KR900008973B1 - 다층 반도체장치 - Google Patents

다층 반도체장치 Download PDF

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Publication number
KR900008973B1
KR900008973B1 KR1019860004722A KR860004722A KR900008973B1 KR 900008973 B1 KR900008973 B1 KR 900008973B1 KR 1019860004722 A KR1019860004722 A KR 1019860004722A KR 860004722 A KR860004722 A KR 860004722A KR 900008973 B1 KR900008973 B1 KR 900008973B1
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KR
South Korea
Prior art keywords
heat sink
semiconductor device
plate
aluminum
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860004722A
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English (en)
Korean (ko)
Other versions
KR870000760A (ko
Inventor
다까시 가또
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰 가부시끼가이샤
Publication of KR870000760A publication Critical patent/KR870000760A/ko
Application granted granted Critical
Publication of KR900008973B1 publication Critical patent/KR900008973B1/ko
Expired legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/834Interconnections on sidewalls of chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/288Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1019860004722A 1985-06-17 1986-06-13 다층 반도체장치 Expired KR900008973B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-131009 1985-06-17
JP131009 1985-06-17
JP60131009A JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870000760A KR870000760A (ko) 1987-02-20
KR900008973B1 true KR900008973B1 (ko) 1990-12-15

Family

ID=15047836

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004722A Expired KR900008973B1 (ko) 1985-06-17 1986-06-13 다층 반도체장치

Country Status (5)

Country Link
US (1) US5051865A (https=)
EP (1) EP0206696B1 (https=)
JP (1) JPS61288455A (https=)
KR (1) KR900008973B1 (https=)
DE (1) DE3685612T2 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954875A (en) * 1986-07-17 1990-09-04 Laser Dynamics, Inc. Semiconductor wafer array with electrically conductive compliant material
FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
EP0476136A4 (en) * 1990-01-24 1992-04-22 Nauchno-Proizvodstvenny Tsentr Elektronnoi Mikrotekhnologii Akademii Nauk Ssr Three-dimensional electronic unit and method of construction
JP3058898B2 (ja) * 1990-09-03 2000-07-04 三菱電機株式会社 半導体装置及びその評価方法
JPH0817221B2 (ja) * 1990-11-13 1996-02-21 株式会社東芝 半導体装置及び半導体ウェーハの実装方法
US5847448A (en) * 1990-12-11 1998-12-08 Thomson-Csf Method and device for interconnecting integrated circuits in three dimensions
US5451550A (en) * 1991-02-20 1995-09-19 Texas Instruments Incorporated Method of laser CVD seal a die edge
JPH0513666A (ja) * 1991-06-29 1993-01-22 Sony Corp 複合半導体装置
US5202754A (en) * 1991-09-13 1993-04-13 International Business Machines Corporation Three-dimensional multichip packages and methods of fabrication
JPH0715969B2 (ja) * 1991-09-30 1995-02-22 インターナショナル・ビジネス・マシーンズ・コーポレイション マルチチツプ集積回路パツケージ及びそのシステム
DE69305981T2 (de) * 1992-03-17 1997-05-15 Massachusetts Inst Technology Geringbenachbarte dreidimensionale verbindung.
US5691885A (en) * 1992-03-17 1997-11-25 Massachusetts Institute Of Technology Three-dimensional interconnect having modules with vertical top and bottom connectors
DE4211899C2 (de) * 1992-04-09 1998-07-16 Daimler Benz Aerospace Ag Mikrosystem-Laseranordnung und Mikrosystem-Laser
JPH0779144B2 (ja) * 1992-04-21 1995-08-23 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐熱性半導体チップ・パッケージ
US5343366A (en) * 1992-06-24 1994-08-30 International Business Machines Corporation Packages for stacked integrated circuit chip cubes
EP0586888B1 (en) * 1992-08-05 2001-07-18 Fujitsu Limited Three-dimensional multichip module
US5854534A (en) * 1992-08-05 1998-12-29 Fujitsu Limited Controlled impedence interposer substrate
US5313097A (en) * 1992-11-16 1994-05-17 International Business Machines, Corp. High density memory module
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5596226A (en) * 1994-09-06 1997-01-21 International Business Machines Corporation Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module
US5521434A (en) * 1994-10-17 1996-05-28 International Business Machines Corporation Semiconductor chip and electronic module with integrated surface interconnects/components
US5818112A (en) * 1994-11-15 1998-10-06 Siemens Aktiengesellschaft Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit
US5701037A (en) * 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
US5609772A (en) * 1995-06-05 1997-03-11 International Business Machines Corporation Cube maskless lead open process using chemical mechanical polish/lead-tip expose process
US5719745A (en) * 1995-07-12 1998-02-17 International Business Machines Corporation Extended surface cooling for chip stack applications
US5648684A (en) * 1995-07-26 1997-07-15 International Business Machines Corporation Endcap chip with conductive, monolithic L-connect for multichip stack
DE19543540C1 (de) 1995-11-22 1996-11-21 Siemens Ag Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür
US5763943A (en) * 1996-01-29 1998-06-09 International Business Machines Corporation Electronic modules with integral sensor arrays
US5952725A (en) 1996-02-20 1999-09-14 Micron Technology, Inc. Stacked semiconductor devices
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
US5781413A (en) * 1996-09-30 1998-07-14 International Business Machines Corporation Method and apparatus for directing the input/output connection of integrated circuit chip cube configurations
US5815374A (en) * 1996-09-30 1998-09-29 International Business Machines Corporation Method and apparatus for redirecting certain input/output connections of integrated circuit chip configurations
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
US6075287A (en) * 1997-04-03 2000-06-13 International Business Machines Corporation Integrated, multi-chip, thermally conductive packaging device and methodology
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5793103A (en) * 1997-05-08 1998-08-11 International Business Machines Corporation Insulated cube with exposed wire lead
JP3501644B2 (ja) * 1998-02-02 2004-03-02 日本電気株式会社 半導体パッケージの熱抵抗計算方法および記録媒体および熱抵抗計算装置
EP1135802A4 (en) * 1998-07-27 2004-08-25 Reveo Inc THREE-DIMENSIONAL PACKAGING TECHNOLOGY FOR MULTI-LAYER INTEGRATED CIRCUITS
JP2001352035A (ja) * 2000-06-07 2001-12-21 Sony Corp 多層半導体装置の組立治具及び多層半導体装置の製造方法
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6743972B2 (en) 2000-09-18 2004-06-01 Chris Macris Heat dissipating IC devices
US6818817B2 (en) 2000-09-18 2004-11-16 Chris Macris Heat dissipating silicon-on-insulator structures
US6727422B2 (en) 2000-09-18 2004-04-27 Chris Macris Heat sink/heat spreader structures and methods of manufacture
US20030002267A1 (en) * 2001-06-15 2003-01-02 Mantz Frank E. I/O interface structure
US6945054B1 (en) * 2002-10-04 2005-09-20 Richard S. Norman Method and apparatus for cooling microelectronic complexes including multiple discrete functional modules
US6856010B2 (en) * 2002-12-05 2005-02-15 Staktek Group L.P. Thin scale outline package
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP2004311464A (ja) 2003-04-01 2004-11-04 Renesas Technology Corp 半導体装置
US20040207990A1 (en) * 2003-04-21 2004-10-21 Rose Andrew C. Stair-step signal routing
JP4238998B2 (ja) 2004-03-18 2009-03-18 セイコーエプソン株式会社 電気デバイス
US7999383B2 (en) 2006-07-21 2011-08-16 Bae Systems Information And Electronic Systems Integration Inc. High speed, high density, low power die interconnect system
US7936058B2 (en) * 2007-05-14 2011-05-03 Kabushiki Kaisha Nihon Micronics Stacked package and method for forming stacked package
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8772920B2 (en) * 2011-07-13 2014-07-08 Oracle International Corporation Interconnection and assembly of three-dimensional chip packages
MY192051A (en) * 2016-12-29 2022-07-25 Intel Corp Stacked dice systems

