WO2014086078A1 - Led发光元器件 - Google Patents

Led发光元器件 Download PDF

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Publication number
WO2014086078A1
WO2014086078A1 PCT/CN2013/000136 CN2013000136W WO2014086078A1 WO 2014086078 A1 WO2014086078 A1 WO 2014086078A1 CN 2013000136 W CN2013000136 W CN 2013000136W WO 2014086078 A1 WO2014086078 A1 WO 2014086078A1
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Prior art keywords
led chip
led
glass substrate
coated
aluminum nitride
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PCT/CN2013/000136
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English (en)
French (fr)
Inventor
文国军
瞿崧
严华锋
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上海顿格电子贸易有限公司
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Publication of WO2014086078A1 publication Critical patent/WO2014086078A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body

Definitions

  • the invention relates to an LED light-emitting component, in particular to an LED light-emitting component provided with a heat-insulating insulating layer on an LED chip and a glass substrate.
  • the LED is a light-emitting diode (LED), which is a solid-state light-emitting device that emits light by a PN junction under an electric field. With high life / environmental / energy saving features, it is a new source of environmental protection.
  • LED light-emitting diode
  • the LED white light in front of H is a white light that is excited by the blue chip to stimulate the yellow-green phosphor.
  • the current luminous efficiency of LED has exceeded most traditional light sources.
  • the LED is grown on the epitaxial wafer by MOCVD (Metal-organic Chemical Vapor Deposition) to form a PN layer and a light-emitting layer, and then formed into different sizes by a process such as spot measurement, diffusion, and BIN.
  • MOCVD Metal-organic Chemical Vapor Deposition
  • the chip generally 10*10 mi l, 10*23 mi l, 24*24 mi l, 40*40 mi l and so on, can withstand constant current driving from lOmTlA.
  • the traditional package is to fix these chips on a package holder.
  • the cathode and the anode of the gold wire soldering chip are used to drive the LED to emit blue single-wavelength light, thereby exciting the phosphor to form white light.
  • the bracket is generally made of engineering plastic or plastic with a metal heat sink, and then its bottom light reflection is used to increase its light extraction rate, or it is formed by silica gel molding or with a secondary optical lens to change the refractive index of the internal material to increase its light output.
  • the traditional packaging method has a relatively low light utilization rate for the LED chip, and in particular, the LED chip is not fully utilized, so that the LED can be packaged on the glass substrate to increase the light-emitting range.
  • the glass is a poor conductor of heat, the heat of the LED chip cannot be quickly and efficiently dissipated, so a buffer layer is needed to realize heat dissipation of the LED chip.
  • the invention is to solve the technical problem of heat dissipation between the LED chip and the substrate, and to provide an LED light-emitting component, which designs a thermal conductive insulating layer on the LED chip and the glass substrate, and increases the maximum Heat dissipation area for optimal heat dissipation.
  • an LED light-emitting component comprising an LED chip, a glass substrate, a LED chip and a metal conductive line fixed on the glass substrate, wherein: the glass substrate and the LED chip are coated on the connection surface. It is coated with aluminum nitride and coated with LED chips by phosphor glue.
  • LED chips are connected in series and bonded to the circuit of the aluminum nitride coated film.
  • the surface of the LED chip is coated with a phosphor to form a white light device.
  • the aluminum nitride coated film is grown on the glass substrate by film formation by magnetron sputtering.
  • the protective layer of the phosphor paste coated on the outer layer of the LED chip can form a desired shape according to the illuminating light pattern of the chip.
  • LED light-emitting components are coated on an LED chip and a glass substrate with an aluminum nitride (A1N) film as a thermal conductive insulating layer, which increases the heat dissipation area and achieves optimal heat dissipation.
  • A1N aluminum nitride
  • the aluminum nitride film is a high thermal conductive insulating ceramic material, so that the metal wire can be directly arranged on the surface thereof, and the LED chip can be crystallized on the circuit of the A1N film, and the LED can be connected in series, and the LED chip can be efficiently and quickly charged. Scattered.
  • the surface of the chip is coated with phosphor, or a layer of phosphor powder is coated by a remote phosphor, so that the blue light emitted by the LED chip excites the phosphor to form a white light device.
  • Figure 1 is a schematic view of the structure of the present invention.
  • the LED light-emitting component of the present invention comprises an LED chip 1, a metal conductive line 2, an aluminum nitride (A1N) coating 3, a glass substrate 4, and an LED chip 1 and a metal conductive line fixed on the glass substrate 4. 2.
  • the connection surface of the glass substrate 4 and the LED chip 1 is coated with an aluminum nitride (A1N) coating 3, and the LED chip is covered by the phosphor glue 5.
  • a plurality of LED chips 1 are connected in series and bonded to a circuit of an aluminum nitride (A1N) coating 3 film.
  • LED chip 1 chip The surface is coated with a phosphor to form a white light device.
  • the aluminum nitride (A1N) coating 3 film was grown on the glass substrate 4 by magnetron sputtering.
  • the protective layer of the outer layer of the phosphor paste 5 of the LED chip 1 can be formed into a desired shape according to the illuminating light pattern of the chip.
  • the invention is disposed on the high light transmissive glass substrate 4 by using a single LED chip 1 as a unit, and the high light transmissive glass substrate 4 is coated with a film of aluminum nitride (A1N) coating 3, aluminum nitride (A1N).
  • the film of the coating layer 3 has thermal conductivity and insulation properties and can be grown on the glass substrate 4 by film formation by magnetron sputtering.
  • Aluminum nitride (A1N) coating 3 film is a high thermal conductivity insulating ceramic material, so it is possible to directly arrange metal wires on the surface thereof, and solidify the LED chip 1 on the circuit of the A1N aluminum nitride coating 3 film, which can realize The LEDs are connected in series and the LED chip heat can be dissipated efficiently and quickly.
  • the phosphor powder is coated on the surface of the chip, or a layer of phosphor powder is coated by means of a remote fluorescent powder, so that the blue light emitted by the LED chip excites the phosphor to form a white light device.
  • the protective layer of the phosphor paste 5 coated on the outer surface of the LED chip 1 can be designed according to the illuminating light type of the chip, and the shape required for various applications is firstly applied.
  • a layer of aluminum nitride is first applied by a magnetron sputtering device ( A1N)
  • A1N magnetron sputtering device
  • the thermally conductive layer of the coating 3 then a circuit is arranged on the aluminum nitride (A1N) coating 3, and the LED chip 1 is directly fixed, and the light source emitting device is formed by a phosphor coating process.
  • the method for fabricating the LED light-emitting component of the present invention comprises the following steps -
  • the phosphor silica gel is fixedly coated on the LED chip 1 by a phosphor injection mold.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

