CN102945906A - 水平结构的led芯片 - Google Patents

水平结构的led芯片 Download PDF

Info

Publication number
CN102945906A
CN102945906A CN2012105169708A CN201210516970A CN102945906A CN 102945906 A CN102945906 A CN 102945906A CN 2012105169708 A CN2012105169708 A CN 2012105169708A CN 201210516970 A CN201210516970 A CN 201210516970A CN 102945906 A CN102945906 A CN 102945906A
Authority
CN
China
Prior art keywords
led
led chip
gan layer
chip
packaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012105169708A
Other languages
English (en)
Inventor
瞿崧
文国军
严华锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Dangoo Electronic Trading Co Ltd
Shanghai Dangoo Electronics Co Ltd
Original Assignee
Shanghai Dangoo Electronic Trading Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Dangoo Electronic Trading Co Ltd filed Critical Shanghai Dangoo Electronic Trading Co Ltd
Priority to CN2012105169708A priority Critical patent/CN102945906A/zh
Priority to PCT/CN2013/000140 priority patent/WO2014086081A1/zh
Publication of CN102945906A publication Critical patent/CN102945906A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

本发明涉及一种水平结构的LED芯片，正装或倒装的LED芯片及GaN层、n-GaN层和p-GaN层上涂覆一层透明SiO2绝缘层，并在n-GaN和p-GaN层上分别镀上电极。正装芯片或倒装LED芯片的衬底为透明基板，蓝宝石或碳化硅。透明SiO2绝缘层的材料为硅胶，树脂或者是非导电有机薄膜。本发明的水平结构的LED芯片使得LED芯片在封装制造中，能够像传统贴片电阻、电容那样，用固晶机或贴片机直接贴到基板或支架上，相比较于传统的LED封装制造，适用于更多的LED芯片的封装方式、增加了LED芯片的封装基板材料、提高了LED芯片的封装效率、提升了LED芯片的封装产能。

