WO2014086079A1 - Led发光元器件支架 - Google Patents

Led发光元器件支架 Download PDF

Info

Publication number
WO2014086079A1
WO2014086079A1 PCT/CN2013/000137 CN2013000137W WO2014086079A1 WO 2014086079 A1 WO2014086079 A1 WO 2014086079A1 CN 2013000137 W CN2013000137 W CN 2013000137W WO 2014086079 A1 WO2014086079 A1 WO 2014086079A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
coated
layer
emitting component
circuit layer
Prior art date
Application number
PCT/CN2013/000137
Other languages
English (en)
French (fr)
Inventor
文国军
瞿崧
严华锋
Original Assignee
上海顿格电子贸易有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海顿格电子贸易有限公司 filed Critical 上海顿格电子贸易有限公司
Publication of WO2014086079A1 publication Critical patent/WO2014086079A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0108—Transparent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]

Definitions

  • the invention relates to an LED illuminator, in particular to an LED illuminating component holder.
  • the LED is a light-emitting diode (LED), which is a solid-state light-emitting device that utilizes an electric field to emit light. With high life / environmental / energy saving features, it is a new source of environmental protection. LED technology is becoming more and more mature. At present, LED white light is usually generated by blue chip to stimulate yellow-green phosphor and white light produced by wavelength reconciliation. The mass production of warm white light on the market reaches 120 lm/W, which is more than most light source.
  • LED light-emitting diode
  • an LED is formed by a MOCVD (Metal-organic Chemical Vapor Deposition), a p-type layer, an n-type layer, and a pn junction light-emitting layer on a sapphire substrate or a silicon carbide substrate, and then Different sizes of chips are made by lighting, cutting, diffusing particles, grading, etc. Generally, they are 10*10 mil, 10*23 mil, 24*24 mil, 40*40 mil, etc., and can withstand from 10mA. ⁇ lA constant current drive. The traditional package is to fix these chips on a package holder.
  • MOCVD Metal-organic Chemical Vapor Deposition
  • the cathode and anode of the gold wire soldering chip are used to drive the LED to emit blue single-wavelength light, thereby exciting the yellow-green phosphor to form white light.
  • the brackets are generally made of engineering plastics or plastic with metal heat sinks, and then increase the light extraction rate by bottom reflection, or change the refractive index of the inner material by silica gel, resin or glass molding or with secondary optical lens. Its light.
  • the light utilization rate of the LED chip is relatively low. Generally, after the light emitted from the back side of the LED chip is reflected/refractive, the light utilization rate is not more than 40%, and the light emitted by the LED chip on the back side is light. It accounts for 60% of the entire chip's light output, which means that nearly 40% of the light is wasted.
  • the traditional phosphor dispensing process because the phosphor is close to the higher temperature chip heat source, which leads to a decrease in the efficiency of the phosphor, which also affects the light-emitting effect. A decrease in light extraction efficiency means an increase in heat generation, which affects the reliability of electronic components, which are the result of mutual influence.
  • the LED chip Since the LED chip is packaged into an LED component and then soldered separately on the aluminum substrate, equipped with a suitable driving power source and structural housing, the whole lamp is finally sold. There are too many links in the middle that cause waste of efficiency and cost. Therefore, for the purpose of simplification, by designing a simple stent structure, the overall system efficiency and cost are reduced.
  • the object of the present invention is to overcome the shortcomings of the LED chip in the LED chip manufacturing because of the low utilization rate of the LED chip due to the existing package support structure, and to provide an omnidirectional illumination LED light-emitting component bracket.
  • the technical solution of the present invention is an LED light-emitting component bracket, comprising a bracket body, the bracket body is coated with a circuit layer on at least one side thereof, or at least one side is coated with an insulating transparent heat conductive material layer, and the insulating transparent heat conductive material layer
