DE69321465D1 - Ätzende zusammensetzung - Google Patents

Ätzende zusammensetzung

Info

Publication number
DE69321465D1
DE69321465D1 DE69321465T DE69321465T DE69321465D1 DE 69321465 D1 DE69321465 D1 DE 69321465D1 DE 69321465 T DE69321465 T DE 69321465T DE 69321465 T DE69321465 T DE 69321465T DE 69321465 D1 DE69321465 D1 DE 69321465D1
Authority
DE
Germany
Prior art keywords
pct
sec
date
pub
date dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69321465T
Other languages
English (en)
Other versions
DE69321465T2 (de
Inventor
David Maternaghan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OM GROUP ULTRA PURE CHEMICALS LTD., LONDON, GB
Original Assignee
Micro Image Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micro Image Technology Ltd filed Critical Micro Image Technology Ltd
Application granted granted Critical
Publication of DE69321465D1 publication Critical patent/DE69321465D1/de
Publication of DE69321465T2 publication Critical patent/DE69321465T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
DE69321465T 1992-05-16 1993-05-17 Ätzende zusammensetzung Expired - Lifetime DE69321465T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB929210514A GB9210514D0 (en) 1992-05-16 1992-05-16 Etching compositions
PCT/GB1993/001003 WO1993023493A1 (en) 1992-05-16 1993-05-17 Etching compositions

Publications (2)

Publication Number Publication Date
DE69321465D1 true DE69321465D1 (de) 1998-11-12
DE69321465T2 DE69321465T2 (de) 1999-06-24

Family

ID=10715607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321465T Expired - Lifetime DE69321465T2 (de) 1992-05-16 1993-05-17 Ätzende zusammensetzung

Country Status (8)

Country Link
US (1) US5496485A (de)
EP (1) EP0640120B1 (de)
JP (1) JP3630168B2 (de)
KR (1) KR950701671A (de)
AT (1) ATE171979T1 (de)
DE (1) DE69321465T2 (de)
GB (1) GB9210514D0 (de)
WO (1) WO1993023493A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
JP3408090B2 (ja) * 1996-12-18 2003-05-19 ステラケミファ株式会社 エッチング剤
US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
TW541356B (en) * 1998-02-27 2003-07-11 Stella Chemifa Kk Surface treating agent for micromachining and method for surface treatment
KR100464305B1 (ko) * 1998-07-07 2005-04-13 삼성전자주식회사 에챈트를이용한pzt박막의청소방법
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
DE19843552A1 (de) * 1998-09-23 2000-03-30 Bayer Ag Wäßrige Dispersionen mit reduziertem Gehalt an Triethylamin
US6453914B2 (en) * 1999-06-29 2002-09-24 Micron Technology, Inc. Acid blend for removing etch residue
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
KR100525031B1 (ko) * 1999-07-13 2005-10-31 카오카부시키가이샤 연마액 조성물
JP3714082B2 (ja) * 2000-01-13 2005-11-09 株式会社村田製作所 ランガサイト系単結晶基板の製造方法、ランガサイト系単結晶基板および圧電デバイス
US6465358B1 (en) * 2000-10-06 2002-10-15 Intel Corporation Post etch clean sequence for making a semiconductor device
KR100420100B1 (ko) * 2001-07-12 2004-03-04 삼성전자주식회사 알루미늄 에천트 조성물
US20030158057A1 (en) * 2002-02-21 2003-08-21 Kim Yeoung Ku Cleaning material of color cathode ray tube panel and the cleaning method using the same
US20030235986A1 (en) * 2002-06-20 2003-12-25 Wolfgang Sievert Silicon oxide etching compositions with reduced water content
US7192860B2 (en) * 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
DE10344351A1 (de) * 2003-09-24 2005-05-19 Infineon Technologies Ag Verfahren zum anisotropen Ätzen von Silizium
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
JP4810928B2 (ja) * 2004-08-18 2011-11-09 三菱瓦斯化学株式会社 洗浄液および洗浄法。
US7241920B2 (en) * 2004-11-09 2007-07-10 General Chemical Performance Products, Llc Filterable surfactant composition
US7112289B2 (en) * 2004-11-09 2006-09-26 General Chemical Performance Products Llc Etchants containing filterable surfactant
KR100579421B1 (ko) 2004-11-20 2006-05-12 테크노세미켐 주식회사 은 식각액 조성물
JP5493302B2 (ja) 2007-07-19 2014-05-14 三菱化学株式会社 Ｉｉｉ族窒化物半導体基板およびその洗浄方法
US8153019B2 (en) * 2007-08-06 2012-04-10 Micron Technology, Inc. Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
CN102379028B (zh) * 2009-03-31 2016-03-02 大金工业株式会社 蚀刻液
TWI507508B (zh) * 2009-05-22 2015-11-11 Stella Chemifa Corp Micro-processing agent, and micro-processing methods
WO2010139390A1 (en) * 2009-06-04 2010-12-09 Merck Patent Gmbh Two component etching
SG11202111994PA (en) * 2019-05-01 2021-11-29 Fujifilm Electronic Materials U S A Inc Etching compositions
US11268025B2 (en) 2019-06-13 2022-03-08 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
JPS5120972B1 (de) * 1971-05-13 1976-06-29
US3935118A (en) * 1973-03-05 1976-01-27 Philip A. Hunt Chemical Corporation Nitric acid system for etching magnesium plates
JPH062836B2 (ja) * 1986-08-06 1994-01-12 ポリプラスチックス株式会社 ポリアセタ−ル樹脂成形品の表面処理法
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
DE4101564A1 (de) * 1991-01-21 1992-07-23 Riedel De Haen Ag Aetzloesung fuer nasschemische prozesse der halbleiterherstellung
JP2734839B2 (ja) * 1991-10-09 1998-04-02 シャープ株式会社 アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品

Also Published As

Publication number Publication date
KR950701671A (ko) 1995-04-28
JP3630168B2 (ja) 2005-03-16
DE69321465T2 (de) 1999-06-24
EP0640120A1 (de) 1995-03-01
ATE171979T1 (de) 1998-10-15
US5496485A (en) 1996-03-05
EP0640120B1 (de) 1998-10-07
JPH07506616A (ja) 1995-07-20
GB9210514D0 (en) 1992-07-01
WO1993023493A1 (en) 1993-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOETERS & LIECK, 81541 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: OM GROUP ULTRA PURE CHEMICALS LTD., LONDON, GB

8328 Change in the person/name/address of the agent

Representative=s name: MURGITROYD & COMPANY, 48149 MUENSTER