JPH10112181A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH10112181A
JPH10112181A JP8267277A JP26727796A JPH10112181A JP H10112181 A JPH10112181 A JP H10112181A JP 8267277 A JP8267277 A JP 8267277A JP 26727796 A JP26727796 A JP 26727796A JP H10112181 A JPH10112181 A JP H10112181A
Authority
JP
Japan
Prior art keywords
potential
word
transistor
semiconductor memory
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8267277A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10112181A5 (enExample
Inventor
Satoshi Eto
聡 江渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8267277A priority Critical patent/JPH10112181A/ja
Priority to US08/822,981 priority patent/US5982701A/en
Priority to KR1019970010206A priority patent/KR100245179B1/ko
Priority to TW086104683A priority patent/TW325571B/zh
Publication of JPH10112181A publication Critical patent/JPH10112181A/ja
Publication of JPH10112181A5 publication Critical patent/JPH10112181A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP8267277A 1996-10-08 1996-10-08 半導体記憶装置 Pending JPH10112181A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8267277A JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置
US08/822,981 US5982701A (en) 1996-10-08 1997-03-21 Semiconductor memory device with reduced inter-band tunnel current
KR1019970010206A KR100245179B1 (ko) 1996-10-08 1997-03-25 반도체 기억 장치
TW086104683A TW325571B (en) 1996-10-08 1997-04-11 Semiconductor memory device with reduced inter-band tunnel current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8267277A JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10112181A true JPH10112181A (ja) 1998-04-28
JPH10112181A5 JPH10112181A5 (enExample) 2004-08-26

Family

ID=17442609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8267277A Pending JPH10112181A (ja) 1996-10-08 1996-10-08 半導体記憶装置

Country Status (4)

Country Link
US (1) US5982701A (enExample)
JP (1) JPH10112181A (enExample)
KR (1) KR100245179B1 (enExample)
TW (1) TW325571B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045361A (ko) * 1998-12-30 2000-07-15 김영환 워드라인 구동장치
JP2008084428A (ja) * 2006-09-27 2008-04-10 Fujitsu Ltd 半導体メモリおよびシステム
JP2009043373A (ja) * 2007-08-10 2009-02-26 Fujitsu Microelectronics Ltd 半導体記憶装置及びワードデコーダ制御方法
US7626862B2 (en) 2006-11-27 2009-12-01 Elpida Memory, Inc. Semiconductor memory device
JP2010086645A (ja) * 2008-10-02 2010-04-15 Hynix Semiconductor Inc 半導体メモリー装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198670B1 (en) * 1999-06-22 2001-03-06 Micron Technology, Inc. Bias generator for a four transistor load less memory cell
JP3948183B2 (ja) * 2000-02-24 2007-07-25 富士通株式会社 半導体記憶装置
KR100655279B1 (ko) 2000-12-14 2006-12-08 삼성전자주식회사 불휘발성 반도체 메모리 장치
US6785186B2 (en) * 2002-08-21 2004-08-31 Micron Technology, Inc. Design of an high speed xdecoder driving a large wordline load consuming less switching current for use in high speed syncflash memory
US7301849B2 (en) * 2003-07-11 2007-11-27 Texas Instruments Incorporated System for reducing row periphery power consumption in memory devices
FR2959057B1 (fr) * 2010-04-20 2012-07-20 St Microelectronics Crolles 2 Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots.
KR20160149845A (ko) * 2015-06-19 2016-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008722B1 (ko) * 1991-12-04 1994-09-26 삼성전자 주식회사 반도체 메모리 장치의 워드라인 드라이버 배열방법
JPH0684354A (ja) * 1992-05-26 1994-03-25 Nec Corp 行デコーダ回路
JP2842181B2 (ja) * 1993-11-04 1998-12-24 日本電気株式会社 半導体メモリ装置
JP3636233B2 (ja) * 1995-12-27 2005-04-06 富士通株式会社 ワードドライバ回路及びそれを利用したメモリ回路

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045361A (ko) * 1998-12-30 2000-07-15 김영환 워드라인 구동장치
JP2008084428A (ja) * 2006-09-27 2008-04-10 Fujitsu Ltd 半導体メモリおよびシステム
US7626862B2 (en) 2006-11-27 2009-12-01 Elpida Memory, Inc. Semiconductor memory device
JP2009043373A (ja) * 2007-08-10 2009-02-26 Fujitsu Microelectronics Ltd 半導体記憶装置及びワードデコーダ制御方法
JP2010086645A (ja) * 2008-10-02 2010-04-15 Hynix Semiconductor Inc 半導体メモリー装置

Also Published As

Publication number Publication date
KR100245179B1 (ko) 2000-02-15
US5982701A (en) 1999-11-09
TW325571B (en) 1998-01-21
KR19980032066A (ko) 1998-07-25

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