  • the circuit layer is coated on the top, and single or multiple series-parallel LED chip sets are mounted or flip-chip connected to the circuit layer.
  • At least one side of the rest of the support body is a frosted surface, or a layer of high radiation material is coated on the frosted surface.
  • the cross section of the stent body is a polygonal polyhedron, or a polyhedron composed of a straight line and a curved surface.
  • the material of the circuit layer is copper, silver or indium tin oxide.
  • the material of the insulating transparent heat conductive material layer is aluminum nitride.
  • the material of the high-radiation material is alumina powder.
  • the invention has the beneficial effects that: the invention applies a circuit layer on the support body, or applies an insulating transparent heat conductive material, and the insulating transparent heat conductive material is coated with a circuit layer, and the single LED chip or the LED chips composed of a plurality of LED chips are connected in series and in parallel.
  • the chip is mounted on the circuit layer in the front or bottom of the circuit.
  • the simplest LED bracket is used to make the LED chip emit light in all directions, effectively reducing the temperature of the chip. Compared with the traditional one-side illumination mode of the plastic grease holder, the LED chip is reduced in luminous loss. , improve the heat dissipation capacity of the bracket.
  • Figure 1 is a schematic view of a bracket having a thermally conductive layer of an insulating lens
  • FIG. 2 is a schematic view of a bracket without a heat conducting layer of an insulating lens
  • Figure 3 is a schematic view of the surface of a high-radiation material after sanding or sanding.
  • the LED light-emitting component bracket of the present invention has a package of 5 ⁇ ' ⁇ - ⁇ .
  • the bracket body 5 has a polygonal polyhedron in cross section, or a polyhedral transparent bracket body composed of a straight line and a curved surface.
  • the bracket body 5 has a circuit layer 3 (Fig. 2) on at least one side thereof, or at least one side is provided with an insulating transparent heat conductive material layer.
  • the insulating transparent heat conductive material layer 4 is provided with a circuit layer 3 (Fig. 1), and single or multiple series-parallel LED chip sets 1 are mounted or flip-chip connected to the circuit layer 3.
  • the remaining surface of the support body 5 is not treated or at least one side is coated with a layer of high radiant material which is coated with surface radiation or at least one surface is a frosted surface 6 or at least one frosted surface 6 is coated with a layer of high radiant material for increasing the support.
  • Surface radiation capability is not treated or at least one side is coated with a layer of high radiant material which is coated with surface radiation or at least one surface is a frosted surface 6 or at least one frosted surface 6 is coated with a layer of high radiant material for increasing the support.
  • the material of the bracket body 5 is transparent glass or transparent ceramic or transparent sapphire; the material of the circuit layer is copper, silver or indium tin oxide; and the material of the insulating transparent heat conductive material layer 4 is aluminum nitride.
  • the transparent polyhedral support body 5 is coated with at least one surface of an insulating transparent heat conductive material layer 4, and then a circuit layer 3 is grown on the insulating transparent heat conductive material layer 4, single or multiple series-parallel LED chip sets 1 and lines. Between the layers 3, a loop is formed by the solder joints 2, and at least one of the remaining surfaces is roughened to form a frosted surface 6, or the surface is roughened and then coated with a layer of high radiant material or left untreated.
  • the transparent polyhedral support body 5 grows the circuit layer 3 on at least one side, and a single or a plurality of series-parallel LED chip sets 1 and the circuit layer 3 form a loop through the solder joint 2, and the remaining at least one side is performed.
  • the surface is roughened to form a frosted surface 6, or the surface is roughened and then coated with a layer of high emissivity material or left untreated.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种LED发光元器件支架，包括支架体（5），支架体（5）至少有一面上涂覆线路层（3），或者至少有一面涂覆绝缘透明导热材料层（4），绝缘透明导热材料层（4）上面涂覆线路层（3），单颗或多颗串并联LED芯片组（1）正装或倒装连接于线路层（3）上。这种简单的LED支架方式，使LED芯片全方位发光，有效降低芯片温度，相比较于穿通的塑脂支架单侧发光方式，减少LED芯片发光的损耗，提高了支架的散热能力。