Description

水平结构的LED芯片
技术领域
本发明涉及一种LED芯片，特别涉及一种水平结构的LED芯片。
背景技术
    LED是发光二极管 (LED,Lighting emitted diode),是利用在电场作用下，PN结发光的固态发光器件。具有高寿命/环保/节能的特点，是绿色环保的新光源。LED技术日趋发展成熟，目前通常LED发白光是通过蓝色芯片激发黄绿荧光粉，进行波长调和而产生出的白光，市场上大规模生产的暖白光效率达到 120 lm/W，超过大部分传统光源。一般而言，LED是通过MOCVD(Metal-organic Chemical Vapor Deposition，金属有机化合物化学气相沉淀)在蓝宝石衬底或碳化硅衬底上长出p型层、n型层以及p-n结发光层，然后通过点亮、切割、扩散颗粒、分等级等工艺做成不同尺寸的芯片，一般而言有10*10 mil, 10*23 mil, 24*24 mil, 40*40 mil等尺寸，可以承受从10mA~1A的恒流电流驱动。传统的封装是将这些芯片固定在一个封装支架上，通过金线焊接芯片的阴极和阳极，通入电流来驱动LED发出蓝色单波长光，从而激发黄绿荧光粉形成白光。支架一般采用工程塑料或者是带金属热沉的塑料，然后通过底部反射来增加其光萃取率，或者是通过硅胶,树脂或玻璃成型或带二次光学透镜来改变内部材料的折射率，从而增加其出光。
传统的封装方式，对于LED芯片的光利用率相当低，一般来讲，LED芯片背面侧面发出的光经过反射/折射之后，其光利用率不超过40%，而LED芯片在背面侧面发出的光占其整个芯片出光的60%，意味着接近有40%的光是被浪费掉的。另外传统的荧光粉点胶工艺，因为荧光粉贴近温度较高的芯片发热源，从而导致荧光粉效率降低，也会影响出光效果。出光效率的降低则意味着发热量的增加，从而对电子元器件的可靠性产生影响，这都是相互影响的结果。由于LED芯片通过封装成LED组件，然后在分别焊接在铝基板上，配上适合的驱动电源和结构壳体，最后做成整灯进行销售。这中间有过多的环节造成效率和成本的浪费。因此，基于简化的目的，通过设计一种最简单的封装结构，提高整体系统出光效率并降低成本。
发明内容
本发明的目的是为了克服LED芯片封装制造中由于现有LED芯片设计使LED芯片制造效率低的缺点，提供一种电极高度相同或相近的水平结构LED的芯片。
为此，本发明的技术方案是：一种水平结构的LED芯片，包括正装结构或倒装结构的LED芯片及GaN层、n-GaN层和p-GaN基层，正装或倒装的LED芯片及GaN层、n-GaN层和p-GaN层上涂覆一层透明SiO2绝缘层， 并在n-GaN和p-GaN层上分别镀上电极。
正装芯片或倒装LED芯片的衬底为透明基板，蓝宝石或碳化硅。透明SiO2绝缘层的材料为硅胶，树脂或者是非导电有机薄膜。
本发明的有益效果是：本发明的水平结构的LED芯片使得LED芯片在封装制造中，能够像传统贴片电阻、电容那样，用固晶机或贴片机直接贴到基板或支架上，相比较于传统的LED封装制造，适用于更多的LED芯片的封装方式、增加了LED芯片的封装基板材料、提高了LED芯片的封装效率、提升了LED芯片的封装产能。
附图说明
图1是本发明的结构示意图。
具体实施方式
下面结合附图和实施例对本发明做出进一步说明。
如图1所示，本发明的水平结构的LED芯片，包括正装结构或倒装结构的LED芯片及GaN层、n-GaN层5和p-GaN层2、透明SiO2绝缘层3、正、负电极1，4等
正装或倒装LED芯片的GaN层、n-GaN层5和p-GaN层2上涂覆一层透明SiO2绝缘层3， 并在n-GaN层5和p-GaN层2上分别镀上电极。
正装芯片或倒装LED芯片芯片的衬底为透明基板，蓝宝石6（AL2O3）或碳化硅（SiC）。透明SiO2绝缘层的材料为，硅胶，树脂或者是非导电有机薄膜。
如图1所示，水平结构LED芯片在蓝宝石6或碳化硅衬底上生长n-GaN层5（包括GaN缓冲层、GaN非掺杂层），在n-GaN层5上生长p-GaN层2，在p-GaN层2上生长  透明SiO2绝缘材料层3，硅胶，树脂或者是非导电有机薄膜。最后生长正电极1 和 负电极4 电极（金、银、铜及合金材料）。

Claims (3)

1.一种水平结构的LED芯片，包括正装结构或倒装结构的LED芯片及GaN层、n-GaN层（5）和p-GaN层（2），其特征在于：所述正装结构或倒装结构的LED芯片及GaN层、n-GaN层（5）和p-GaN层（6）上涂覆一层透明SiO2绝缘层（3）， 并在n-GaN层（5）和p-GaN层（2）上分别镀上电极。
2.根据权利要求1所述的水平结构的LED芯片，其特征在于：所述正装芯片或倒装LED芯片的衬底为透明基板，蓝宝石（6）或碳化硅。
3.根据权利要求1所述的水平结构的LED芯片，其特征在于：所述透明SiO2绝缘层（3）的材料为硅胶，树脂或者是非导电有机薄膜。
CN2012105169708A 2012-12-06 2012-12-06 水平结构的led芯片 Pending CN102945906A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2012105169708A CN102945906A (zh) 2012-12-06 2012-12-06 水平结构的led芯片
PCT/CN2013/000140 WO2014086081A1 (zh) 2012-12-06 2013-02-16 水平结构的led芯片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012105169708A CN102945906A (zh) 2012-12-06 2012-12-06 水平结构的led芯片

