JPS63188938A - 窒化ガリウム系化合物半導体の気相成長方法 - Google Patents

窒化ガリウム系化合物半導体の気相成長方法

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Publication number
JPS63188938A
JPS63188938A JP62021126A JP2112687A JPS63188938A JP S63188938 A JPS63188938 A JP S63188938A JP 62021126 A JP62021126 A JP 62021126A JP 2112687 A JP2112687 A JP 2112687A JP S63188938 A JPS63188938 A JP S63188938A
Authority
JP
Japan
Prior art keywords
sapphire substrate
thin film
gallium nitride
reaction gas
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62021126A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0573252B2 (enExample
Inventor
Katsuhide Manabe
勝英 真部
Nobuo Okazaki
伸夫 岡崎
Isamu Akasaki
勇 赤崎
Kazumasa Hiramatsu
和政 平松
Hiroshi Amano
浩 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagoya University NUC
Toyoda Gosei Co Ltd
Original Assignee
Nagoya University NUC
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagoya University NUC, Toyoda Gosei Co Ltd filed Critical Nagoya University NUC
Priority to JP62021126A priority Critical patent/JPS63188938A/ja
Priority to EP91113265A priority patent/EP0460710B1/en
Priority to DE3852402T priority patent/DE3852402T2/de
Priority to EP88101267A priority patent/EP0277597B1/en
Priority to DE3850582T priority patent/DE3850582T2/de
Publication of JPS63188938A publication Critical patent/JPS63188938A/ja
Priority to US07/811,899 priority patent/US5218216A/en
Publication of JPH0573252B2 publication Critical patent/JPH0573252B2/ja
Granted legal-status Critical Current

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  • Led Devices (AREA)
JP62021126A 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法 Granted JPS63188938A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62021126A JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法
EP91113265A EP0460710B1 (en) 1987-01-31 1988-01-28 Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same
DE3852402T DE3852402T2 (de) 1987-01-31 1988-01-28 Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung.
EP88101267A EP0277597B1 (en) 1987-01-31 1988-01-28 Gallium nitride group semiconductor light emitting diode and the process of producing the same
DE3850582T DE3850582T2 (de) 1987-01-31 1988-01-28 Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung.
US07/811,899 US5218216A (en) 1987-01-31 1991-12-20 Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62021126A JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法

Publications (2)

Publication Number Publication Date
JPS63188938A true JPS63188938A (ja) 1988-08-04
JPH0573252B2 JPH0573252B2 (enExample) 1993-10-14

Family

ID=12046193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62021126A Granted JPS63188938A (ja) 1987-01-31 1987-01-31 窒化ガリウム系化合物半導体の気相成長方法

Country Status (1)

Country Link
JP (1) JPS63188938A (enExample)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH03252175A (ja) * 1990-02-28 1991-11-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP2002094111A (ja) * 2001-07-27 2002-03-29 Toyoda Gosei Co Ltd 窒素−３族元素化合物半導体発光素子の製造方法
JP2002100807A (ja) * 2001-08-06 2002-04-05 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6734030B2 (en) 2001-03-06 2004-05-11 Sony Corporation Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US6818465B2 (en) 2001-08-22 2004-11-16 Sony Corporation Nitride semiconductor element and production method for nitride semiconductor element
US6828591B2 (en) 2000-12-15 2004-12-07 Sony Corporation Semiconductor light emitting device and fabrication method thereof
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6830946B2 (en) 2001-02-01 2004-12-14 Sony Corporation Device transfer method and panel
US6831300B2 (en) 2001-02-21 2004-12-14 Sony Corporation Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
US6870190B2 (en) 2001-03-06 2005-03-22 Sony Corporation Display unit and semiconductor light emitting device
US6924500B2 (en) 2000-07-18 2005-08-02 Sony Corporation Semiconductor light-emitting device and process for producing the same
KR100518353B1 (ko) * 2001-03-27 2005-10-12 히다찌 케이블 리미티드 Ｉｉｉ족질화물로 된 반도체기판 및 그 제조방법
US7033436B2 (en) 2001-04-12 2006-04-25 Sony Corporation Crystal growth method for nitride semiconductor and formation method for semiconductor device
US7227189B2 (en) 2001-04-19 2007-06-05 Sony Corporation Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
US7250320B2 (en) 2003-03-20 2007-07-31 Sony Corporation Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
US8242513B2 (en) 2007-05-18 2012-08-14 Sony Corporation Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
CN102945906A (zh) * 2012-12-06 2013-02-27 上海顿格电子贸易有限公司 水平结构的led芯片
JP2013187366A (ja) * 2012-03-08 2013-09-19 Hitachi Cable Ltd 窒化物半導体の製造方法
US8698168B2 (en) 2010-07-08 2014-04-15 Sharp Kabushiki Kaisha Semiconductor device having aluminum nitride layer with void formed therein

