JPH07105146B2 - 不揮発性記憶装置 - Google Patents

不揮発性記憶装置

Info

Publication number
JPH07105146B2
JPH07105146B2 JP19138288A JP19138288A JPH07105146B2 JP H07105146 B2 JPH07105146 B2 JP H07105146B2 JP 19138288 A JP19138288 A JP 19138288A JP 19138288 A JP19138288 A JP 19138288A JP H07105146 B2 JPH07105146 B2 JP H07105146B2
Authority
JP
Japan
Prior art keywords
transistor
circuit
memory
gate
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19138288A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0240198A (ja
Inventor
健二 野口
真一 小林
毅 外山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19138288A priority Critical patent/JPH07105146B2/ja
Priority to US07/386,484 priority patent/US5262984A/en
Priority to KR1019890010763A priority patent/KR930004626B1/ko
Priority to DE3925153A priority patent/DE3925153A1/de
Publication of JPH0240198A publication Critical patent/JPH0240198A/ja
Publication of JPH07105146B2 publication Critical patent/JPH07105146B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP19138288A 1988-07-29 1988-07-29 不揮発性記憶装置 Expired - Lifetime JPH07105146B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP19138288A JPH07105146B2 (ja) 1988-07-29 1988-07-29 不揮発性記憶装置
US07/386,484 US5262984A (en) 1988-07-29 1989-07-28 Non-volatile memory device capable of storing multi-state data
KR1019890010763A KR930004626B1 (ko) 1988-07-29 1989-07-28 불휘발성 기억장치
DE3925153A DE3925153A1 (de) 1988-07-29 1989-07-28 Permanentspeicher zur speicherung von mehr-zustands-daten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19138288A JPH07105146B2 (ja) 1988-07-29 1988-07-29 不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPH0240198A JPH0240198A (ja) 1990-02-08
JPH07105146B2 true JPH07105146B2 (ja) 1995-11-13

Family

ID=16273665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19138288A Expired - Lifetime JPH07105146B2 (ja) 1988-07-29 1988-07-29 不揮発性記憶装置

Country Status (4)

