼성전자주식회사 반도체 메모리 장치의 워드라인 구동회로
JP2851757B2 (ja) * 1992-12-18 1999-01-27 三菱電機株式会社 半導体装置および半導体記憶装置
KR0121131B1 (ko) * 1994-10-13 1997-11-10 문정환 반도체 메모리장치의 구동회로
JPH09134591A (ja) * 1995-11-07 1997-05-20 Oki Micro Design Miyazaki:Kk 半導体メモリ装置
JPH10112181A (ja) * 1996-10-08 1998-04-28 Fujitsu Ltd 半導体記憶装置
JP2001160296A (ja) * 1999-12-01 2001-06-12 Toshiba Corp 電圧レベル変換回路及びこれを用いた半導体記憶装置
US7283406B2 (en) * 2005-07-11 2007-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage wordline driver with a three stage level shifter
JP2008287826A (ja) * 2007-05-21 2008-11-27 Panasonic Corp 半導体記憶装置
US7952939B2 (en) * 2008-06-23 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for VDD-tracking CVDD voltage supply

Also Published As

Publication number Publication date
WO2011131511A1 (fr) 2011-10-27
US8902692B2 (en) 2014-12-02
US20130128677A1 (en) 2013-05-23
FR2959057A1 (fr) 2011-10-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231