JPH07506616A - エッチング液組成物 - Google Patents
エッチング液組成物Info
- Publication number
- JPH07506616A JPH07506616A JP5520011A JP52001193A JPH07506616A JP H07506616 A JPH07506616 A JP H07506616A JP 5520011 A JP5520011 A JP 5520011A JP 52001193 A JP52001193 A JP 52001193A JP H07506616 A JPH07506616 A JP H07506616A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- etching
- composition
- liquid composition
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 title claims abstract description 37
- 239000007788 liquid Substances 0.000 title claims description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 27
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- LTHNHFOGQMKPOV-UHFFFAOYSA-N 2-ethylhexan-1-amine Chemical compound CCCCC(CC)CN LTHNHFOGQMKPOV-UHFFFAOYSA-N 0.000 claims description 6
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 claims description 6
- -1 aliphatic amines Chemical class 0.000 claims description 6
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- HBXNJMZWGSCKPW-UHFFFAOYSA-N octan-2-amine Chemical compound CCCCCCC(C)N HBXNJMZWGSCKPW-UHFFFAOYSA-N 0.000 claims description 3
- 150000003512 tertiary amines Chemical class 0.000 claims description 3
- 150000003335 secondary amines Chemical class 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 150000003141 primary amines Chemical class 0.000 claims 1
- 238000005187 foaming Methods 0.000 abstract description 11
- 238000001914 filtration Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QNIVIMYXGGFTAK-UHFFFAOYSA-N octodrine Chemical compound CC(C)CCCC(C)N QNIVIMYXGGFTAK-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000003134 recirculating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PBRXWVWVEZDPSE-UHFFFAOYSA-N 4-ethylhexan-1-amine Chemical compound CCC(CC)CCCN PBRXWVWVEZDPSE-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 102220491117 Putative postmeiotic segregation increased 2-like protein 1_C23F_mutation Human genes 0.000 description 1
- FRYDSOYOHWGSMD-UHFFFAOYSA-N [C].O Chemical compound [C].O FRYDSOYOHWGSMD-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- IUGWGXFPZIEWAO-UHFFFAOYSA-N dodecan-3-amine Chemical compound CCCCCCCCCC(N)CC IUGWGXFPZIEWAO-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- YWFWDNVOPHGWMX-UHFFFAOYSA-N n,n-dimethyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(C)C YWFWDNVOPHGWMX-UHFFFAOYSA-N 0.000 description 1
- WSTNFGAKGUERTC-UHFFFAOYSA-N n-ethylhexan-1-amine Chemical compound CCCCCCNCC WSTNFGAKGUERTC-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- VSRBKQFNFZQRBM-UHFFFAOYSA-N tuaminoheptane Chemical group CCCCCC(C)N VSRBKQFNFZQRBM-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Abstract
Description
Claims (14)
- 1.少なくとも1種の酸および界面活性剤を含有する半導体装置をエッチングし 洗浄する液状組成物において、一範式CmH2m+3N(ここにmは7〜10の 範囲の整数)を有する有枝鎖状脂肪族アミンを100〜2000ppm含有する ことを特徴とする組成物。
- 2.組成物が150〜1500ppmの界面活性剤を含有する請求の範囲第1項 記載の液状組成物。
- 3.組成物が250〜1600ppmの界面活性剤を含有する請求の範囲第1項 または第2項記載の液状組成物。
- 4.組成物が250〜1200ppmの界面活性剤を含有する請求の範囲第1項 から第3項までのいずれか1項に記載の液状組成物。
- 5.有枝鎖状脂肪族アミンが一般式C8H19Nを有する第1級、第2級または 第3級アミンである、請求の範囲第1項から第4項までのいずれか1項に記載の 液状組成物。
- 6.有枝鎖状脂肪族アミンが1−メチルヘプチルアミン、2−エチルヘキシルア ミン、ジブチルアミンまたはN,N−ジイソプロピルエチルアミンあるいはこれ らの混合物である、請求の範囲第5項に記載の液状組成物。
- 7.15〜40重量%のフッ化アンモニウムおよび0.5〜11重量%のフッ化 水素を含有する、請求の範囲第1項から第6項までのいずれか1項に記載の半導 体装置をエッチングし洗浄する液状組成物。
- 8.60〜80重量%のリン酸、および必要に応じ6重量%までの硝酸、15重 量%までの酢酸および5重量%までのフッ化水素酸の1種または1種以上を含有 する、請求の範囲第1項から第6項までのいずれか1項に記載の半導体装置をエ ッチングし洗浄する液状組成物。