一种LED发光元器件，包括LED芯片（1）、玻璃基板（4），玻璃基板（4）上面固定LED芯片（1）及金属导电线路（2），玻璃基板（4）与LED芯片（1）连接面上涂有氮化铝涂层（3），并通过荧光粉胶（5）包覆LED芯片（1）。若干个LED芯片（1）串联并固晶在氮化铝涂层（3）的薄膜电路上。LED芯片（1）表面涂敷荧光粉胶（5），形成白光器件。氮化铝涂层（3）薄膜通过磁控溅射的成膜方式生长在玻璃基板（4）上。LED芯片（1）外层包覆的荧光粉胶（5）的保护层可依芯片的发光光型形成所需的形状。LED发光元器件在LED芯片（1）和玻璃基板（4）上，覆有一层氮化铝涂层（3）薄膜作为导热绝缘层，增加了散热面积，实现最佳散热。

Description

LED发光元器件
技术领域
本发明涉及一种 LED发光元器件， 尤其是一种在 LED芯片和玻璃基板上， 设有一层导 热绝缘层的 LED发光元器件。
背景技术
LED是发光二极管 (LED, Lighting emitted diode)，是利用在电场作用下， PN结发光 的固态发光器件。 具有高寿命 /环保 /节能的特点， 是绿色环保的新光源。
LED技术日趋发展成熟， H前 LED白光是通过蓝色芯片激发黄绿荧光粉， 进行波长调 和而产生出的白光， 目前 LED的发光效率己经超过大部分传统光源。 一般而言， LED是通 过 MOCVD (Metal-organic Chemical Vapor Deposition, 金属有机化合物化学气相沉淀） 在外延片上长出 PN层及发光层， 然后通过点测、 扩散、 分 BIN等工艺做成不同尺寸的芯 片， 一般而言有 10*10 mi l, 10*23 mi l, 24*24 mi l, 40*40 mi l等尺寸， 可以承受从 lOmTlA 的恒流电流驱动。 传统的封装是将这些芯片固定在一个封装支架上， 通过金线焊接芯片的 阴极和阳极， 通入电流来驱动 LED发出蓝色单波长光， 从而激发荧光粉形成白光。 支架一 般采用工程塑料或者是带金属热沉的塑料， 然后通过底部反射来增加其光萃取率， 或者是 通过硅胶成型或带二次光学透镜来改变内部材料的折射率， 从而增加其出光。
传统的封装方式， 对于 LED芯片的光利用率相当低， 特别是未能充分利用 LED芯片全 周光， 因此可以通过将 LED封装在玻璃基板上， 来增加其出光范围。 但是由于玻璃是热的 不良导体，不能有效的快速将 LED芯片的热量快速的散发，因此需要一层缓冲层来实现 LED 的芯片散热。
发明内容
本发明是要解决 LED芯片与基板之间的散热技术问题， 而提供一种 LED发光元器件， 该 LED发光元器件在 LED芯片和玻璃基板上， 设计一层导热绝缘层， 并增加其最大的散热 面积， 实现最佳散热。
为实现上述目的， 本发明的技术方案是： 一种 LED发光元器件， 包括 LED芯片、 玻璃 基板， 玻璃基板上面固定 LED芯片及金属导电线路， 其特点是： 玻璃基板与 LED芯片连接 面上涂有氮化铝涂层， 并通过荧光粉胶包覆 LED芯片。
