CN102945912A - Led发光元器件支架 - Google Patents

Led发光元器件支架 Download PDF

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CN102945912A
CN102945912A CN2012105167492A CN201210516749A CN102945912A CN 102945912 A CN102945912 A CN 102945912A CN 2012105167492 A CN2012105167492 A CN 2012105167492A CN 201210516749 A CN201210516749 A CN 201210516749A CN 102945912 A CN102945912 A CN 102945912A
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light
led
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conductive material
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瞿崧
文国军
严华锋
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Shanghai Dangoo Electronic Trading Co Ltd
Shanghai Dangoo Electronics Co Ltd
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Priority to PCT/CN2013/000137 priority patent/WO2014086079A1/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0108Transparent
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/017Glass ceramic coating, e.g. formed on inorganic substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]

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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种LED发光元器件支架,包括支架体,支架体至少有一面上涂覆线路层,或者至少有一面涂覆绝缘透明导热材料层,绝缘透明导热材料层上面涂覆线路层,单颗或多颗串并联LED芯片组正装或倒装连接于线路层上。本发明在支架体上涂覆线路层,或者涂覆绝缘透明导热材料,绝缘透明导热材料上面涂覆线路层,单颗LED芯片或多颗LED芯片串并联组成的LED芯片正装或倒装连接于线路层上,采用最简单的LED支架方式,使LED芯片全方位发光,有效降低芯片温度,相比较于传统的塑脂支架单侧发光方式,减少LED芯片发光的损耗,提高了支架的散热能力。

Description

LED发光元器件支架
技术领域
本发明涉及一种LED发光元器,尤其是一种LED发光元器件支架。 
背景技术
    LED是发光二极管 (LED, Lighting emitted diode),是利用在电场作用下,PN结发光的固态发光器件。具有高寿命/环保/节能的特点,是绿色环保的新光源。LED技术日趋发展成熟,目前通常LED发白光是通过蓝色芯片激发黄绿荧光粉,进行波长调和而产生出的白光,市场上大规模生产的暖白光效率达到 120 lm/W,超过大部分传统光源。一般而言,LED是通过MOCVD(Metal-organic Chemical Vapor Deposition,金属有机化合物化学气相沉淀)在蓝宝石衬底或碳化硅衬底上长出p型层、n型层以及p-n结发光层,然后通过点亮、切割、扩散颗粒、分等级等工艺做成不同尺寸的芯片,一般而言有10*10 mil, 10*23 mil, 24*24 mil, 40*40 mil等尺寸,可以承受从10mA~1A的恒流电流驱动。传统的封装是将这些芯片固定在一个封装支架上,通过金线焊接芯片的阴极和阳极,通入电流来驱动LED发出蓝色单波长光,从而激发黄绿荧光粉形成白光。支架一般采用工程塑料或者是带金属热沉的塑料,然后通过底部反射来增加其光萃取率,或者是通过硅胶,树脂或玻璃成型或带二次光学透镜来改变内部材料的折射率,从而增加其出光。
传统的封装方式,对于LED芯片的光利用率相当低,一般来讲,LED芯片背面侧面发出的光经过反射/折射之后,其光利用率不超过40%,而LED芯片在背面侧面发出的光占其整个芯片出光的60%,意味着接近有40%的光是被浪费掉的。另外传统的荧光粉点胶工艺,因为荧光粉贴近温度较高的芯片发热源,从而导致荧光粉效率降低,也会影响出光效果。出光效率的降低则意味着发热量的增加,从而对电子元器件的可靠性产生影响,这都是相互影响的结果。由于LED芯片通过封装成LED组件,然后在分别焊接在铝基板上,配上适合的驱动电源和结构壳体,最后做成整灯进行销售。这中间有过多的环节造成效率和成本的浪费。因此,基于简化的目的,通过设计一种最简单的支架结构,提高整体系统出光效率并降低成本。
发明内容
本发明的目的是为了克服LED芯片制造中由于现有封装支架结构使LED芯片光利用率低的缺点,提供一种全方位发光的LED发光元器件支架。
为此,本发明的技术方案是,一种LED发光元器件支架,包括支架体,支架体至少有一面上涂覆线路层,或者至少有一面涂覆绝缘透明导热材料层,绝缘透明导热材料层上面涂覆线路层,单颗或多颗串并联LED芯片组正装或倒装连接于线路层上。
支架体其余至少一面为磨砂面,或者磨砂面上涂覆高辐射材料层。支架体截面为多边形的多面体,或者截面为直线和曲面构成的多面体。线路层的材料为铜,银或者氧化铟锡。 绝缘透明导热材料层的材质为氮化铝。高辐射材料的材质为氧化铝粉末。
本发明的有益效果是:
本发明在支架体上涂覆线路层,或者涂覆绝缘透明导热材料,绝缘透明导热材料上面涂覆线路层,单颗LED芯片或多颗LED芯片串并联组成的LED芯片正装或倒装连接于线路层上,采用最简单的LED支架方式,使LED芯片全方位发光,有效降低芯片温度,相比较于传统的塑脂支架单侧发光方式,减少LED芯片发光的损耗,提高了支架的散热能力。
附图说明
图1是有绝缘透镜导热层的支架示意图;
图2是无绝缘透镜导热层的支架示意图;
图3是磨砂面或磨砂后涂覆高辐射材料表面示意图。
具体实施方式
下面结合附图与实施例对本发明作进一步说明。
如图1至图3所示,本发明的LED发光元器件支架,包括支架体5,LED芯片组1等。
支架体5截面为多边形的多面体,或者截面为直线和曲面构成的多面体透明支架体,支架体5至少有一面上附有线路层3(图2),或者至少有一面附有绝缘透明导热材料层4,绝缘透明导热材料层4上面附有线路层3(图1),单颗或多颗串并联LED芯片组1正装或倒装连接于线路层3上。支架体5其余面不做处理或者至少有一面有涂有提高表面辐射的高辐射材料层或者至少一面表面为磨砂面6或者至少有一磨砂面6上涂覆高辐射材料层,用以增加支架的表面辐射能力。
支架体5的材质为透明玻璃或者透明陶瓷或者透明蓝宝石;线路层的材料为铜,银或者氧化铟锡;绝缘透明导热材料层4的材质为氮化铝。 
如图1所示,透明多面体支架体5至少一面涂覆有绝缘透明导热材料层4,然后在绝缘透明导热材料层4上生长线路层3,单颗或多颗串并联LED芯片组1与线路层3之间通过焊点2形成回路,在其余至少一面进行表面粗化形成磨砂面6,或者表面粗化后涂覆高辐射材料层或者不处理。
如图2和图3所示,透明多面体支架体5至少一面生长线路层3,单颗或多颗串并联LED芯片组1与线路层3之间通过焊点2形成回路,在其余至少一面进行表面粗化形成磨砂面6,或者表面粗化后涂覆高辐射材料层或者不处理。

