JPH0424799B2 - - Google Patents

Info

Publication number
JPH0424799B2
JPH0424799B2 JP62163876A JP16387687A JPH0424799B2 JP H0424799 B2 JPH0424799 B2 JP H0424799B2 JP 62163876 A JP62163876 A JP 62163876A JP 16387687 A JP16387687 A JP 16387687A JP H0424799 B2 JPH0424799 B2 JP H0424799B2
Authority
JP
Japan
Prior art keywords
line
transistor
transistors
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62163876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63119095A (ja
Inventor
Jei Matsukueruroi Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS63119095A publication Critical patent/JPS63119095A/ja
Publication of JPH0424799B2 publication Critical patent/JPH0424799B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP62163876A 1984-07-26 1987-06-30 半導体メモリ装置のためのセンスアンプ Granted JPS63119095A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/634,898 US4658377A (en) 1984-07-26 1984-07-26 Dynamic memory array with segmented bit lines
US634899 1984-07-26
US634898 1984-07-26

Publications (2)

Publication Number Publication Date
JPS63119095A JPS63119095A (ja) 1988-05-23
JPH0424799B2 true JPH0424799B2 (OSRAM) 1992-04-28

Family

ID=24545600

Family Applications (3)

Application Number Title Priority Date Filing Date
JP60164984A Granted JPS61229299A (ja) 1984-07-26 1985-07-25 半導体メモリ装置
JP62163874A Pending JPS63200394A (ja) 1984-07-26 1987-06-30 半導体メモリ装置
JP62163876A Granted JPS63119095A (ja) 1984-07-26 1987-06-30 半導体メモリ装置のためのセンスアンプ

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP60164984A Granted JPS61229299A (ja) 1984-07-26 1985-07-25 半導体メモリ装置
JP62163874A Pending JPS63200394A (ja) 1984-07-26 1987-06-30 半導体メモリ装置

Country Status (2)