若干个 LED芯片串联并固晶在氮化铝涂层薄膜的电路上。
LED芯片芯片表面涂敷荧光粉， 形成白光器件。
氮化铝涂层薄膜通过磁控溅射的成膜方式生长在玻璃基板上。
LED芯片外层包覆的荧光粉胶的保护层可依芯片的发光光型形成所需的形状。
本发明的有益效果是：
LED发光元器件在 LED芯片和玻璃基板上， 覆有一层氮化铝（A1N)薄膜作为导热绝缘 层， 增加了散热面积， 实现最佳散热。
氮化铝薄膜是高导热性绝缘陶瓷材料， 因此可以在其表面直接布置金属导线， 把 LED 芯片固晶在 A1N薄膜的电路上， 可以实现把 LED串联起来， 并且可以有效快速地把 LED芯 片热量散掉。 同时在芯片表面涂敷荧光粉， 或者采用远程荧光粉的方式， 通过包覆一层荧 光粉层， 使得 LED芯片发出的蓝光激发荧光粉， 形成白光器件。
附图说明
图 1是本发明的结构示意图。
具体实施方式
如图 1所示， 本发明的 LED发光元器件， 包括 LED芯片 1、 金属导电线路 2、 氮化铝 (A1N ) 涂层 3、 玻璃基板 4， 玻璃基板 4上面固定 LED芯片 1及金属导电线路 2, 玻璃基 板 4与 LED芯片 1连接面上涂有氮化铝 （A1N ) 涂层 3， 并通过荧光粉胶 5包覆 LED芯片。
若干个 LED芯片 1串联并固晶在氮化铝（A1N )涂层 3薄膜的电路上。 LED芯片 1芯片 表面涂敷荧光粉， 形成白光器件。
氮化铝 （A1N) 涂层 3薄膜通过磁控溅射的成膜方式生长在玻璃基板 4上。
LED芯片 1外层包覆的荧光粉胶 5的保护层可依芯片的发光光型形成所需的形状。 本发明通过以单颗 LED芯片 1为单元， 置于高透光性玻璃基板 4上， 高透光玻璃基板 4上覆有氮化铝 （A1N)涂层 3的薄膜， 氮化铝 （A1N)涂层 3的薄膜具有导热性和绝缘性， 可以通过磁控溅射的成膜方式生长在玻璃基板 4上。
氮化铝 （A1N) 涂层 3 薄膜是高导热性绝缘陶瓷材料， 因此可以在其表面直接布置金 属导线，把 LED芯片 1固晶在 A1N氮化铝涂层 3薄膜的电路上，可以实现把 LED串联起来， 并且可以有效快速地把 LED芯片热量散掉。 同时在芯片表面涂敷荧光粉， 或者采用远程荧 光粉的方式， 通过包覆一层荧光粉层， 使得 LED芯片发出的蓝光激发荧光粉， 形成白光器 件。
LED芯片 1外层包覆的荧光粉胶 5保护层可依芯片的发光光型， 设计出各种应用所需 的形状， 在透明基板首先通过磁控溅射设备涂敷一层氮化铝 （A1N ) 涂层 3 的导热层， 然 后在氮化铝（A1N)涂层 3上布置电路， 并直接固晶 LED芯片 1， 并通过荧光粉涂敷工艺形 成光源发光器件。
本发明的 LED发光元器件的制作方法包括以下步骤-
( 1 ) 在高透光玻璃基板 4上通过蒸镀或者离子溅射镀上氮化铝 （A1N) 涂层 3薄膜；
( 2 ) 通过掩膜的方式蒸镀金属材料， 形成玻璃基板 4的线路导电层；
( 3 ) 按照预先设计的位置将 LED芯片 1固晶贴到玻璃基板 4上；
(4 ) 将荧光粉硅胶通过荧光粉注塑模固定包覆在 LED芯片 1上面。

