JPH0345488B2 - - Google Patents
Info
- Publication number
- JPH0345488B2 JPH0345488B2 JP59007576A JP757684A JPH0345488B2 JP H0345488 B2 JPH0345488 B2 JP H0345488B2 JP 59007576 A JP59007576 A JP 59007576A JP 757684 A JP757684 A JP 757684A JP H0345488 B2 JPH0345488 B2 JP H0345488B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- water
- transparent
- transparent conductive
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
- Contacts (AREA)
- Manufacturing Of Electric Cables (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacture Of Switches (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59007576A JPS60150508A (ja) | 1984-01-18 | 1984-01-18 | 透明電極基板の製造方法 |
| DE8585900743T DE3570149D1 (en) | 1984-01-18 | 1985-01-18 | Method of manufacturing transparent electrode substrate |
| EP85900743A EP0178327B1 (en) | 1984-01-18 | 1985-01-18 | Method of manufacturing transparent electrode substrate |
| US06/778,361 US4663192A (en) | 1984-01-18 | 1985-01-18 | Production of transparent electrode substrate |
| PCT/JP1985/000018 WO1985003378A1 (fr) | 1984-01-18 | 1985-01-18 | Procede de fabrication d'un substrat d'electrode transparent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59007576A JPS60150508A (ja) | 1984-01-18 | 1984-01-18 | 透明電極基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60150508A JPS60150508A (ja) | 1985-08-08 |
| JPH0345488B2 true JPH0345488B2 (https=) | 1991-07-11 |
Family
ID=11669632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59007576A Granted JPS60150508A (ja) | 1984-01-18 | 1984-01-18 | 透明電極基板の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4663192A (https=) |
| EP (1) | EP0178327B1 (https=) |
| JP (1) | JPS60150508A (https=) |
| DE (1) | DE3570149D1 (https=) |
| WO (1) | WO1985003378A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0193820A3 (en) * | 1985-02-27 | 1988-01-07 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Method for forming a thin film pattern |
| JPH01146213A (ja) * | 1987-12-01 | 1989-06-08 | Fuji Photo Film Co Ltd | 導電膜の製造方法 |
| JP2572245B2 (ja) * | 1987-12-01 | 1997-01-16 | 富士写真フイルム株式会社 | 導電膜の製造方法 |
| US5059454A (en) * | 1989-04-26 | 1991-10-22 | Flex Products, Inc. | Method for making patterned thin film |
| JP4892803B2 (ja) * | 2001-08-31 | 2012-03-07 | 凸版印刷株式会社 | 導電パターン膜の製造方法 |
| TW573204B (en) * | 2001-09-12 | 2004-01-21 | Sipix Imaging Inc | An improved electrophoretic display with gating electrodes |
| TWI229763B (en) | 2001-10-29 | 2005-03-21 | Sipix Imaging Inc | An improved electrophoretic display with holding electrodes |
| US7156945B2 (en) * | 2002-04-24 | 2007-01-02 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure for in-mold decoration |
| TWI268813B (en) * | 2002-04-24 | 2006-12-21 | Sipix Imaging Inc | Process for forming a patterned thin film conductive structure on a substrate |
| US7972472B2 (en) * | 2002-04-24 | 2011-07-05 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure for in-mold decoration |
| TWI240842B (en) * | 2002-04-24 | 2005-10-01 | Sipix Imaging Inc | Matrix driven electrophoretic display with multilayer back plane |
| US7261920B2 (en) * | 2002-04-24 | 2007-08-28 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure on a substrate |
