|
US6103055A
(en)
*
|
1986-04-18 |
2000-08-15 |
Applied Materials, Inc. |
System for processing substrates
|
|
US5308431A
(en)
*
|
1986-04-18 |
1994-05-03 |
General Signal Corporation |
System providing multiple processing of substrates
|
|
EP0246453A3
(en)
*
|
1986-04-18 |
1989-09-06 |
General Signal Corporation |
Novel multiple-processing and contamination-free plasma etching system
|
|
US5102495A
(en)
*
|
1986-04-18 |
1992-04-07 |
General Signal Corporation |
Method providing multiple-processing of substrates
|
|
US5013385A
(en)
*
|
1986-04-18 |
1991-05-07 |
General Signal Corporation |
Quad processor
|
|
US5000113A
(en)
|
1986-12-19 |
1991-03-19 |
Applied Materials, Inc. |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
|
|
JP2545591B2
(ja)
*
|
1988-09-30 |
1996-10-23 |
国際電気株式会社 |
ウェーハ処理装置
|
|
US5019233A
(en)
*
|
1988-10-31 |
1991-05-28 |
Eaton Corporation |
Sputtering system
|
|
US4952299A
(en)
*
|
1988-10-31 |
1990-08-28 |
Eaton Corporation |
Wafer handling apparatus
|
|
EP0367423A3
(en)
*
|
1988-10-31 |
1991-01-09 |
Eaton Corporation |
Vacuum deposition system
|
|
US5076205A
(en)
*
|
1989-01-06 |
1991-12-31 |
General Signal Corporation |
Modular vapor processor system
|
|
JP2528708B2
(ja)
*
|
1989-03-14 |
1996-08-28 |
富士通株式会社 |
半導体製造装置
|
|
JPH0793348B2
(ja)
*
|
1989-05-19 |
1995-10-09 |
アプライド マテリアルズ インコーポレーテッド |
多重チャンバ真空式処理装置及び多重チャンバ真空式半導体ウェーハ処理装置
|
|
US5186718A
(en)
*
|
1989-05-19 |
1993-02-16 |
Applied Materials, Inc. |
Staged-vacuum wafer processing system and method
|
|
JP2803170B2
(ja)
*
|
1989-06-07 |
1998-09-24 |
日本電気株式会社 |
半導体ウェハー搬送装置
|
|
EP0408216A3
(en)
*
|
1989-07-11 |
1991-09-18 |
Hitachi, Ltd. |
Method for processing wafers and producing semiconductor devices and apparatus for producing the same
|
|
JP3466607B2
(ja)
*
|
1989-09-13 |
2003-11-17 |
ソニー株式会社 |
スパッタリング装置
|
|
ES2130295T3
(es)
*
|
1989-10-20 |
1999-07-01 |
Applied Materials Inc |
Aparato de tipo robot.
|
|
US5447409A
(en)
*
|
1989-10-20 |
1995-09-05 |
Applied Materials, Inc. |
Robot assembly
|
|
EP1069207A3
(en)
*
|
1990-01-08 |
2003-05-14 |
Lsi Logic Corporation |
In-situ etch method for for cleaning a CVD chamber
|
|
EP0448763A1
(de)
*
|
1990-03-30 |
1991-10-02 |
Siemens Aktiengesellschaft |
Verfahren und Vorrichtung zur Herstellung von leitenden Schichten oder Strukturen für höchstintegrierte Schaltungen
|
|
US5478780A
(en)
*
|
1990-03-30 |
1995-12-26 |
Siemens Aktiengesellschaft |
Method and apparatus for producing conductive layers or structures for VLSI circuits
|
|
EP0452889A3
(en)
*
|
1990-04-16 |
1992-01-22 |
Applied Materials, Inc. |
Process for forming titanium silicide on a semiconductor wafer
|
|
JPH0677216A
(ja)
*
|
1990-09-28 |
1994-03-18 |
Applied Materials Inc |
蒸着薄膜の障壁特性を高めるプラズマアニーリング法
|
|
JP2751975B2
(ja)
*
|
1991-12-20 |
1998-05-18 |
株式会社日立製作所 |
半導体処理装置のロードロック室
|
|
NL9200446A
(nl)
*
|
1992-03-10 |
1993-10-01 |
Tempress B V |
Inrichting voor het behandelen van microschakeling-schijven (wafers).
