FR2990553B1 - Injection fet complementaire pour une cellule a corps flottant - Google Patents
Injection fet complementaire pour une cellule a corps flottantInfo
- Publication number
- FR2990553B1 FR2990553B1 FR1254236A FR1254236A FR2990553B1 FR 2990553 B1 FR2990553 B1 FR 2990553B1 FR 1254236 A FR1254236 A FR 1254236A FR 1254236 A FR1254236 A FR 1254236A FR 2990553 B1 FR2990553 B1 FR 2990553B1
- Authority
- FR
- France
- Prior art keywords
- injection
- floating body
- body cell
- complementary fet
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1254236A FR2990553B1 (fr) | 2012-05-09 | 2012-05-09 | Injection fet complementaire pour une cellule a corps flottant |
PCT/EP2013/059651 WO2013167691A1 (fr) | 2012-05-09 | 2013-05-08 | Injection à fet complémentaires pour une cellule à corps flottant |
US14/396,665 US20150145049A1 (en) | 2012-05-09 | 2013-05-08 | Complementary fet injection for a floating body cell |
CN201380024974.7A CN104321872B (zh) | 2012-05-09 | 2013-05-08 | 用于浮体单元的互补fet注入 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1254236A FR2990553B1 (fr) | 2012-05-09 | 2012-05-09 | Injection fet complementaire pour une cellule a corps flottant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2990553A1 FR2990553A1 (fr) | 2013-11-15 |
FR2990553B1 true FR2990553B1 (fr) | 2015-02-20 |
Family
ID=46963792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1254236A Active FR2990553B1 (fr) | 2012-05-09 | 2012-05-09 | Injection fet complementaire pour une cellule a corps flottant |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150145049A1 (fr) |
CN (1) | CN104321872B (fr) |
FR (1) | FR2990553B1 (fr) |
WO (1) | WO2013167691A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI835705B (zh) * | 2018-04-18 | 2024-03-11 | 美商季諾半導體股份有限公司 | 包括電性浮體電晶體的記憶裝置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6111778A (en) * | 1999-05-10 | 2000-08-29 | International Business Machines Corporation | Body contacted dynamic memory |
JP3808763B2 (ja) * | 2001-12-14 | 2006-08-16 | 株式会社東芝 | 半導体メモリ装置およびその製造方法 |
JP2003243528A (ja) * | 2002-02-13 | 2003-08-29 | Toshiba Corp | 半導体装置 |
US6617637B1 (en) * | 2002-11-13 | 2003-09-09 | Ememory Technology Inc. | Electrically erasable programmable logic device |
US6914825B2 (en) * | 2003-04-03 | 2005-07-05 | Ememory Technology Inc. | Semiconductor memory device having improved data retention |
JP2005175090A (ja) * | 2003-12-09 | 2005-06-30 | Toshiba Corp | 半導体メモリ装置及びその製造方法 |
US7391640B2 (en) * | 2004-12-10 | 2008-06-24 | Intel Corporation | 2-transistor floating-body dram |
US7670928B2 (en) * | 2006-06-14 | 2010-03-02 | Intel Corporation | Ultra-thin oxide bonding for S1 to S1 dual orientation bonding |
US20070296034A1 (en) * | 2006-06-26 | 2007-12-27 | Hsin-Ming Chen | Silicon-on-insulator (soi) memory device |
US7768059B2 (en) * | 2006-06-26 | 2010-08-03 | Ememory Technology Inc. | Nonvolatile single-poly memory device |
US7592209B2 (en) * | 2006-11-13 | 2009-09-22 | Intel Corporation | Integration of a floating body memory on SOI with logic transistors on bulk substrate |
US8514622B2 (en) * | 2007-11-29 | 2013-08-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
US7760548B2 (en) * | 2006-11-29 | 2010-07-20 | Yuniarto Widjaja | Semiconductor memory having both volatile and non-volatile functionality and method of operating |
KR100801707B1 (ko) * | 2006-12-13 | 2008-02-11 | 삼성전자주식회사 | 플로팅 바디 메모리 및 그 제조방법 |
US9230651B2 (en) * | 2012-04-08 | 2016-01-05 | Zeno Semiconductor, Inc. | Memory device having electrically floating body transitor |
JP2008300520A (ja) * | 2007-05-30 | 2008-12-11 | Ricoh Co Ltd | 半導体装置 |
US8085594B2 (en) * | 2007-06-01 | 2011-12-27 | Micron Technology, Inc. | Reading technique for memory cell with electrically floating body transistor |
US7847338B2 (en) * | 2007-10-24 | 2010-12-07 | Yuniarto Widjaja | Semiconductor memory having both volatile and non-volatile functionality and method of operating |
US8536628B2 (en) * | 2007-11-29 | 2013-09-17 | Micron Technology, Inc. | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
JP2011009454A (ja) * | 2009-06-25 | 2011-01-13 | Renesas Electronics Corp | 半導体装置 |
IT1397228B1 (it) * | 2009-12-30 | 2013-01-04 | St Microelectronics Srl | Dispositivo di memoria con singolo transistore di selezione |
US8582359B2 (en) * | 2010-11-16 | 2013-11-12 | Zeno Semiconductor, Inc. | Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor |
US8835900B2 (en) * | 2011-06-07 | 2014-09-16 | International Business Machines Corporation | Highly scaled ETSOI floating body memory and memory circuit |
US8658495B2 (en) * | 2012-03-08 | 2014-02-25 | Ememory Technology Inc. | Method of fabricating erasable programmable single-poly nonvolatile memory |
-
2012
- 2012-05-09 FR FR1254236A patent/FR2990553B1/fr active Active
-
2013
- 2013-05-08 US US14/396,665 patent/US20150145049A1/en not_active Abandoned
- 2013-05-08 WO PCT/EP2013/059651 patent/WO2013167691A1/fr active Application Filing
- 2013-05-08 CN CN201380024974.7A patent/CN104321872B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN104321872B (zh) | 2017-10-31 |
CN104321872A (zh) | 2015-01-28 |
WO2013167691A1 (fr) | 2013-11-14 |
FR2990553A1 (fr) | 2013-11-15 |
US20150145049A1 (en) | 2015-05-28 |
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Legal Events
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PLFP | Fee payment |
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