Country Link
US (1) US4658377A (OSRAM)
JP (3) JPS61229299A (OSRAM)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
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JPS61292292A (ja) * 1985-06-19 1986-12-23 Toshiba Corp 半導体記憶装置
JPS6142795A (ja) * 1984-08-03 1986-03-01 Toshiba Corp 半導体記憶装置の行デコ−ダ系
JPS6192495A (ja) * 1984-10-11 1986-05-10 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
EP0199458B1 (en) * 1985-03-18 1990-09-05 Nec Corporation Memory circuit having an improved writing scheme
JPS61217994A (ja) * 1985-03-25 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
US5055717A (en) * 1986-05-30 1991-10-08 Texas Instruments Incorporated Data selector circuit and method of selecting format of data output from plural registers
JPS63239675A (ja) * 1986-11-27 1988-10-05 Toshiba Corp 半導体記憶装置
NL8701738A (nl) * 1987-07-23 1989-02-16 Philips Nv Werkwijze voor het opslaan van een topologisch netwerk in een geheugen en voor het opzoeken van een 2-cel uit dat netwerk, alsmede inrichting voor het uitvoeren van de werkwijze voor het opzoeken.
JPS6457495A (en) * 1987-08-28 1989-03-03 Hitachi Ltd Semiconductor memory device
US5184321A (en) * 1988-12-06 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device comprising a plurality of memory arrays with improved peripheral circuit location and interconnection arrangement
JPH0834296B2 (ja) * 1988-12-06 1996-03-29 三菱電機株式会社 半導体記憶装置
JPH0775118B2 (ja) * 1989-03-20 1995-08-09 三菱電機株式会社 半導体記憶装置
JPH02246099A (ja) * 1989-03-20 1990-10-01 Hitachi Ltd 大規模半導体集積回路装置とその欠陥救済法
JPH02246087A (ja) * 1989-03-20 1990-10-01 Hitachi Ltd 半導体記憶装置ならびにその冗長方式及びレイアウト方式
US5089993B1 (en) * 1989-09-29 1998-12-01 Texas Instruments Inc Memory module arranged for data and parity bits
NL8902831A (nl) * 1989-11-16 1991-06-17 Philips Nv Luidsprekersysteem bevattende een helmholtz resonator gekoppeld met een akoestische buis.
JPH03157892A (ja) * 1989-11-16 1991-07-05 Sanyo Electric Co Ltd 半導体記憶装置
EP0454998B1 (en) * 1990-03-28 1995-11-08 Nec Corporation Semiconductor memory device
DE69122293T2 (de) * 1990-04-27 1997-04-24 Nippon Electric Co Halbleiterspeicheranordnung
JPH04362592A (ja) * 1991-06-08 1992-12-15 Hitachi Ltd 半導体記憶装置
US5475642A (en) * 1992-06-23 1995-12-12 Taylor; David L. Dynamic random access memory with bit line preamp/driver
JPH06119230A (ja) * 1992-10-06 1994-04-28 Fujitsu Ltd 半導体記憶装置
JP3672946B2 (ja) * 1993-11-30 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
JPH07230696A (ja) * 1993-12-21 1995-08-29 Toshiba Corp 半導体記憶装置
JP3666671B2 (ja) * 1994-12-20 2005-06-29 株式会社日立製作所 半導体装置
KR0154719B1 (ko) * 1995-08-24 1998-12-01 김광호 집적도를 높인 반도체 메모리 장치
US5836007A (en) * 1995-09-14 1998-11-10 International Business Machines Corporation Methods and systems for improving memory component size and access speed including splitting bit lines and alternate pre-charge/access cycles
DE69520580T2 (de) * 1995-09-29 2001-10-04 Stmicroelectronics S.R.L., Agrate Brianza Hierarchische Speicheranordnung
US6097061A (en) * 1998-03-30 2000-08-01 Advanced Micro Devices, Inc. Trenched gate metal oxide semiconductor device and method
KR100335267B1 (ko) 1998-06-29 2002-09-25 주식회사 하이닉스반도체 센싱전류의소모를줄이는반도체메모리장치
DE19908205C1 (de) * 1999-02-25 2000-04-13 Siemens Ag Integrierter Speicher
KR100516301B1 (ko) * 2003-03-05 2005-09-21 주식회사 하이닉스반도체 플래시 메모리의 뱅크 분할 장치
US7313023B2 (en) * 2005-03-11 2007-12-25 Sandisk Corporation Partition of non-volatile memory array to reduce bit line capacitance
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
JP4909619B2 (ja) * 2006-04-13 2012-04-04 パナソニック株式会社 半導体記憶装置
US7933142B2 (en) * 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) * 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7477551B2 (en) * 2006-11-08 2009-01-13 Texas Instruments Incorporated Systems and methods for reading data from a memory array
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
US8518774B2 (en) * 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) * 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) * 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) * 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
WO2010102106A2 (en) * 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) * 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8139418B2 (en) * 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) * 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) * 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) * 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) * 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) * 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) * 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8526264B2 (en) * 2011-06-29 2013-09-03 Stmicroelectronics International N.V. Partial write on a low power memory architecture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152128A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Minute signal detection circuit
JPS54112131A (en) * 1978-02-23 1979-09-01 Nec Corp Sense amplifier circuit of mos memory
DE2951945A1 (de) * 1979-12-22 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik
JPS5832789B2 (ja) * 1980-07-18 1983-07-15 富士通株式会社 半導体メモリ
JPH0670878B2 (ja) * 1982-11-30 1994-09-07 富士通株式会社 半導体記憶装置
JPS60234296A (ja) * 1984-05-07 1985-11-20 Hitachi Ltd 半導体記憶装置
JPS60253096A (ja) * 1984-05-30 1985-12-13 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US4658377A (en) 1987-04-14
JPH0120515B2 (OSRAM) 1989-04-17
JPS61229299A (ja) 1986-10-13
JPS63200394A (ja) 1988-08-18
JPS63119095A (ja) 1988-05-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term