| US8002948B2 (en) * | 2002-04-24 | 2011-08-23 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure on a substrate |
| WO2004104684A1 (ja) * | 2003-05-22 | 2004-12-02 | Bridgestone Corporation | 画像表示装置及びその製造に用いる基板重ね合わせ装置 |
| JP4573673B2 (ja) * | 2005-02-28 | 2010-11-04 | 富士フイルム株式会社 | 水蒸気バリアフィルム |
| US8557076B2 (en) * | 2005-06-24 | 2013-10-15 | Shih-Chuan Tsai | Method of fabricating an environmental friendly cladding layer |
| JP4856498B2 (ja) * | 2005-08-26 | 2012-01-18 | 三井化学株式会社 | フレキシブルディスプレイ用電極基板 |
| JP4775799B2 (ja) * | 2006-07-14 | 2011-09-21 | 東レフィルム加工株式会社 | 金属薄膜転写材料用シートの製造方法 |
| WO2011053250A1 (en) * | 2009-10-26 | 2011-05-05 | Agency For Science, Technology And Research | Photoelectrode with a polymer layer |
| JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | 酸化アンチモン膜の原子層堆積 |
| JP2013157343A (ja) * | 2012-01-26 | 2013-08-15 | Tokyo Seimitsu Co Ltd | ウェーハ処理方法及びシステム |
| WO2017213043A1 (ja) * | 2016-06-10 | 2017-12-14 | 日東電工株式会社 | 透明導電性フィルムおよびタッチパネル |
| JP6789801B2 (ja) * | 2016-06-10 | 2020-11-25 | 日東電工株式会社 | 透明導電性フィルムおよびタッチパネル |
| KR102432417B1 (ko) * | 2016-06-10 | 2022-08-12 | 닛토덴코 가부시키가이샤 | 투명 도전성 필름 및 터치 패널 |
| US10676809B2 (en) | 2018-06-20 | 2020-06-09 | Lockheed Martin Corporation | Methods and systems for generating patterns on flexible substrates |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129877A (https=) * | 1974-09-06 | 1976-03-13 | Fuji Photo Film Co Ltd | |
| JPS5156966A (ja) * | 1974-11-13 | 1976-05-19 | Tokyo Cosmos Electric | Tomeidodenmakupataanno keiseihoho |
| US3985597A (en) * | 1975-05-01 | 1976-10-12 | International Business Machines Corporation | Process for forming passivated metal interconnection system with a planar surface |
| JPS51143892A (en) * | 1975-06-05 | 1976-12-10 | Casio Comput Co Ltd | Process for forming a transparent conductive film |
| JPS5215267A (en) * | 1975-07-28 | 1977-02-04 | Hitachi Ltd | Fine processing method |
| JPS603724B2 (ja) * | 1975-09-17 | 1985-01-30 | セイコーインスツルメンツ株式会社 | 透明導電性パタ−ンの形成方法 |
| JPS5929926B2 (ja) * | 1975-09-30 | 1984-07-24 | 株式会社東芝 | 液晶表示器の製造方法 |
| JPS54150417A (en) * | 1978-05-19 | 1979-11-26 | Hitachi Ltd | Production of transparent conductive layer |
| JPS6019608B2 (ja) * | 1978-10-03 | 1985-05-17 | シャープ株式会社 | 電極パタ−ン形成方法 |
| JPS5610450A (en) * | 1979-07-05 | 1981-02-02 | Teijin Ltd | Transparent conductive film |
| US4307179A (en) * | 1980-07-03 | 1981-12-22 | International Business Machines Corporation | Planar metal interconnection system and process |
| JPS5792704A (en) * | 1980-12-01 | 1982-06-09 | Tokyo Denshi Kagaku Kk | Method of forming pattern of metallic oxide film |
-
1984
- 1984-01-18 JP JP59007576A patent/JPS60150508A/ja active Granted
-
1985
- 1985-01-18 WO PCT/JP1985/000018 patent/WO1985003378A1/ja not_active Ceased
- 1985-01-18 US US06/778,361 patent/US4663192A/en not_active Expired - Lifetime
- 1985-01-18 DE DE8585900743T patent/DE3570149D1/de not_active Expired
- 1985-01-18 EP EP85900743A patent/EP0178327B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60150508A (ja) | 1985-08-08 |
| EP0178327B1 (en) | 1989-05-10 |
| US4663192A (en) | 1987-05-05 |
| WO1985003378A1 (fr) | 1985-08-01 |
| DE3570149D1 (en) | 1989-06-15 |
| EP0178327A4 (en) | 1986-06-05 |
| EP0178327A1 (en) | 1986-04-23 |
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