IT1397228B1 - Dispositivo di memoria con singolo transistore di selezione - Google Patents

Dispositivo di memoria con singolo transistore di selezione

Info

Publication number
IT1397228B1
IT1397228B1 ITMI2009A002349A ITMI20092349A IT1397228B1 IT 1397228 B1 IT1397228 B1 IT 1397228B1 IT MI2009A002349 A ITMI2009A002349 A IT MI2009A002349A IT MI20092349 A ITMI20092349 A IT MI20092349A IT 1397228 B1 IT1397228 B1 IT 1397228B1
Authority
IT
Italy
Prior art keywords
memory device
selection transistor
single selection
transistor
memory
Prior art date
Application number
ITMI2009A002349A
Other languages
English (en)
Inventor
Davide Lena
Santis Fabio De
Marco Pasotti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI2009A002349A priority Critical patent/IT1397228B1/it
Priority to US12/975,055 priority patent/US8693256B2/en
Publication of ITMI20092349A1 publication Critical patent/ITMI20092349A1/it
Application granted granted Critical
Publication of IT1397228B1 publication Critical patent/IT1397228B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer
ITMI2009A002349A 2009-12-30 2009-12-30 Dispositivo di memoria con singolo transistore di selezione IT1397228B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITMI2009A002349A IT1397228B1 (it) 2009-12-30 2009-12-30 Dispositivo di memoria con singolo transistore di selezione
US12/975,055 US8693256B2 (en) 2009-12-30 2010-12-21 FTP memory device with single selection transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2009A002349A IT1397228B1 (it) 2009-12-30 2009-12-30 Dispositivo di memoria con singolo transistore di selezione

Publications (2)

Publication Number Publication Date
ITMI20092349A1 ITMI20092349A1 (it) 2011-06-30
IT1397228B1 true IT1397228B1 (it) 2013-01-04

Family

ID=42136225

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2009A002349A IT1397228B1 (it) 2009-12-30 2009-12-30 Dispositivo di memoria con singolo transistore di selezione

Country Status (2)

Country Link
US (1) US8693256B2 (it)
IT (1) IT1397228B1 (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1397229B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria ftp programmabile e cancellabile a livello di cella
IT1397228B1 (it) 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con singolo transistore di selezione
IT1397227B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con programmazione e cancellazione basata su effetto fowler-nordheim
ITTO20120374A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Struttura a semiconduttore con regioni conduttive a bassa temperatura di fusione e metodo per riparare una struttura a semiconduttore
FR2990553B1 (fr) * 2012-05-09 2015-02-20 Soitec Silicon On Insulator Injection fet complementaire pour une cellule a corps flottant
ITTO20120682A1 (it) 2012-07-31 2014-02-01 St Microelectronics Pvt Ltd Dispositivo di memoria non volatile con celle raggruppate
US9368209B2 (en) 2014-02-04 2016-06-14 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling
US9361982B2 (en) 2014-02-04 2016-06-07 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
US10468425B2 (en) 2014-02-04 2019-11-05 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling
US9767894B2 (en) * 2014-06-09 2017-09-19 Micron Technology, Inc. Programming memories with stepped programming pulses
ITUB20159421A1 (it) 2015-12-22 2017-06-22 St Microelectronics Srl Dispositivo per generare una tensione di riferimento comprendente una cella di memoria non volatile
US9627066B1 (en) * 2016-07-14 2017-04-18 Stmicroelectronics S.R.L. Non volatile memory cell and memory array
US10658364B2 (en) 2018-02-28 2020-05-19 Stmicroelectronics S.R.L. Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof
US11070128B2 (en) 2019-01-23 2021-07-20 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
US11258358B2 (en) 2019-01-23 2022-02-22 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
IT202100008075A1 (it) 2021-03-31 2022-10-01 St Microelectronics Srl Memoria non volatile a singolo poly, porta flottante, programmabile poche volte e relativo metodo di polarizzazone

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US4611309A (en) * 1984-09-24 1986-09-09 Advanced Micro Devices, Inc. Non-volatile dynamic RAM cell
US4672580A (en) 1985-04-30 1987-06-09 Advanced Micro Devices, Inc. Memory cell providing simultaneous non-destructive access to volatile and non-volatile data
US4752912A (en) 1985-05-14 1988-06-21 Xicor, Inc. Nonvolatile electrically alterable memory and method
JPS63138598A (ja) 1986-11-28 1988-06-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0777078B2 (ja) 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
US5075888A (en) 1988-01-09 1991-12-24 Sharp Kabushiki Kaisha Semiconductor memory device having a volatile memory device and a non-volatile memory device
US5262986A (en) 1989-01-31 1993-11-16 Sharp Kabushiki Kaisha Semiconductor memory device with volatile memory and non-volatile memory in latched arrangement
US5140551A (en) 1990-03-22 1992-08-18 Chiu Te Long Non-volatile dynamic random access memory array and the method of fabricating thereof
US5331590A (en) 1991-10-15 1994-07-19 Lattice Semiconductor Corporation Single poly EE cell with separate read/write paths and reduced product term coupling
JP2590744B2 (ja) * 1994-07-28 1997-03-12 日本電気株式会社 不揮発性半導体記憶装置
US5615150A (en) 1995-11-02 1997-03-25 Advanced Micro Devices, Inc. Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors
US6125059A (en) 1999-05-14 2000-09-26 Gatefield Corporation Method for erasing nonvolatile memory cells in a field programmable gate array
US6307781B1 (en) * 1999-09-30 2001-10-23 Infineon Technologies Aktiengesellschaft Two transistor flash memory cell
EP1376698A1 (en) * 2002-06-25 2004-01-02 STMicroelectronics S.r.l. Electrically erasable and programable non-volatile memory cell
US20050030827A1 (en) * 2002-09-16 2005-02-10 Impinj, Inc., A Delaware Corporation PMOS memory cell
US6788576B2 (en) * 2002-10-28 2004-09-07 Tower Semiconductor Ltd. Complementary non-volatile memory cell
US6989562B2 (en) * 2003-04-04 2006-01-24 Catalyst Semiconductor, Inc. Non-volatile memory integrated circuit
US6909639B2 (en) * 2003-04-22 2005-06-21 Nexflash Technologies, Inc. Nonvolatile memory having bit line discharge, and method of operation thereof
US7339829B2 (en) * 2006-03-27 2008-03-04 Tower Semiconductor Ltd. Ultra low power non-volatile memory module
US7830714B2 (en) 2007-05-25 2010-11-09 Semiconductor Components Industries, L.L.C. Non-volatile memory with high reliability
IT1397228B1 (it) 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con singolo transistore di selezione
IT1397229B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria ftp programmabile e cancellabile a livello di cella
US8355282B2 (en) 2010-06-17 2013-01-15 Ememory Technology Inc. Logic-based multiple time programming memory cell
US8279681B2 (en) 2010-06-24 2012-10-02 Semiconductor Components Industries, Llc Method of using a nonvolatile memory cell

Also Published As

Publication number Publication date
US8693256B2 (en) 2014-04-08
US20110157977A1 (en) 2011-06-30
ITMI20092349A1 (it) 2011-06-30

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