- 9.15〜75重量%のフッ化アンモニウム、10〜35重量%の酢酸および必 要に応じ5重量%までのフッ化水素酸を含有する、請求の範囲第1項から第6項 までのいずれか1項に記載の半導体装置をエッチングし洗浄する液状組成物。
- 10.液状酸性エッチング組成物中の界面活性剤として、一般式CmH2m+3 N(ここにmは7〜10の範囲の整数)を有する有枝鎖状脂肪族アミンを使用す ること。
- 11.有枝鎖状脂肪族アミンが一般式C8H19Nを有する第1級、第2級また は第3級アミンである、請求の範囲第10項に記載の使用。
- 12.有枝鎖状脂肪族アミンが1−メチルヘプチルアミン、2−エチルヘキシル アミン、ジブチルアミンまたはN,N−ジイソプロピルエチルアミンあるいはこ れらの混合物である、請求の範囲第11項に記載の使用。
- 13.エッチング組成物の重量にもとづいて界面活性剤が100〜2000pp m用いられる、請求の範囲第10項から第12項までのいずれか1項に記載の使 用。
- 14.エッチング組成物が、 (a)15〜40重量%のフッ化アンモニウムおよび0.5〜11重量%のフッ 化水素: (b)60〜80重量%のリン酸、および必要に応じ1または1以上の6重量% までの硝酸、15重量%までの酢酸、5重量%までのフッ化水素酸;または(c )15〜75重量%のフッ化アンモニウム、10〜35重量%の酢酸、および必 要に応じ5重量%までのフッ化水素酸、を含有する請求の範囲第10項ないし第 13項のいずれか1項に記載の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9210514.7 | 1992-05-16 | ||
GB929210514A GB9210514D0 (en) | 1992-05-16 | 1992-05-16 | Etching compositions |
PCT/GB1993/001003 WO1993023493A1 (en) | 1992-05-16 | 1993-05-17 | Etching compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07506616A true JPH07506616A (ja) | 1995-07-20 |
JP3630168B2 JP3630168B2 (ja) | 2005-03-16 |
Family
ID=10715607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52001193A Expired - Fee Related JP3630168B2 (ja) | 1992-05-16 | 1993-05-17 | エッチング液組成物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5496485A (ja) |
EP (1) | EP0640120B1 (ja) |
JP (1) | JP3630168B2 (ja) |
KR (1) | KR950701671A (ja) |
AT (1) | ATE171979T1 (ja) |
DE (1) | DE69321465T2 (ja) |
GB (1) | GB9210514D0 (ja) |
WO (1) | WO1993023493A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998009320A1 (fr) * | 1996-08-28 | 1998-03-05 | Stella Chemifa Kabushiki Kaisha | Traitement de surface pour micro-usinage |
WO1998027579A1 (fr) * | 1996-12-18 | 1998-06-25 | Stella Chemifa Kabushiki Kaisha | Agents de gravure |
WO1999044227A1 (fr) * | 1998-02-27 | 1999-09-02 | Stella Chemifa Kabushiki Kaisha | Agent de traitement de surface pour micro-usinage et procede de traitement de surface |
JP2006083376A (ja) * | 2004-08-18 | 2006-03-30 | Mitsubishi Gas Chem Co Inc | 洗浄液および洗浄法。 |
WO2010113616A1 (ja) * | 2009-03-31 | 2010-10-07 | ダイキン工業株式会社 | エッチング液 |
US7928446B2 (en) | 2007-07-19 | 2011-04-19 | Mitsubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
TWI507508B (zh) * | 2009-05-22 | 2015-11-11 | Stella Chemifa Corp | Micro-processing agent, and micro-processing methods |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5695661A (en) * | 1995-06-07 | 1997-12-09 | Micron Display Technology, Inc. | Silicon dioxide etch process which protects metal |
US5843322A (en) * | 1996-12-23 | 1998-12-01 | Memc Electronic Materials, Inc. | Process for etching N, P, N+ and P+ type slugs and wafers |
US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
KR100464305B1 (ko) * | 1998-07-07 | 2005-04-13 | 삼성전자주식회사 | 에챈트를이용한pzt박막의청소방법 |
US6242165B1 (en) | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
DE19843552A1 (de) * | 1998-09-23 | 2000-03-30 | Bayer Ag | Wäßrige Dispersionen mit reduziertem Gehalt an Triethylamin |
US6453914B2 (en) | 1999-06-29 | 2002-09-24 | Micron Technology, Inc. | Acid blend for removing etch residue |
US6562726B1 (en) | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
KR100525031B1 (ko) * | 1999-07-13 | 2005-10-31 | 카오카부시키가이샤 | 연마액 조성물 |
JP3714082B2 (ja) * | 2000-01-13 | 2005-11-09 | 株式会社村田製作所 | ランガサイト系単結晶基板の製造方法、ランガサイト系単結晶基板および圧電デバイス |
