JPH0512868B2 - - Google Patents

Info

Publication number
JPH0512868B2
JPH0512868B2 JP59110244A JP11024484A JPH0512868B2 JP H0512868 B2 JPH0512868 B2 JP H0512868B2 JP 59110244 A JP59110244 A JP 59110244A JP 11024484 A JP11024484 A JP 11024484A JP H0512868 B2 JPH0512868 B2 JP H0512868B2
Authority
JP
Japan
Prior art keywords
layer
base layer
source
mosfet
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59110244A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60254658A (ja
Inventor
Akio Nakagawa
Tsuneo Tsukagoshi
Yoshihiro Yamaguchi
Kiminori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP59110244A priority Critical patent/JPS60254658A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to US06/738,188 priority patent/US4672407A/en
Priority to DE19853519389 priority patent/DE3519389A1/de
Priority to GB08513599A priority patent/GB2161649B/en
Priority to DE3546745A priority patent/DE3546745C2/de
Publication of JPS60254658A publication Critical patent/JPS60254658A/ja
Priority to US07/019,337 priority patent/US4782372A/en
Priority to US07/116,357 priority patent/US4881120A/en
Priority to US07/146,405 priority patent/US5093701A/en
Priority to US07/205,365 priority patent/US4928155A/en
Priority to US07/712,997 priority patent/US5086323A/en
Priority to US07/799,311 priority patent/US5286984A/en
Publication of JPH0512868B2 publication Critical patent/JPH0512868B2/ja
Priority to US08/261,254 priority patent/US5780887A/en
Priority to US09/104,326 priority patent/US6025622A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
JP59110244A 1984-05-30 1984-05-30 導電変調型ｍｏｓｆｅｔ Granted JPS60254658A (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP59110244A JPS60254658A (ja) 1984-05-30 1984-05-30 導電変調型ｍｏｓｆｅｔ
US06/738,188 US4672407A (en) 1984-05-30 1985-05-28 Conductivity modulated MOSFET
DE19853519389 DE3519389A1 (de) 1984-05-30 1985-05-30 Mosfet mit veraenderlicher leitfaehigkeit
GB08513599A GB2161649B (en) 1984-05-30 1985-05-30 Conductivity modulated mosfet
DE3546745A DE3546745C2 (de) 1984-05-30 1985-05-30 Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
US07/019,337 US4782372A (en) 1984-05-30 1987-02-26 Lateral conductivity modulated MOSFET
US07/116,357 US4881120A (en) 1984-05-30 1987-11-04 Conductive modulated MOSFET
US07/146,405 US5093701A (en) 1984-05-30 1988-01-21 Conductivity modulated mosfet
US07/205,365 US4928155A (en) 1984-05-30 1988-06-10 Lateral conductivity modulated MOSFET
US07/712,997 US5086323A (en) 1984-05-30 1991-06-10 Conductivity modulated mosfet
US07/799,311 US5286984A (en) 1984-05-30 1991-11-27 Conductivity modulated MOSFET
US08/261,254 US5780887A (en) 1984-05-30 1994-06-14 Conductivity modulated MOSFET
US09/104,326 US6025622A (en) 1984-05-30 1998-06-25 Conductivity modulated MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59110244A JPS60254658A (ja) 1984-05-30 1984-05-30 導電変調型ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
JPS60254658A JPS60254658A (ja) 1985-12-16
JPH0512868B2 true JPH0512868B2 (enrdf_load_stackoverflow) 1993-02-19

Family

ID=14530759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59110244A Granted JPS60254658A (ja) 1984-05-30 1984-05-30 導電変調型ｍｏｓｆｅｔ

Country Status (1)

Country Link
JP (1) JPS60254658A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212396A (en) * 1983-11-30 1993-05-18 Kabushiki Kaisha Toshiba Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations
US4641162A (en) * 1985-12-11 1987-02-03 General Electric Company Current limited insulated gate device
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
JPS62282465A (ja) * 1986-03-05 1987-12-08 イクシス・コーポレーション モノリシツク半導体デバイスおよびその製造方法
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
US6204533B1 (en) * 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
US6492663B1 (en) 1999-05-20 2002-12-10 Richard A. Blanchard Universal source geometry for MOS-gated power devices
JP4839578B2 (ja) * 2004-04-26 2011-12-21 富士電機株式会社 横形半導体装置
JP4830263B2 (ja) * 2004-04-26 2011-12-07 富士電機株式会社 高耐圧絶縁ゲート形バイポーラトランジスタ
JP2007049061A (ja) * 2005-08-12 2007-02-22 Toshiba Corp 半導体装置
JP6206599B2 (ja) * 2014-09-11 2017-10-04 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507820A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee

Also Published As

Publication number Publication date
JPS60254658A (ja) 1985-12-16

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Legal Events

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EXPY Cancellation because of completion of term