JPH0345550B2 - - Google Patents

Info

Publication number
JPH0345550B2
JPH0345550B2 JP57127517A JP12751782A JPH0345550B2 JP H0345550 B2 JPH0345550 B2 JP H0345550B2 JP 57127517 A JP57127517 A JP 57127517A JP 12751782 A JP12751782 A JP 12751782A JP H0345550 B2 JPH0345550 B2 JP H0345550B2
Authority
JP
Japan
Prior art keywords
semiconductor
region
capacitor
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57127517A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5919366A (ja
Inventor
Mitsunori Ketsusako
Masanobu Myao
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57127517A priority Critical patent/JPS5919366A/ja
Publication of JPS5919366A publication Critical patent/JPS5919366A/ja
Publication of JPH0345550B2 publication Critical patent/JPH0345550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57127517A 1982-07-23 1982-07-23 半導体記憶装置 Granted JPS5919366A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57127517A JPS5919366A (ja) 1982-07-23 1982-07-23 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127517A JPS5919366A (ja) 1982-07-23 1982-07-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5919366A JPS5919366A (ja) 1984-01-31
JPH0345550B2 true JPH0345550B2 (cs) 1991-07-11

Family

ID=14961965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127517A Granted JPS5919366A (ja) 1982-07-23 1982-07-23 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5919366A (cs)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
EP0168528B1 (de) * 1984-04-25 1989-03-08 Siemens Aktiengesellschaft Ein-Transistor-Speicherzelle für hochintegrierte dynamische Halbleiterspeicher und Verfahren zu ihrer Herstellung
JPS60257560A (ja) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp 半導体メモリ装置
JPS614271A (ja) * 1984-06-14 1986-01-10 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン メモリセル
US4672410A (en) * 1984-07-12 1987-06-09 Nippon Telegraph & Telephone Semiconductor memory device with trench surrounding each memory cell
JPS6123360A (ja) * 1984-07-12 1986-01-31 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
US4683486A (en) * 1984-09-24 1987-07-28 Texas Instruments Incorporated dRAM cell and array
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US4651184A (en) * 1984-08-31 1987-03-17 Texas Instruments Incorporated Dram cell and array
JPS61179571A (ja) * 1984-09-27 1986-08-12 テキサス　インスツルメンツ　インコ−ポレイテツド メモリセルおよびそのアレイ
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
JPH0680805B2 (ja) * 1985-05-29 1994-10-12 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPS61294854A (ja) * 1985-06-22 1986-12-25 Toshiba Corp 半導体装置
JPH0682799B2 (ja) * 1985-06-25 1994-10-19 沖電気工業株式会社 半導体記憶装置
JPS6237711A (ja) * 1985-08-12 1987-02-18 Yamada Mie 流量制御装置
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
US4910567A (en) * 1986-02-26 1990-03-20 Texas Instruments, Incorporated Dram cell and method for fabricating
US4686552A (en) * 1986-05-20 1987-08-11 Motorola, Inc. Integrated circuit trench cell
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4816884A (en) * 1987-07-20 1989-03-28 International Business Machines Corporation High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor
US4833516A (en) * 1987-08-03 1989-05-23 International Business Machines Corporation High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JPH07105477B2 (ja) * 1988-05-28 1995-11-13 富士通株式会社 半導体装置及びその製造方法
US4980734A (en) * 1988-05-31 1990-12-25 Texas Instruments Incorporated Dynamic memory cell using silicon-on-insulator transistor with trench capacitor
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US4927779A (en) * 1988-08-10 1990-05-22 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856266B2 (ja) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド Ｍｏｓメモリ
JPS5636164U (cs) * 1979-08-27 1981-04-07
JPS57103350A (en) * 1980-12-18 1982-06-26 Mitsubishi Electric Corp Manufacture of semiconductor memory

Also Published As

Publication number Publication date
JPS5919366A (ja) 1984-01-31

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