US6465358B1 (en) * | 2000-10-06 | 2002-10-15 | Intel Corporation | Post etch clean sequence for making a semiconductor device |
KR100420100B1 (ko) * | 2001-07-12 | 2004-03-04 | 삼성전자주식회사 | 알루미늄 에천트 조성물 |
US20030158057A1 (en) * | 2002-02-21 | 2003-08-21 | Kim Yeoung Ku | Cleaning material of color cathode ray tube panel and the cleaning method using the same |
US7192860B2 (en) * | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
US20030235986A1 (en) * | 2002-06-20 | 2003-12-25 | Wolfgang Sievert | Silicon oxide etching compositions with reduced water content |
DE10344351A1 (de) * | 2003-09-24 | 2005-05-19 | Infineon Technologies Ag | Verfahren zum anisotropen Ätzen von Silizium |
JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
US7241920B2 (en) * | 2004-11-09 | 2007-07-10 | General Chemical Performance Products, Llc | Filterable surfactant composition |
US7112289B2 (en) * | 2004-11-09 | 2006-09-26 | General Chemical Performance Products Llc | Etchants containing filterable surfactant |
KR100579421B1 (ko) | 2004-11-20 | 2006-05-12 | 테크노세미켐 주식회사 | 은 식각액 조성물 |
US8153019B2 (en) * | 2007-08-06 | 2012-04-10 | Micron Technology, Inc. | Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices |
EP2438140A1 (en) * | 2009-06-04 | 2012-04-11 | Merck Patent GmbH | Two component etching |
CN114072488A (zh) * | 2019-05-01 | 2022-02-18 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
KR20220020363A (ko) | 2019-06-13 | 2022-02-18 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3457107A (en) * | 1965-07-20 | 1969-07-22 | Diversey Corp | Method and composition for chemically polishing metals |
JPS5120972B1 (ja) * | 1971-05-13 | 1976-06-29 | ||
US3935118A (en) * | 1973-03-05 | 1976-01-27 | Philip A. Hunt Chemical Corporation | Nitric acid system for etching magnesium plates |
JPH062836B2 (ja) * | 1986-08-06 | 1994-01-12 | ポリプラスチックス株式会社 | ポリアセタ−ル樹脂成形品の表面処理法 |
JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
DE4101564A1 (de) * | 1991-01-21 | 1992-07-23 | Riedel De Haen Ag | Aetzloesung fuer nasschemische prozesse der halbleiterherstellung |
JP2734839B2 (ja) * | 1991-10-09 | 1998-04-02 | シャープ株式会社 | アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品 |
-
1992
- 1992-05-16 GB GB929210514A patent/GB9210514D0/en active Pending
-
1993
- 1993-05-17 JP JP52001193A patent/JP3630168B2/ja not_active Expired - Fee Related
- 1993-05-17 US US08/325,333 patent/US5496485A/en not_active Expired - Lifetime
- 1993-05-17 EP EP93910211A patent/EP0640120B1/en not_active Expired - Lifetime
- 1993-05-17 KR KR1019940704084A patent/KR950701671A/ko not_active Application Discontinuation
- 1993-05-17 AT AT93910211T patent/ATE171979T1/de active
- 1993-05-17 WO PCT/GB1993/001003 patent/WO1993023493A1/en active IP Right Grant
- 1993-05-17 DE DE69321465T patent/DE69321465T2/de not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998009320A1 (fr) * | 1996-08-28 | 1998-03-05 | Stella Chemifa Kabushiki Kaisha | Traitement de surface pour micro-usinage |
US6027571A (en) * | 1996-08-28 | 2000-02-22 | Stella Chemifa Kabushiki Kaisha | Surface treatment for micromachining |
WO1998027579A1 (fr) * | 1996-12-18 | 1998-06-25 | Stella Chemifa Kabushiki Kaisha | Agents de gravure |
US6585910B1 (en) | 1996-12-18 | 2003-07-01 | Stella Chemifa Kabushiki Kaisha | Etchant |
US6821452B2 (en) | 1996-12-18 | 2004-11-23 | Hirohisa Kikuyama | Etchant |
