JPH0571134B2 - - Google Patents

Info

Publication number
JPH0571134B2
JPH0571134B2 JP60064023A JP6402385A JPH0571134B2 JP H0571134 B2 JPH0571134 B2 JP H0571134B2 JP 60064023 A JP60064023 A JP 60064023A JP 6402385 A JP6402385 A JP 6402385A JP H0571134 B2 JPH0571134 B2 JP H0571134B2
Authority
JP
Japan
Prior art keywords
mask
gate
crystal substrate
semiconductor crystal
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60064023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112077A (ja
Inventor
Fuyu Fuangu Furanku
Emu Gurosuman Baatorando
Wangu Uei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6112077A publication Critical patent/JPS6112077A/ja
Publication of JPH0571134B2 publication Critical patent/JPH0571134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133—Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs
JP60064023A 1984-06-22 1985-03-29 半導体構造体の製造方法 Granted JPS6112077A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/623,810 US4532698A (en) 1984-06-22 1984-06-22 Method of making ultrashort FET using oblique angle metal deposition and ion implantation
US623810 1984-06-22

Publications (2)

Publication Number Publication Date
JPS6112077A JPS6112077A (ja) 1986-01-20
JPH0571134B2 true JPH0571134B2 (enExample) 1993-10-06

Family

ID=24499485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60064023A Granted JPS6112077A (ja) 1984-06-22 1985-03-29 半導体構造体の製造方法

Country Status (4)

Country Link
US (1) US4532698A (enExample)
EP (1) EP0179196B1 (enExample)
JP (1) JPS6112077A (enExample)
DE (1) DE3567320D1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566186B1 (fr) * 1984-06-14 1986-08-29 Thomson Csf Procede de fabrication d'au moins un transistor a effet de champ en couche mince et transistor obtenu par ce procede
US4649638A (en) * 1985-04-17 1987-03-17 International Business Machines Corp. Construction of short-length electrode in semiconductor device
US4640003A (en) * 1985-09-30 1987-02-03 The United States Of America As Represented By The Secretary Of The Navy Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment
US4839704A (en) * 1987-09-16 1989-06-13 National Semiconductor Corporation Application of deep-junction non-self-aligned transistors for suppressing hot carriers
JPH022142A (ja) * 1988-06-13 1990-01-08 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
JPH0748503B2 (ja) * 1988-11-29 1995-05-24 三菱電機株式会社 電界効果トランジスタの製造方法
EP0416141A1 (de) * 1989-09-04 1991-03-13 Siemens Aktiengesellschaft Verfahren zur Herstellung eines FET mit asymmetrisch angeordnetem Gate-Bereich
US5202272A (en) * 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
US5219772A (en) * 1991-08-15 1993-06-15 At&T Bell Laboratories Method for making field effect devices with ultra-short gates
US5391510A (en) * 1992-02-28 1995-02-21 International Business Machines Corporation Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
DE4441723A1 (de) * 1994-11-23 1996-05-30 Siemens Ag Herstellungsverfahren für Gate-Elektroden von MOSFETs
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
KR100221627B1 (ko) * 1996-07-29 1999-09-15 구본준 반도체장치 및 그의 제조방법
US6025208A (en) * 1997-08-27 2000-02-15 The Board Of Trustees Of The Leland Stanford Junior University Method of making electrical elements on the sidewalls of micromechanical structures
US20020063263A1 (en) * 2000-11-30 2002-05-30 Scott David B. Metal oxide semiconductor transistor with self-aligned channel implant
TWI228297B (en) * 2003-12-12 2005-02-21 Richtek Techohnology Corp Asymmetrical cellular metal-oxide semiconductor transistor array
CN101536153B (zh) * 2006-11-06 2011-07-20 Nxp股份有限公司 制造fet栅极的方法
CN102179691A (zh) * 2011-05-11 2011-09-14 西安飞机工业（集团）有限责任公司 飞机发动机安装装置及飞机发动机安装方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873371A (en) * 1972-11-07 1975-03-25 Hughes Aircraft Co Small geometry charge coupled device and process for fabricating same
US3846822A (en) * 1973-10-05 1974-11-05 Bell Telephone Labor Inc Methods for making field effect transistors
US4232439A (en) * 1976-11-30 1980-11-11 Vlsi Technology Research Association Masking technique usable in manufacturing semiconductor devices
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4135289A (en) * 1977-08-23 1979-01-23 Bell Telephone Laboratories, Incorporated Method for producing a buried junction memory device
JPS5939906B2 (ja) * 1978-05-04 1984-09-27 超エル・エス・アイ技術研究組合 半導体装置の製造方法
DE2821975C2 (de) * 1978-05-19 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4377899A (en) * 1979-11-19 1983-03-29 Sumitomo Electric Industries, Ltd. Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4358340A (en) * 1980-07-14 1982-11-09 Texas Instruments Incorporated Submicron patterning without using submicron lithographic technique
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
US4430791A (en) * 1981-12-30 1984-02-14 International Business Machines Corporation Sub-micrometer channel length field effect transistor process
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
JPS59124172A (ja) * 1982-12-30 1984-07-18 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Ｆｅｔ製造方法

Also Published As

Publication number Publication date
US4532698A (en) 1985-08-06
EP0179196A3 (en) 1987-07-22
DE3567320D1 (en) 1989-02-09
EP0179196A2 (en) 1986-04-30
JPS6112077A (ja) 1986-01-20
EP0179196B1 (en) 1989-01-04

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