KR100245179B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100245179B1
KR100245179B1 KR1019970010206A KR19970010206A KR100245179B1 KR 100245179 B1 KR100245179 B1 KR 100245179B1 KR 1019970010206 A KR1019970010206 A KR 1019970010206A KR 19970010206 A KR19970010206 A KR 19970010206A KR 100245179 B1 KR100245179 B1 KR 100245179B1
Authority
KR
South Korea
Prior art keywords
potential
transistor
word
word driver
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019970010206A
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English (en)
Korean (ko)
Other versions
KR19980032066A (ko
Inventor
사토시 에토
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19980032066A publication Critical patent/KR19980032066A/ko
Application granted granted Critical
Publication of KR100245179B1 publication Critical patent/KR100245179B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019970010206A 1996-10-08 1997-03-25 반도체 기억 장치 Expired - Lifetime KR100245179B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-267277 1996-10-08
JP8267277A JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR19980032066A KR19980032066A (ko) 1998-07-25
KR100245179B1 true KR100245179B1 (ko) 2000-02-15

Family

ID=17442609

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970010206A Expired - Lifetime KR100245179B1 (ko) 1996-10-08 1997-03-25 반도체 기억 장치

Country Status (4)

Country Link
US (1) US5982701A (enExample)
JP (1) JPH10112181A (enExample)
KR (1) KR100245179B1 (enExample)
TW (1) TW325571B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045361A (ko) * 1998-12-30 2000-07-15 김영환 워드라인 구동장치
US6198670B1 (en) * 1999-06-22 2001-03-06 Micron Technology, Inc. Bias generator for a four transistor load less memory cell
JP3948183B2 (ja) * 2000-02-24 2007-07-25 富士通株式会社 半導体記憶装置
KR100655279B1 (ko) 2000-12-14 2006-12-08 삼성전자주식회사 불휘발성 반도체 메모리 장치
US6785186B2 (en) * 2002-08-21 2004-08-31 Micron Technology, Inc. Design of an high speed xdecoder driving a large wordline load consuming less switching current for use in high speed syncflash memory
US7301849B2 (en) * 2003-07-11 2007-11-27 Texas Instruments Incorporated System for reducing row periphery power consumption in memory devices
JP5151106B2 (ja) * 2006-09-27 2013-02-27 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP2008135099A (ja) 2006-11-27 2008-06-12 Elpida Memory Inc 半導体記憶装置
JP4962206B2 (ja) * 2007-08-10 2012-06-27 富士通セミコンダクター株式会社 半導体記憶装置及びワードデコーダ制御方法
KR100968155B1 (ko) * 2008-10-02 2010-07-06 주식회사 하이닉스반도체 반도체 메모리 장치
FR2959057B1 (fr) * 2010-04-20 2012-07-20 St Microelectronics Crolles 2 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.
KR20160149845A (ko) * 2015-06-19 2016-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008722B1 (ko) * 1991-12-04 1994-09-26 삼성전자 주식회사 반도체 메모리 장치의 워드라인 드라이버 배열방법
JPH0684354A (ja) * 1992-05-26 1994-03-25 Nec Corp 行デコーダ回路
JP2842181B2 (ja) * 1993-11-04 1998-12-24 日本電気株式会社 半導体メモリ装置
JP3636233B2 (ja) * 1995-12-27 2005-04-06 富士通株式会社 ワードドライバ回路及びそれを利用したメモリ回路

Also Published As

Publication number Publication date
JPH10112181A (ja) 1998-04-28
US5982701A (en) 1999-11-09
TW325571B (en) 1998-01-21
KR19980032066A (ko) 1998-07-25

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