WO1999044227A1 (fr) * | 1998-02-27 | 1999-09-02 | Stella Chemifa Kabushiki Kaisha | Agent de traitement de surface pour micro-usinage et procede de traitement de surface |
JP2006083376A (ja) * | 2004-08-18 | 2006-03-30 | Mitsubishi Gas Chem Co Inc | 洗浄液および洗浄法。 |
US7928446B2 (en) | 2007-07-19 | 2011-04-19 | Mitsubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
US8022413B2 (en) | 2007-07-19 | 2011-09-20 | Misubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
WO2010113616A1 (ja) * | 2009-03-31 | 2010-10-07 | ダイキン工業株式会社 | エッチング液 |
JP5423788B2 (ja) * | 2009-03-31 | 2014-02-19 | ダイキン工業株式会社 | エッチング液及びその製造方法、並びに該エッチング液を用いたエッチング方法及びエッチング処理物の製造方法 |
TWI507508B (zh) * | 2009-05-22 | 2015-11-11 | Stella Chemifa Corp | Micro-processing agent, and micro-processing methods |
Also Published As
Publication number | Publication date |
---|---|
DE69321465D1 (de) | 1998-11-12 |
DE69321465T2 (de) | 1999-06-24 |
KR950701671A (ko) | 1995-04-28 |
WO1993023493A1 (en) | 1993-11-25 |
JP3630168B2 (ja) | 2005-03-16 |
GB9210514D0 (en) | 1992-07-01 |
US5496485A (en) | 1996-03-05 |
ATE171979T1 (de) | 1998-10-15 |
EP0640120A1 (en) | 1995-03-01 |
EP0640120B1 (en) | 1998-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH07506616A (ja) | エッチング液組成物 | |
KR900000739B1 (ko) | 부식제 조성물 | |
EP1576072B1 (en) | Aqueous phosphoric acid compositions for cleaning semiconductor devices | |
US6943139B2 (en) | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations | |
US5763375A (en) | Cleaning agents and cleaning method | |
JPH0317372B2 (ja) | ||
JPH0694596B2 (ja) | Nh4f/hf系の二酸化ケイ素エッチング液およびその製法 | |
JP3217116B2 (ja) | 低表面張力洗浄用組成物 | |
EP0470957A1 (en) | ETCHING SOLUTION FOR METAL LAYERS ENGRAVED BY A PHOTORESISTANT. | |
US20060040839A1 (en) | Cleaning composition and method | |
TWI276677B (en) | Process for production of etching or cleaning fluids | |
JPH0613364A (ja) | シリコンウエハーおよび半導体素子洗浄液 | |
JP2003109930A (ja) | 半導体デバイス用基板の洗浄液及び洗浄方法 | |
US7112289B2 (en) | Etchants containing filterable surfactant | |
JP3064060B2 (ja) | 微粒子の含有量の少ない微細加工表面処理剤 | |
JP3261819B2 (ja) | 低表面張力硫酸組成物 | |
JP3353359B2 (ja) | 低表面張力硫酸組成物 | |
JP2001040389A (ja) | ウエハ洗浄液 | |
CN114507529B (zh) | 一种ito蚀刻液及其制备方法、应用方法 | |
KR101758766B1 (ko) | 매거진 세정액 조성물 | |
JPH05198546A (ja) | 半導体基板の洗浄液 | |
JPH05275407A (ja) | 硫酸組成物 | |
JPH05238705A (ja) | 硫酸組成物 | |
WO2001070920A1 (en) | Cleaning compositions and use thereof | |
JPH11238725A (ja) | エッチング組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20040114 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20040301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040414 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040922 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20041109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20041208 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081224 Year of fee payment: 4 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081224 Year of fee payment: 4 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091224 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091224 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101224 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111224 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111224 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121224 Year of fee payment: 8 |
|
LAPS | Cancellation because of no payment of annual fees |