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
KR20110134878A (ko) 2009-02-13 2011-12-15 덴끼 가가꾸 고교 가부시키가이샤 Ｌｅｄ 발광소자용 복합재료 기판, 그 제조 방법 및 ｌｅｄ 발광소자
JP5789512B2 (ja) 2009-07-31 2015-10-07 電気化学工業株式会社 Ｌｅｄ搭載用ウエハとその製造方法、及びそのウエハを用いたｌｅｄ搭載構造体
KR20140072876A (ko) 2011-09-13 2014-06-13 덴끼 가가꾸 고교 가부시키가이샤 Led 발광 소자 보유 기판용 클래드재 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPS6191977A (ja) * 1984-10-09 1986-05-10 ハネウエル・インコーポレーテッド 固体紫外線検出器とその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPS6191977A (ja) * 1984-10-09 1986-05-10 ハネウエル・インコーポレーテッド 固体紫外線検出器とその製造方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
JPH03252175A (ja) * 1990-02-28 1991-11-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5296395A (en) * 1991-05-17 1994-03-22 Apa Optics, Inc. Method of making a high electron mobility transistor
US7221001B2 (en) 2000-07-18 2007-05-22 Sony Corporation Semiconductor light-emitting device and process for producing the same
US6924500B2 (en) 2000-07-18 2005-08-02 Sony Corporation Semiconductor light-emitting device and process for producing the same
US6828591B2 (en) 2000-12-15 2004-12-07 Sony Corporation Semiconductor light emitting device and fabrication method thereof
US7233030B2 (en) 2001-02-01 2007-06-19 Sony Corporation Device transfer method and panel
US6830946B2 (en) 2001-02-01 2004-12-14 Sony Corporation Device transfer method and panel
US6921675B2 (en) 2001-02-01 2005-07-26 Sony Corporation Device transfer method and panel
US6831300B2 (en) 2001-02-21 2004-12-14 Sony Corporation Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
US6734030B2 (en) 2001-03-06 2004-05-11 Sony Corporation Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US6870190B2 (en) 2001-03-06 2005-03-22 Sony Corporation Display unit and semiconductor light emitting device
KR100518353B1 (ko) * 2001-03-27 2005-10-12 히다찌 케이블 리미티드 Ｉｉｉ족질화물로 된 반도체기판 및 그 제조방법
US7033436B2 (en) 2001-04-12 2006-04-25 Sony Corporation Crystal growth method for nitride semiconductor and formation method for semiconductor device
US7227189B2 (en) 2001-04-19 2007-06-05 Sony Corporation Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
JP2002094111A (ja) * 2001-07-27 2002-03-29 Toyoda Gosei Co Ltd 窒素−３族元素化合物半導体発光素子の製造方法
JP2002100807A (ja) * 2001-08-06 2002-04-05 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
US6818465B2 (en) 2001-08-22 2004-11-16 Sony Corporation Nitride semiconductor element and production method for nitride semiconductor element
US7250320B2 (en) 2003-03-20 2007-07-31 Sony Corporation Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
US8242513B2 (en) 2007-05-18 2012-08-14 Sony Corporation Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
US8698168B2 (en) 2010-07-08 2014-04-15 Sharp Kabushiki Kaisha Semiconductor device having aluminum nitride layer with void formed therein
JP2013187366A (ja) * 2012-03-08 2013-09-19 Hitachi Cable Ltd 窒化物半導体の製造方法
CN102945906A (zh) * 2012-12-06 2013-02-27 上海顿格电子贸易有限公司 水平结构的led芯片

Also Published As

Publication number Publication date
JPH0573252B2 (enExample) 1993-10-14

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