JPH0573252B2 - - Google Patents

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Publication number
JPH0573252B2
JPH0573252B2 JP62021126A JP2112687A JPH0573252B2 JP H0573252 B2 JPH0573252 B2 JP H0573252B2 JP 62021126 A JP62021126 A JP 62021126A JP 2112687 A JP2112687 A JP 2112687A JP H0573252 B2 JPH0573252 B2 JP H0573252B2
Authority
JP
Japan
Prior art keywords
sapphire substrate
thin film
plane
reaction gas
gas pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62021126A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63188938A (ja
Inventor
Katsuhide Manabe
Nobuo Okazaki
Isamu Akasaki
Kazumasa Hiramatsu
Hiroshi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP62021126A priority Critical patent/JPS63188938A/ja
Priority to EP91113265A priority patent/EP0460710B1/en
Priority to DE3852402T priority patent/DE3852402T2/de
Priority to EP88101267A priority patent/EP0277597B1/en
Priority to DE3850582T priority patent/DE3850582T2/de
Publication of JPS63188938A publication Critical patent/JPS63188938A/ja
Priority to US07/811,899 priority patent/US5218216A/en
Publication of JPH0573252B2 publication Critical patent/JPH0573252B2/ja
Granted legal-status Critical Current

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  • Led Devices (AREA)
JP62021126A 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法 Granted JPS63188938A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62021126A JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法
EP91113265A EP0460710B1 (en) 1987-01-31 1988-01-28 Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same
DE3852402T DE3852402T2 (de) 1987-01-31 1988-01-28 Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung.
EP88101267A EP0277597B1 (en) 1987-01-31 1988-01-28 Gallium nitride group semiconductor light emitting diode and the process of producing the same
DE3850582T DE3850582T2 (de) 1987-01-31 1988-01-28 Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung.
US07/811,899 US5218216A (en) 1987-01-31 1991-12-20 Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62021126A JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法

Publications (2)

Publication Number Publication Date
JPS63188938A JPS63188938A (ja) 1988-08-04
JPH0573252B2 true JPH0573252B2 (enExample) 1993-10-14

Family

ID=12046193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62021126A Granted JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法

Country Status (1)

Country Link
JP (1) JPS63188938A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
WO2010092972A1 (ja) 2009-02-13 2010-08-19 電気化学工業株式会社 Ｌｅｄ発光素子用複合材料基板、その製造方法及びｌｅｄ発光素子
WO2011013754A1 (ja) 2009-07-31 2011-02-03 電気化学工業株式会社 Ｌｅｄ搭載用ウエハとその製造方法、及びそのウエハを用いたｌｅｄ搭載構造体
WO2013038964A1 (ja) 2011-09-13 2013-03-21 電気化学工業株式会社 Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
JP2623466B2 (ja) * 1990-02-28 1997-06-25 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
CA2037198C (en) 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3882539B2 (ja) 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP4595198B2 (ja) 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP4649745B2 (ja) 2001-02-01 2011-03-16 ソニー株式会社 発光素子の転写方法
JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP3690340B2 (ja) 2001-03-06 2005-08-31 ソニー株式会社 半導体発光素子及びその製造方法
JP2002261327A (ja) 2001-03-06 2002-09-13 Sony Corp 半導体発光素子及び半導体発光素子の製造方法
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP3956637B2 (ja) 2001-04-12 2007-08-08 ソニー株式会社 窒化物半導体の結晶成長方法及び半導体素子の形成方法
JP3714188B2 (ja) 2001-04-19 2005-11-09 ソニー株式会社 窒化物半導体の気相成長方法及び窒化物半導体素子
JP2002094111A (ja) * 2001-07-27 2002-03-29 Toyoda Gosei Co Ltd 窒素−３族元素化合物半導体発光素子の製造方法
JP3521201B2 (ja) * 2001-08-06 2004-04-19 豊田合成株式会社 窒化ガリウム化合物半導体の製造方法
EP1420463A4 (en) 2001-08-22 2008-11-26 Sony Corp NITRID SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP2004288799A (ja) 2003-03-20 2004-10-14 Sony Corp 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
JP4462289B2 (ja) 2007-05-18 2010-05-12 ソニー株式会社 半導体層の成長方法および半導体発光素子の製造方法
JP5277270B2 (ja) 2010-07-08 2013-08-28 学校法人立命館 結晶成長方法および半導体素子
JP2013187366A (ja) * 2012-03-08 2013-09-19 Hitachi Cable Ltd 窒化物半導体の製造方法
CN102945906A (zh) * 2012-12-06 2013-02-27 上海顿格电子贸易有限公司 水平结构的led芯片

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
US4614961A (en) * 1984-10-09 1986-09-30 Honeywell Inc. Tunable cut-off UV detector based on the aluminum gallium nitride material system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US8934513B2 (en) 1994-09-14 2015-01-13 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
WO2010092972A1 (ja) 2009-02-13 2010-08-19 電気化学工業株式会社 Ｌｅｄ発光素子用複合材料基板、その製造方法及びｌｅｄ発光素子
WO2011013754A1 (ja) 2009-07-31 2011-02-03 電気化学工業株式会社 Ｌｅｄ搭載用ウエハとその製造方法、及びそのウエハを用いたｌｅｄ搭載構造体
WO2013038964A1 (ja) 2011-09-13 2013-03-21 電気化学工業株式会社 Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法

Also Published As

Publication number Publication date
JPS63188938A (ja) 1988-08-04

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