Claims

权利要求：
1. 一种 LED发光元器件， 包括 LED芯片（1)、玻璃基板（4)， 玻璃基板（4)上面固定 LED 芯片 （1) 及金属导电线路 （2)， 其特征在于： 所述玻璃基板 （4) 与 LED 芯片 （1) 连接 面上涂有氮化铝涂层 （3)， 并通过荧光粉胶 （5) 包覆 LED芯片 （1)。
2. 根据权利要求 1所述的 LED发光元器件， 其特征在于： 若千个所述 LED芯片 （1) 串联 并固晶在氮化铝涂层 （3) 薄膜的电路上。
3. 根据权利要求 1所述的 LED发光元器件， 其特征在于： 所述 LED芯片 （1) 表面涂敷荧 光粉， 形成白光器件。
4. 根据权利要求 1所述的 LED发光元器件， 其特征在于： 所述氮化铝涂层 （3) 薄膜通过 磁控溅射的成膜方式生长在玻璃基板 （4) 上。
5. 根据权利要求 1所述的 LED发光元器件， 其特征在于： 所述 LED芯片 （1) 外层包覆的 荧光粉胶 （5) 的保护层可依芯片的发光光型形成所需的形状。
PCT/CN2013/000136 2012-12-06 2013-02-16 Led发光元器件 WO2014086078A1 (zh)

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CN104332553A (zh) * 2014-10-23 2015-02-04 福建永德吉灯业股份有限公司 单向发光的led发光元件cob封装结构及其应用

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CN102811550A (zh) * 2011-06-02 2012-12-05 李金连 具有散热器的电路板及其制造方法
CN203026558U (zh) * 2012-12-06 2013-06-26 上海顿格电子贸易有限公司 Led发光元器件

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