Publications (1)

Publication Number Publication Date
CN102945906A true CN102945906A (zh) 2013-02-27

Family

ID=47728830

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012105169708A Pending CN102945906A (zh) 2012-12-06 2012-12-06 水平结构的led芯片

Country Status (2)

Country Link
CN (1) CN102945906A (zh)
WO (1) WO2014086081A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
CN102110754A (zh) * 2009-12-28 2011-06-29 首尔Opto仪器股份有限公司 发光二极管
CN102468380A (zh) * 2010-11-23 2012-05-23 孙智江 一种led等高电极的制作方法
CN102544296A (zh) * 2012-02-24 2012-07-04 余丽 一种倒装led芯片的制作方法
CN203026553U (zh) * 2012-12-06 2013-06-26 上海顿格电子贸易有限公司 水平结构的led芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598105B2 (en) * 2007-12-21 2009-10-06 Tekcore Co., Ltd. Light emitting diode structure and method for fabricating the same
JP5024247B2 (ja) * 2008-09-12 2012-09-12 日立電線株式会社 発光素子
US20120085986A1 (en) * 2009-06-18 2012-04-12 Panasonic Corporation Gallium nitride-based compound semiconductor light-emitting diode
CN101702420B (zh) * 2009-10-15 2011-11-30 厦门市三安光电科技有限公司 一种具有倒置式N电极分布的薄膜GaN基发光器件的制造方法
CN101908593A (zh) * 2010-07-15 2010-12-08 山东华光光电子有限公司 GaN基LED图形化透明导电薄膜的制作方法
CN102044608A (zh) * 2010-11-17 2011-05-04 重庆大学 一种倒装焊led芯片结构及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
CN102110754A (zh) * 2009-12-28 2011-06-29 首尔Opto仪器股份有限公司 发光二极管
CN102468380A (zh) * 2010-11-23 2012-05-23 孙智江 一种led等高电极的制作方法
CN102544296A (zh) * 2012-02-24 2012-07-04 余丽 一种倒装led芯片的制作方法
CN203026553U (zh) * 2012-12-06 2013-06-26 上海顿格电子贸易有限公司 水平结构的led芯片

Also Published As

Publication number Publication date
WO2014086081A1 (zh) 2014-06-12

Similar Documents

Publication Publication Date Title
CN102751274A (zh) 一种立体包覆封装的led芯片
CN102185091B (zh) 一种发光二极管器件及其制造方法
CN203760472U (zh) 一种系统级led封装器件
CN102315208A (zh) 带有镶嵌陶瓷板的led光源封装结构
CN101958387A (zh) 新型led光源模组封装结构
CN203026552U (zh) Led发光元器件支架
CN202839748U (zh) 一种基于倒装led芯片的白光光源模组
CN202259411U (zh) 带有镶嵌陶瓷板的led光源封装结构
CN102903838A (zh) 带散热结构的封装led光源及其制备方法
CN202736973U (zh) 一种立体包覆封装的led芯片
CN203026553U (zh) 水平结构的led芯片
CN102969433A (zh) Led晶片模组化封装工艺
CN203746908U (zh) 一种圆片级led芯片封装结构
CN202205814U (zh) 一种发光二极管器件
CN104979441A (zh) 一种led芯片及其制作方法及led显示装置
CN102945912A (zh) Led发光元器件支架
CN102969437A (zh) Led发光元器件
CN102945906A (zh) 水平结构的led芯片
CN102214746A (zh) 一种氮化镓基功率型led芯片制作方法
CN203026558U (zh) Led发光元器件
CN203707187U (zh) 一种圆片级led芯片封装结构
CN202660334U (zh) 高散热效率led光源
CN201985095U (zh) Led集成封装器件
CN202253004U (zh) 高白度基板led球泡灯
CN203644817U (zh) 一种led封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C05 Deemed withdrawal (patent law before 1993)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130227