JPH0528503B2 - - Google Patents

Info

Publication number
JPH0528503B2
JPH0528503B2 JP60131009A JP13100985A JPH0528503B2 JP H0528503 B2 JPH0528503 B2 JP H0528503B2 JP 60131009 A JP60131009 A JP 60131009A JP 13100985 A JP13100985 A JP 13100985A JP H0528503 B2 JPH0528503 B2 JP H0528503B2
Authority
JP
Japan
Prior art keywords
semiconductor device
multilayer semiconductor
heat sink
multilayer
device chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60131009A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61288455A (ja
Inventor
Takashi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60131009A priority Critical patent/JPS61288455A/ja
Priority to KR1019860004722A priority patent/KR900008973B1/ko
Priority to DE8686304575T priority patent/DE3685612T2/de
Priority to EP86304575A priority patent/EP0206696B1/en
Publication of JPS61288455A publication Critical patent/JPS61288455A/ja
Priority to US07/667,257 priority patent/US5051865A/en
Publication of JPH0528503B2 publication Critical patent/JPH0528503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/834—Interconnections on sidewalls of chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP60131009A 1985-06-17 1985-06-17 多層半導体装置の製造方法 Granted JPS61288455A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60131009A JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法
KR1019860004722A KR900008973B1 (ko) 1985-06-17 1986-06-13 다층 반도체장치
DE8686304575T DE3685612T2 (de) 1985-06-17 1986-06-13 Mehrschicht-halbleiteranordnung.
EP86304575A EP0206696B1 (en) 1985-06-17 1986-06-13 Multi-layer semiconductor device
US07/667,257 US5051865A (en) 1985-06-17 1991-03-11 Multi-layer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131009A JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61288455A JPS61288455A (ja) 1986-12-18
JPH0528503B2 true JPH0528503B2 (https=) 1993-04-26

Family

ID=15047836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131009A Granted JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法

Country Status (5)

Country Link
US (1) US5051865A (https=)
EP (1) EP0206696B1 (https=)
JP (1) JPS61288455A (https=)
KR (1) KR900008973B1 (https=)
DE (1) DE3685612T2 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954875A (en) * 1986-07-17 1990-09-04 Laser Dynamics, Inc. Semiconductor wafer array with electrically conductive compliant material
FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
EP0476136A4 (en) * 1990-01-24 1992-04-22 Nauchno-Proizvodstvenny Tsentr Elektronnoi Mikrotekhnologii Akademii Nauk Ssr Three-dimensional electronic unit and method of construction
JP3058898B2 (ja) * 1990-09-03 2000-07-04 三菱電機株式会社 半導体装置及びその評価方法
JPH0817221B2 (ja) * 1990-11-13 1996-02-21 株式会社東芝 半導体装置及び半導体ウェーハの実装方法
US5847448A (en) * 1990-12-11 1998-12-08 Thomson-Csf Method and device for interconnecting integrated circuits in three dimensions
US5451550A (en) * 1991-02-20 1995-09-19 Texas Instruments Incorporated Method of laser CVD seal a die edge
JPH0513666A (ja) * 1991-06-29 1993-01-22 Sony Corp 複合半導体装置
US5202754A (en) * 1991-09-13 1993-04-13 International Business Machines Corporation Three-dimensional multichip packages and methods of fabrication
JPH0715969B2 (ja) * 1991-09-30 1995-02-22 インターナショナル・ビジネス・マシーンズ・コーポレイション マルチチツプ集積回路パツケージ及びそのシステム
DE69305981T2 (de) * 1992-03-17 1997-05-15 Massachusetts Inst Technology Geringbenachbarte dreidimensionale verbindung.
US5691885A (en) * 1992-03-17 1997-11-25 Massachusetts Institute Of Technology Three-dimensional interconnect having modules with vertical top and bottom connectors
DE4211899C2 (de) * 1992-04-09 1998-07-16 Daimler Benz Aerospace Ag Mikrosystem-Laseranordnung und Mikrosystem-Laser
JPH0779144B2 (ja) * 1992-04-21 1995-08-23 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐熱性半導体チップ・パッケージ
US5343366A (en) * 1992-06-24 1994-08-30 International Business Machines Corporation Packages for stacked integrated circuit chip cubes
EP0586888B1 (en) * 1992-08-05 2001-07-18 Fujitsu Limited Three-dimensional multichip module
US5854534A (en) * 1992-08-05 1998-12-29 Fujitsu Limited Controlled impedence interposer substrate
US5313097A (en) * 1992-11-16 1994-05-17 International Business Machines, Corp. High density memory module
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5596226A (en) * 1994-09-06 1997-01-21 International Business Machines Corporation Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module
US5521434A (en) * 1994-10-17 1996-05-28 International Business Machines Corporation Semiconductor chip and electronic module with integrated surface interconnects/components
US5818112A (en) * 1994-11-15 1998-10-06 Siemens Aktiengesellschaft Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit
US5701037A (en) * 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
US5609772A (en) * 1995-06-05 1997-03-11 International Business Machines Corporation Cube maskless lead open process using chemical mechanical polish/lead-tip expose process
US5719745A (en) * 1995-07-12 1998-02-17 International Business Machines Corporation Extended surface cooling for chip stack applications
US5648684A (en) * 1995-07-26 1997-07-15 International Business Machines Corporation Endcap chip with conductive, monolithic L-connect for multichip stack
DE19543540C1 (de) 1995-11-22 1996-11-21 Siemens Ag Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür
US5763943A (en) * 1996-01-29 1998-06-09 International Business Machines Corporation Electronic modules with integral sensor arrays
US5952725A (en) 1996-02-20 1999-09-14 Micron Technology, Inc. Stacked semiconductor devices
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
US5781413A (en) * 1996-09-30 1998-07-14 International Business Machines Corporation Method and apparatus for directing the input/output connection of integrated circuit chip cube configurations
US5815374A (en) * 1996-09-30 1998-09-29 International Business Machines Corporation Method and apparatus for redirecting certain input/output connections of integrated circuit chip configurations
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
US6075287A (en) * 1997-04-03 2000-06-13 International Business Machines Corporation Integrated, multi-chip, thermally conductive packaging device and methodology
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5793103A (en) * 1997-05-08 1998-08-11 International Business Machines Corporation Insulated cube with exposed wire lead
JP3501644B2 (ja) * 1998-02-02 2004-03-02 日本電気株式会社 半導体パッケージの熱抵抗計算方法および記録媒体および熱抵抗計算装置
EP1135802A4 (en) * 1998-07-27 2004-08-25 Reveo Inc THREE-DIMENSIONAL PACKAGING TECHNOLOGY FOR MULTI-LAYER INTEGRATED CIRCUITS
JP2001352035A (ja) * 2000-06-07 2001-12-21 Sony Corp 多層半導体装置の組立治具及び多層半導体装置の製造方法
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6743972B2 (en) 2000-09-18 2004-06-01 Chris Macris Heat dissipating IC devices
US6818817B2 (en) 2000-09-18 2004-11-16 Chris Macris Heat dissipating silicon-on-insulator structures
US6727422B2 (en) 2000-09-18 2004-04-27 Chris Macris Heat sink/heat spreader structures and methods of manufacture
US20030002267A1 (en) * 2001-06-15 2003-01-02 Mantz Frank E. I/O interface structure
US6945054B1 (en) * 2002-10-04 2005-09-20 Richard S. Norman Method and apparatus for cooling microelectronic complexes including multiple discrete functional modules
US6856010B2 (en) * 2002-12-05 2005-02-15 Staktek Group L.P. Thin scale outline package
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP2004311464A (ja) 2003-04-01 2004-11-04 Renesas Technology Corp 半導体装置
US20040207990A1 (en) * 2003-04-21 2004-10-21 Rose Andrew C. Stair-step signal routing
JP4238998B2 (ja) 2004-03-18 2009-03-18 セイコーエプソン株式会社 電気デバイス
US7999383B2 (en) 2006-07-21 2011-08-16 Bae Systems Information And Electronic Systems Integration Inc. High speed, high density, low power die interconnect system
US7936058B2 (en) * 2007-05-14 2011-05-03 Kabushiki Kaisha Nihon Micronics Stacked package and method for forming stacked package
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8772920B2 (en) * 2011-07-13 2014-07-08 Oracle International Corporation Interconnection and assembly of three-dimensional chip packages
MY192051A (en) * 2016-12-29 2022-07-25 Intel Corp Stacked dice systems