Description

LED发光元器件支架
技术领域
本发明涉及一种 LED发光元器， 尤其是一种 LED发光元器件支架。
背景技术
LED 是发光二极管 （LED, Lighting emitted diode) ,是利用在电场作用下， ΡΝ 结发 光的固态发光器件。 具有高寿命 /环保 /节能的特点， 是绿色环保的新光源。 LED技术日趋 发展成熟， 目前通常 LED发白光是通过蓝色芯片激发黄绿荧光粉， 进行波长调和而产生出 的白光， 市场上大规模生产的暖白光效率达到 120 lm/W, 超过大部分传统光源。 一般而 言， LED 是通过 MOCVD (Metal-organic Chemical Vapor Deposi tion, 金属有机化合物化 学气相沉淀）在蓝宝石衬底或碳化硅衬底上长出 p型层、 n型层以及 p-n结发光层， 然后通 过点亮、切割、扩散颗粒、分等级等工艺做成不同尺寸的芯片，一般而言有 10*10 mil, 10*23 mil, 24*24 mil, 40*40 mil等尺寸， 可以承受从 10mA~lA的恒流电流驱动。 传统的封装 是将这些芯片固定在一个封装支架上， 通过金线焊接芯片的阴极和阳极， 通入电流来驱动 LED发出蓝色单波长光， 从而激发黄绿荧光粉形成白光。 支架一般采用工程塑料或者是带 金属热沉的塑料， 然后通过底部反射来增加其光萃取率， 或者是通过硅胶，树脂或玻璃成 型或带二次光学透镜来改变内部材料的折射率， 从而增加其出光。
传统的封装方式， 对于 LED芯片的光利用率相当低， 一般来讲， LED芯片背面侧面发 出的光经过反射 /折射之后， 其光利用率不超过 40%， 而 LED芯片在背面侧面发出的光占其 整个芯片出光的 60%， 意味着接近有 40%的光是被浪费掉的。 另外传统的荧光粉点胶工艺， 因为荧光粉贴近温度较高的芯片发热源， 从而导致荧光粉效率降低， 也会影响出光效果。 出光效率的降低则意味着发热量的增加， 从而对电子元器件的可靠性产生影响， 这都是相 互影响的结果。 由于 LED芯片通过封装成 LED组件， 然后在分别焊接在铝基板上， 配上适 合的驱动电源和结构壳体， 最后做成整灯进行销售。 这中间有过多的环节造成效率和成本 的浪费。 因此， 基于简化的目的， 通过设计一种最简单的支架结构， 提高整体系统出光效 率并降低成本。
发明内容
本发明的目的是为了克服 LED芯片制造中由于现有封装支架结构使 LED芯片光利用率 低的缺点， 提供一种全方位发光的 LED发光元器件支架。
为此， 本发明的技术方案是， 一种 LED发光元器件支架， 包括支架体， 支架体至少有 一面上涂覆线路层， 或者至少有一面涂覆绝缘透明导热材料层， 绝缘透明导热材料层上面 涂覆线路层， 单颗或多颗串并联 LED芯片组正装或倒装连接于线路层上。
支架体其余至少一面为磨砂面， 或者磨砂面上涂覆高辐射材料层。 支架体截面为多边 形的多面体， 或者截面为直线和曲面构成的多面体。线路层的材料为铜， 银或者氧化铟锡。 绝缘透明导热材料层的材质为氮化铝。 高辐射材料的材质为氧化铝粉末。
本发明的有益效果是- 本发明在支架体上涂覆线路层， 或者涂覆绝缘透明导热材料， 绝缘透明导热材料上面 涂覆线路层， 单颗 LED芯片或多颗 LED芯片串并联组成的 LED芯片正装或倒装连接于线路 层上， 采用最简单的 LED支架方式， 使 LED芯片全方位发光， 有效降低芯片温度， 相比较 于传统的塑脂支架单侧发光方式， 减少 LED芯片发光的损耗， 提高了支架的散热能力。
附图说明
图 1是有绝缘透镜导热层的支架示意图；
图 2是无绝缘透镜导热层的支架示意图；
图 3是磨砂面或磨砂后涂覆高辐射材料表面示意图。
具体实施方式
下面结合附图与实施例对本发明作进一步说明。 如图 1至图 3所示， 本发明的 LED发光元器件支架， 包¾支 5^^ '^^ — ί等。 支架体 5截面为多边形的多面体， 或者截面为直线和曲面构成的多面体透明支架体， 支架体 5至少有一面上附有线路层 3 (图 2 )， 或者至少有一面附有绝缘透明导热材料层 4， 绝缘透明导热材料层 4上面附有线路层 3 (图 1 )， 单颗或多颗串并联 LED芯片组 1正装或 倒装连接于线路层 3上。 支架体 5其余面不做处理或者至少有一面有涂有提高表面辐射的 高辐射材料层或者至少一面表面为磨砂面 6或者至少有一磨砂面 6上涂覆高辐射材料层， 用以增加支架的表面辐射能力。
支架体 5的材质为透明玻璃或者透明陶瓷或者透明蓝宝石； 线路层的材料为铜， 银或 者氧化铟锡； 绝缘透明导热材料层 4的材质为氮化铝。
如图 1所示， 透明多面体支架体 5至少一面涂覆有绝缘透明导热材料层 4， 然后在绝 缘透明导热材料层 4上生长线路层 3, 单颗或多颗串并联 LED芯片组 1与线路层 3之间通 过焊点 2形成回路， 在其余至少一面进行表面粗化形成磨砂面 6, 或者表面粗化后涂覆高 辐射材料层或者不处理。
如图 2和图 3所示， 透明多面体支架体 5至少一面生长线路层 3， 单颗或多颗串并联 LED芯片组 1与线路层 3之间通过焊点 2形成回路， 在其余至少一面进行表面粗化形成磨 砂面 6， 或者表面粗化后涂覆高辐射材料层或者不处理。