Country Link
US (1) US5262984A (enExample)
JP (1) JPH07105146B2 (enExample)
KR (1) KR930004626B1 (enExample)
DE (1) DE3925153A1 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296266A (ja) * 1990-04-13 1991-12-26 Seikosha Co Ltd 記憶回路および記憶制御装置
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5541878A (en) * 1991-05-09 1996-07-30 Synaptics, Incorporated Writable analog reference voltage storage device
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JP2822791B2 (ja) * 1992-06-30 1998-11-11 日本電気株式会社 半導体装置
US5359896A (en) * 1992-09-03 1994-11-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Acceleration recorder and playback module
JPH06318683A (ja) * 1993-05-01 1994-11-15 Toshiba Corp 半導体記憶装置及びその製造方法
US5432735A (en) * 1993-07-08 1995-07-11 Dellusa, L.P. Ternary storage dynamic RAM
US5887145A (en) * 1993-09-01 1999-03-23 Sandisk Corporation Removable mother/daughter peripheral card
US7137011B1 (en) * 1993-09-01 2006-11-14 Sandisk Corporation Removable mother/daughter peripheral card
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
WO1995034075A1 (en) * 1994-06-02 1995-12-14 Intel Corporation Sensing schemes for flash memory with multilevel cells
US5497354A (en) * 1994-06-02 1996-03-05 Intel Corporation Bit map addressing schemes for flash memory
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
JP3563452B2 (ja) * 1994-08-10 2004-09-08 株式会社東芝 セル閾値分布検知回路およびセル閾値分布検知方法
US5469384A (en) * 1994-09-27 1995-11-21 Cypress Semiconductor Corp. Decoding scheme for reliable multi bit hot electron programming
KR970005645B1 (ko) * 1994-10-01 1997-04-18 삼성전자 주식회사 불휘발성 반도체 메모리의 부분 프로그램을 위한 데이터 로딩회로
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
FR2728380A1 (fr) * 1994-12-20 1996-06-21 Sgs Thomson Microelectronics Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante
JP2629626B2 (ja) * 1994-12-26 1997-07-09 日本電気株式会社 半導体記憶装置およびその製造方法
KR100477034B1 (ko) 1995-01-31 2005-03-21 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
ATE218003T1 (de) * 1995-02-10 2002-06-15 Micron Technology Inc Schneller leseverstärker für einen flash-speicher
US5682496A (en) 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP2768321B2 (ja) * 1995-02-28 1998-06-25 日本電気株式会社 半導体記憶装置
KR0152914B1 (ko) * 1995-04-21 1998-12-01 문정환 반도체 메모리장치
EP0764952B1 (en) * 1995-07-25 2003-02-05 Texas Instruments Incorporated An apparatus and method for a data path implemented using non-differential current mode techniques
US5572462A (en) * 1995-08-02 1996-11-05 Aplus Integrated Circuits, Inc. Multistate prom and decompressor
US5625584A (en) * 1995-08-31 1997-04-29 Sanyo Electric Co., Ltd. Non-volatile multi-state memory device with memory cell capable of storing multi-state data
US5815434A (en) * 1995-09-29 1998-09-29 Intel Corporation Multiple writes per a single erase for a nonvolatile memory
KR0161867B1 (ko) * 1995-10-11 1998-12-01 문정환 반도체 소자의 가변 문턱전압 조절회로
US5701266A (en) * 1995-12-14 1997-12-23 Intel Corporation Programming flash memory using distributed learning methods
US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
US5677869A (en) * 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
US5737265A (en) * 1995-12-14 1998-04-07 Intel Corporation Programming flash memory using data stream analysis
US5663925A (en) * 1995-12-18 1997-09-02 Micron Technology, Inc. Method and apparatus for timing control in a memory device
US5680341A (en) * 1996-01-16 1997-10-21 Invoice Technology Pipelined record and playback for analog non-volatile memory
JP3740212B2 (ja) 1996-05-01 2006-02-01 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100223868B1 (ko) * 1996-07-12 1999-10-15 구본준 비휘발성 메모리를 프로그램하는 방법
EP1262994B1 (en) * 1996-07-25 2005-03-30 Texas Instruments Incorporated An apparatus and method for a data path implemented using non-differential current mode techniques
EP0825611B1 (en) * 1996-08-22 2003-04-09 STMicroelectronics S.r.l. Multilevel non-volatile memory devices
FR2754100B1 (fr) * 1996-09-30 1998-11-20 Sgs Thomson Microelectronics Memoire a acces serie avec securisation de l'ecriture
JP3204119B2 (ja) * 1996-09-30 2001-09-04 日本電気株式会社 不揮発性半導体メモリおよびそのデータ書込方法
US6081453A (en) * 1997-04-15 2000-06-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5847991A (en) * 1997-05-20 1998-12-08 Tong; Hing S. System for recording voice as analog values programmed into single bit cells EEPROMs or flash EEPROM
JP3602294B2 (ja) * 1997-05-28 2004-12-15 株式会社ルネサステクノロジ 半導体メモリおよび情報記憶装置
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US5910914A (en) * 1997-11-07 1999-06-08 Silicon Storage Technology, Inc. Sensing circuit for a floating gate memory device having multiple levels of storage in a cell
KR100266748B1 (ko) 1997-12-31 2000-10-02 윤종용 반도체 메모리 장치 및 그 장치의 에러 정정 방법
US6606267B2 (en) * 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US5969986A (en) * 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
EP0971361B1 (en) 1998-06-23 2003-12-10 SanDisk Corporation High data rate write process for non-volatile flash memories
KR100299872B1 (ko) * 1998-06-29 2001-10-27 박종섭 다비트데이터기록제어회로
FR2786910B1 (fr) * 1998-12-04 2002-11-29 St Microelectronics Sa Memoire a grille flottante multiniveau
US6269017B1 (en) 1999-03-04 2001-07-31 Macronix International Co., Ltd. Multi level mask ROM with single current path
US6335698B1 (en) 1999-10-08 2002-01-01 Industrial Technology Research Institute Programmable analog-to-digital converter with programmable non-volatile memory cells
US6363008B1 (en) 2000-02-17 2002-03-26 Multi Level Memory Technology Multi-bit-cell non-volatile memory with maximized data capacity
US6707713B1 (en) * 2000-03-01 2004-03-16 Advanced Micro Devices, Inc. Interlaced multi-level memory
EP1193715A1 (en) * 2000-09-20 2002-04-03 STMicroelectronics S.r.l. Nonvolatile memory device, having parts with different access time, reliability and capacity
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
US6909985B2 (en) * 2002-11-27 2005-06-21 Lockheed Martin Corporation Method and apparatus for recording changes associated with acceleration of a structure
JP4667719B2 (ja) * 2003-01-17 2011-04-13 スパンション エルエルシー 不揮発性多値半導体メモリ
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US6963506B1 (en) * 2003-10-03 2005-11-08 Advanced Micro Devices, Inc. Circuit and technique for accurately sensing low voltage flash memory devices
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7315916B2 (en) 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
KR100602320B1 (ko) * 2005-05-03 2006-07-18 주식회사 하이닉스반도체 프로그램 속도가 균일한 비휘발성 메모리 소자
WO2006127959A2 (en) * 2005-05-25 2006-11-30 Thunder Creative Technologies, Inc. Control signal interface circuit for computer memory modules
US7886204B2 (en) 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
JP5384012B2 (ja) * 2008-01-24 2014-01-08 ローム株式会社 Ｅｅｐｒｏｍおよびそれを用いた電子機器
CN102498475A (zh) * 2009-07-10 2012-06-13 柰米闪芯积体电路有限公司 高速高密度以nand为基础的双晶体管-nor闪存的新构成
JP2011170942A (ja) * 2010-02-22 2011-09-01 Elpida Memory Inc 半導体装置
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9577854B1 (en) 2015-08-20 2017-02-21 Micron Technology, Inc. Apparatuses and methods for asymmetric bi-directional signaling incorporating multi-level encoding
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US10164817B2 (en) 2017-03-21 2018-12-25 Micron Technology, Inc. Methods and apparatuses for signal translation in a buffered memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449203A (en) * 1981-02-25 1984-05-15 Motorola, Inc. Memory with reference voltage generator
JPS5886777A (ja) * 1981-11-18 1983-05-24 Citizen Watch Co Ltd Ｍｎｏｓ記憶素子のしきい値電圧の設定方法
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
JPS5942697A (ja) * 1982-09-01 1984-03-09 Sanyo Electric Co Ltd 不揮発性アナログメモリ装置
US4771404A (en) * 1984-09-05 1988-09-13 Nippon Telegraph And Telephone Corporation Memory device employing multilevel storage circuits
JPS63153799A (ja) * 1986-08-08 1988-06-27 Nec Corp 半導体メモリ
JPS6342100A (ja) * 1986-08-08 1988-02-23 Fujitsu Ltd ３値レベルｒｏｍ
FR2630573B1 (fr) * 1988-04-26 1990-07-13 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques

Also Published As

Publication number Publication date
JPH0240198A (ja) 1990-02-08
KR930004626B1 (ko) 1993-06-02
KR910003659A (ko) 1991-02-28
DE3925153A1 (de) 1990-02-01
US5262984A (en) 1993-11-16
DE3925153C2 (enExample) 1992-11-05

Similar Documents

Publication Publication Date Title
JPH07105146B2 (ja) 不揮発性記憶装置
KR100259972B1 (ko) 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
US11631460B2 (en) Sequential write and sequential write verify in memory device
KR100256616B1 (ko) 불휘발성 반도체 기억장치
EP0255963B1 (en) Nonvolatile semiconductor memory including means for detecting completion of writing operation
KR100589928B1 (ko) 다중 레벨 데이터를 저장하는 비휘발성 메모리
JP3397600B2 (ja) 不揮発性半導体記憶装置
EP0558404A2 (en) Single transistor flash electrically programmable memory
US8593876B2 (en) Sensing scheme in a memory device
JPS6013398A (ja) 半導体多値記憶装置
US6477092B2 (en) Level shifter of nonvolatile semiconductor memory
KR100204803B1 (ko) 단일 비트셀 및 다중비트셀 동작의 동시적인 수행이 가능한 불휘발성 반도체 메모리 장치
JPH1011981A (ja) 不揮発性半導体記憶装置
JPH0935488A (ja) 不揮発性記憶装置
JPH0982097A (ja) 半導体不揮発性記憶装置およびそれを用いたコンピュータシステム
KR20090079657A (ko) 안정적인 워드라인 전압을 발생할 수 있는 플래시 메모리장치
US5153854A (en) EEPROM memory system having selectable programming voltage for low power readability
JP3983940B2 (ja) 不揮発性半導体メモリ
JP3935592B2 (ja) 内部電位発生回路
EP1065669A2 (en) High-density NOR-type flash memory device and programming method therefor
JP3103457B2 (ja) 不揮発性半導体記憶装置及びその書き込み方法ならびに読み出し方法
JP2918723B2 (ja) 半導体記憶装置
JPH04192196A (ja) 不揮発性半導体記憶装置
JP3169457B2 (ja) 半導体メモリ装置
JPH03288400A (ja) 不揮発性半導体記憶装置