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243660A (en) * 1966-03-29 Electroni c module as sbmbly
GB1083200A (en) * 1966-08-17 1967-09-13 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
DE1591105A1 (de) * 1967-12-06 1970-09-24 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Festkoerperschaltungen
US3705332A (en) * 1970-06-25 1972-12-05 Howard L Parks Electrical circuit packaging structure and method of fabrication thereof
US3704455A (en) * 1971-02-01 1972-11-28 Alfred D Scarbrough 3d-coaxial memory construction and method of making
US4283754A (en) * 1979-03-26 1981-08-11 Bunker Ramo Corporation Cooling system for multiwafer high density circuit
US4546406A (en) * 1980-09-25 1985-10-08 Texas Instruments Incorporated Electronic circuit interconnection system
JPS5839055A (ja) * 1981-08-31 1983-03-07 Matsushita Electric Ind Co Ltd 半導体装置
US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
JPS5890744A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS5891664A (ja) * 1981-11-26 1983-05-31 Mitsubishi Electric Corp 積層構造半導体装置
US4628407A (en) * 1983-04-22 1986-12-09 Cray Research, Inc. Circuit module with enhanced heat transfer and distribution
US4514784A (en) * 1983-04-22 1985-04-30 Cray Research, Inc. Interconnected multiple circuit module
DE3381187D1 (de) * 1983-11-07 1990-03-08 Irvine Sensors Corp Detektoranordnungsstruktur und -herstellung.
JPS6118164A (ja) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp 半導体装置
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module

Also Published As

Publication number Publication date
KR870000760A (ko) 1987-02-20
DE3685612D1 (de) 1992-07-16
EP0206696B1 (en) 1992-06-10
JPS61288455A (ja) 1986-12-18
US5051865A (en) 1991-09-24
KR900008973B1 (ko) 1990-12-15
EP0206696A2 (en) 1986-12-30
DE3685612T2 (de) 1993-01-28
EP0206696A3 (en) 1988-08-10

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