Claims

权利要求：
1. 一种 LED发光元器件支架， 包括支架体 （5)， 特征在于： 支架体 （5) 至少有一面上涂 覆线路层 （3)， 或者至少有一面涂覆绝缘透明导热材料层 （4)， 绝缘透明导热材料层 （4) 上面涂覆线路层 （3)， 单颗或多颗串并联 LED芯片组 （1) 正装或倒装连接于线路层 （3) 上。
2. 根据权利要求 1所述的 LED发光元器件支架， 其特征在于： 所述支架体 （5) 其余至少 一面为磨砂面 （6)， 或者磨砂面 （6) 上涂覆高辐射材料层。
3. 根据权利要求 1所述的 LED发光元器件支架， 其特征在于： 所述支架体 （5) 截面为多 边形的多面体， 或者截面为直线和曲面构成的多面体。
4. 根据权利要求 1所述的 LED发光元器件支架， 其特征在于： 所述线路层 （3) 的材料为 铜， 银或者氧化铟锡。
5. 根据权利要求 1所述的 LED发光元器件支架， 其特征在于： 所述绝缘透明导热材料层 (4) 的材质为氮化铝。
6. 根据权利要求 2所述的 LED发光元器件支架， 其特征在于： 所述高辐射材料层的材质 为氧化铝粉末。
PCT/CN2013/000137 2012-12-06 2013-02-16 Led发光元器件支架 WO2014086079A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2012105167492A CN102945912A (zh) 2012-12-06 2012-12-06 Led发光元器件支架
CN201210516749.2 2012-12-06

Publications (1)

Publication Number Publication Date
WO2014086079A1 true WO2014086079A1 (zh) 2014-06-12

Family

ID=47728836

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/000137 WO2014086079A1 (zh) 2012-12-06 2013-02-16 Led发光元器件支架

Country Status (2)

Country Link
CN (1) CN102945912A (zh)
WO (1) WO2014086079A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504244A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led及发光装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105023919A (zh) * 2014-07-17 2015-11-04 王志根 倒装式led360°发光元件及其加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法
JP2008124153A (ja) * 2006-11-09 2008-05-29 Toyoda Gosei Co Ltd 発光装置及びその製造方法
CN101364585A (zh) * 2008-09-25 2009-02-11 旭丽电子(广州)有限公司 一种支架、具有支架的芯片封装结构及其制造方法
CN102130239A (zh) * 2011-01-31 2011-07-20 郑榕彬 全方位采光的led封装方法及led封装件
CN203026552U (zh) * 2012-12-06 2013-06-26 上海顿格电子贸易有限公司 Led发光元器件支架

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1241157C (zh) * 2002-09-20 2006-02-08 新知科技股份有限公司 具有高散热性的发光二极管显示模组
CN101916731B (zh) * 2010-07-12 2012-07-04 深圳大学 一种陶瓷绝缘膜导热基板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法
JP2008124153A (ja) * 2006-11-09 2008-05-29 Toyoda Gosei Co Ltd 発光装置及びその製造方法
CN101364585A (zh) * 2008-09-25 2009-02-11 旭丽电子(广州)有限公司 一种支架、具有支架的芯片封装结构及其制造方法
CN102130239A (zh) * 2011-01-31 2011-07-20 郑榕彬 全方位采光的led封装方法及led封装件
CN203026552U (zh) * 2012-12-06 2013-06-26 上海顿格电子贸易有限公司 Led发光元器件支架

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504244A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led及发光装置

Also Published As

Publication number Publication date
CN102945912A (zh) 2013-02-27

Similar Documents

Publication Publication Date Title
WO2014201774A1 (zh) 一种全方向出光的led球泡灯
WO2006108339A1 (fr) Source de lumiere blanche a diode electroluminescente basee sur un tableau de connexions metalliques
WO2014012346A1 (zh) 一种立体包覆封装的led芯片
TW201032317A (en) Light-emitting diode light source module
CN104024722A (zh) 照明组件、光源和灯具
TW201101548A (en) LED package structure with a plurality of standby pads for increasing wire-bonding yield and method for manufacturing the same
US20130069099A1 (en) Chip-on-board led structure
CN104421682B (zh) Led光源模块和包含该模块的led球泡灯
WO2015135287A1 (zh) 一种led芯片封装体及其制备方法
CN103322437A (zh) 具有强散热能力的发光二极管球泡灯及其制造方法
CN103943769A (zh) 一种使用陶瓷散热的高功率led灯具
CN203026552U (zh) Led发光元器件支架
WO2014086079A1 (zh) Led发光元器件支架
CN102569573A (zh) 改善热传导的led芯片
WO2016029808A1 (zh) 一种led光源发光散热结构及其发光散热方法
WO2014086078A1 (zh) Led发光元器件
WO2014086080A1 (zh) Led晶片模组化封装工艺
WO2011038550A1 (zh) 一种发光二极管节能灯
WO2016184372A2 (zh) Led光源组件、led光电一体化模组和led射灯
CN203277381U (zh) Led多杯集成一体化cob封装结构
CN203413588U (zh) Led光源板组件、led灯芯和led照明装置
CN105546499A (zh) 一种散热器和覆晶工矿灯
CN206112536U (zh) 一种热电分离led
WO2014101248A1 (zh) Led灯丝接插座
CN203026558U (zh) Led发光元器件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13860265

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13860265

Country of ref document: EP

Kind code of ref document: A1