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243660A (en) * 1966-03-29 Electroni c module as sbmbly
GB1083200A (en) * 1966-08-17 1967-09-13 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
DE1591105A1 (de) * 1967-12-06 1970-09-24 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Festkoerperschaltungen
US3705332A (en) * 1970-06-25 1972-12-05 Howard L Parks Electrical circuit packaging structure and method of fabrication thereof
US3704455A (en) * 1971-02-01 1972-11-28 Alfred D Scarbrough 3d-coaxial memory construction and method of making
US4283754A (en) * 1979-03-26 1981-08-11 Bunker Ramo Corporation Cooling system for multiwafer high density circuit
US4546406A (en) * 1980-09-25 1985-10-08 Texas Instruments Incorporated Electronic circuit interconnection system
JPS5839055A (ja) * 1981-08-31 1983-03-07 Matsushita Electric Ind Co Ltd 半導体装置
US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
JPS5890744A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS5891664A (ja) * 1981-11-26 1983-05-31 Mitsubishi Electric Corp 積層構造半導体装置
US4628407A (en) * 1983-04-22 1986-12-09 Cray Research, Inc. Circuit module with enhanced heat transfer and distribution
US4514784A (en) * 1983-04-22 1985-04-30 Cray Research, Inc. Interconnected multiple circuit module
DE3381187D1 (de) * 1983-11-07 1990-03-08 Irvine Sensors Corp Detektoranordnungsstruktur und -herstellung.
JPS6118164A (ja) * 1984-07-04 1986-01-27 Mitsubishi Electric Corp 半導体装置
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module

Also Published As

Publication number Publication date
KR870000760A (ko) 1987-02-20
JPH0528503B2 (https=) 1993-04-26
DE3685612D1 (de) 1992-07-16
EP0206696B1 (en) 1992-06-10
JPS61288455A (ja) 1986-12-18
US5051865A (en) 1991-09-24
EP0206696A2 (en) 1986-12-30
DE3685612T2 (de) 1993-01-28
EP0206696A3 (en) 1988-08-10

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