Claims (6)

1.一种LED发光元器件支架,包括支架体(5),特征在于:支架体(5)至少有一面上涂覆线路层(3),或者至少有一面涂覆绝缘透明导热材料层(4),绝缘透明导热材料层(4)上面涂覆线路层(3),单颗或多颗串并联LED芯片组(1)正装或倒装连接于线路层(3)上。
2.根据权利要求1所述的LED发光元器件支架,其特征在于:所述支架体(5)其余至少一面为磨砂面(6),或者磨砂面(6)上涂覆高辐射材料层。
3.根据权利要求1所述的LED发光元器件支架,其特征在于:所述支架体(5)截面为多边形的多面体,或者截面为直线和曲面构成的多面体。
4.根据权利要求1所述的LED发光元器件支架,其特征在于:所述线路层(3)的材料为铜,银或者氧化铟锡。
5.根据权利要求1所述的LED发光元器件支架,其特征在于:所述绝缘透明导热材料层(4)的材质为氮化铝。
6.根据权利要求2所述的LED发光元器件支架,其特征在于:所述高辐射材料层的材质为氧化铝粉末。
CN2012105167492A 2012-12-06 2012-12-06 Led发光元器件支架 Pending CN102945912A (zh)

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PCT/CN2013/000137 WO2014086079A1 (zh) 2012-12-06 2013-02-16 Led发光元器件支架

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN105023919A (zh) * 2014-07-17 2015-11-04 王志根 倒装式led360°发光元件及其加工方法

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Publication number Priority date Publication date Assignee Title
CN110504244A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led及发光装置

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JP2008124153A (ja) * 2006-11-09 2008-05-29 Toyoda Gosei Co Ltd 発光装置及びその製造方法
CN101364585A (zh) * 2008-09-25 2009-02-11 旭丽电子(广州)有限公司 一种支架、具有支架的芯片封装结构及其制造方法
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CN105023919A (zh) * 2014-07-17 2015-11-04 王志根 倒装式led360°发光元件及其加工方法

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Application publication date: 20130227