|
|
US5387546A
(en)
*
|
1992-06-22 |
1995-02-07 |
Canon Sales Co., Inc. |
Method for manufacturing a semiconductor device
|
|
US5248371A
(en)
*
|
1992-08-13 |
1993-09-28 |
General Signal Corporation |
Hollow-anode glow discharge apparatus
|
|
US5376862A
(en)
*
|
1993-01-28 |
1994-12-27 |
Applied Materials, Inc. |
Dual coaxial magnetic couplers for vacuum chamber robot assembly
|
|
DE69323716T2
(de)
|
1993-01-28 |
1999-08-19 |
Applied Materials |
Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer
|
|
EP0624896B1
(en)
*
|
1993-05-13 |
1999-09-22 |
Applied Materials, Inc. |
Contamination control in plasma contouring the plasma sheath using materials of differing rf impedances
|
|
DE69401863T2
(de)
*
|
1993-07-15 |
1997-07-03 |
Applied Materials Inc |
Verbesserte Suszeptor Ausführung
|
|
EP0634784A1
(en)
*
|
1993-07-16 |
1995-01-18 |
Applied Materials, Inc. |
Variable speed wafer exchange robot
|
|
TW406861U
(en)
|
1994-07-28 |
2000-09-21 |
Semiconductor Energy Lab |
Laser processing system
|
|
WO1996025760A1
(en)
*
|
1995-02-15 |
1996-08-22 |
Hitachi, Ltd. |
Method and device for manufacturing semiconductor
|
|
US5672239A
(en)
*
|
1995-05-10 |
1997-09-30 |
Tegal Corporation |
Integrated semiconductor wafer processing system
|
|
US5746460A
(en)
*
|
1995-12-08 |
1998-05-05 |
Applied Materials, Inc. |
End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector
|
|
US6267423B1
(en)
|
1995-12-08 |
2001-07-31 |
Applied Materials, Inc. |
End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector
|
|
US5820692A
(en)
*
|
1996-01-16 |
1998-10-13 |
Fsi Interntional |
Vacuum compatible water vapor and rinse process module
|
|
JP3769802B2
(ja)
*
|
1996-02-09 |
2006-04-26 |
株式会社日立製作所 |
半導体装置の製造方法
|
|
JPH09323276A
(ja)
*
|
1996-06-03 |
1997-12-16 |
Toyota Autom Loom Works Ltd |
搬送装置及びロボットアーム
|
|
US6152070A
(en)
*
|
1996-11-18 |
2000-11-28 |
Applied Materials, Inc. |
Tandem process chamber
|
|
JPH10163295A
(ja)
*
|
1996-11-26 |
1998-06-19 |
Tokyo Electron Ltd |
ウエハ搬送装置
|
|
TW539918B
(en)
|
1997-05-27 |
2003-07-01 |
Tokyo Electron Ltd |
Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
|
|
US6068441A
(en)
*
|
1997-11-21 |
2000-05-30 |
Asm America, Inc. |
Substrate transfer system for semiconductor processing equipment
|
|
US7253109B2
(en)
|
1997-11-26 |
2007-08-07 |
Applied Materials, Inc. |
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
|
|
JP4947834B2
(ja)
|
1997-11-26 |
2012-06-06 |
アプライド マテリアルズ インコーポレイテッド |
ダメージフリー被覆刻設堆積法
|
|
JP3286240B2
(ja)
*
|
1998-02-09 |
2002-05-27 |
日本エー・エス・エム株式会社 |
半導体処理用ロードロック装置及び方法
|
|
KR100265287B1
(ko)
*
|
1998-04-21 |
2000-10-02 |
윤종용 |
반도체소자 제조용 식각설비의 멀티챔버 시스템
|
|
US6277753B1
(en)
|
1998-09-28 |
2001-08-21 |
Supercritical Systems Inc. |
Removal of CMP residue from semiconductors using supercritical carbon dioxide process
|
|
DE19952194A1
(de)
|
1999-10-29 |
2001-05-17 |
Infineon Technologies Ag |
Anlage zur Bearbeitung von Wafern
|
|
WO2001046999A2
(en)
|
1999-11-02 |
2001-06-28 |
Tokyo Electron Limited |
Method and apparatus for supercritical processing of a workpiece
|
|
US6748960B1
(en)
|
1999-11-02 |
2004-06-15 |
Tokyo Electron Limited |
Apparatus for supercritical processing of multiple workpieces
|
|
EP1277233A2
(en)
|
2000-04-25 |
2003-01-22 |
Tokyo Electron Corporation |
Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
|
|
KR100750018B1
(ko)
|
2000-07-26 |
2007-08-16 |
동경 엘렉트론 주식회사 |
반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치
|
|
JP2003060005A
(ja)
*
|
2001-08-20 |
2003-02-28 |
Ulvac Japan Ltd |
真空処理装置
|
|
JP3883929B2
(ja)
|
2001-09-25 |
2007-02-21 |
大日本スクリーン製造株式会社 |
薄膜形成装置および薄膜形成方法
|
|
US7001468B1
(en)
|
2002-02-15 |
2006-02-21 |
Tokyo Electron Limited |
Pressure energized pressure vessel opening and closing device and method of providing therefor
|
|
US7387868B2
(en)
|
2002-03-04 |
2008-06-17 |
Tokyo Electron Limited |
Treatment of a dielectric layer using supercritical CO2
|
|
US7677859B2
(en)
*
|
2002-07-22 |
2010-03-16 |
Brooks Automation, Inc. |
Substrate loading and uploading station with buffer
|
|
GB2392309B
(en)
|
2002-08-22 |
2004-10-27 |
Leica Microsys Lithography Ltd |
Substrate loading and unloading apparatus
|
|
US7021635B2
(en)
|
2003-02-06 |
2006-04-04 |
Tokyo Electron Limited |
Vacuum chuck utilizing sintered material and method of providing thereof
|
|
US7225820B2
(en)
|
2003-02-10 |
2007-06-05 |
Tokyo Electron Limited |
High-pressure processing chamber for a semiconductor wafer
|
|
US7077917B2
(en)
|
2003-02-10 |
2006-07-18 |
Tokyo Electric Limited |
High-pressure processing chamber for a semiconductor wafer
|
|
US7270137B2
(en)
|
2003-04-28 |
2007-09-18 |
Tokyo Electron Limited |
Apparatus and method of securing a workpiece during high-pressure processing
|
|
US7163380B2
(en)
|
2003-07-29 |
2007-01-16 |
Tokyo Electron Limited |
Control of fluid flow in the processing of an object with a fluid
|
|
US7186093B2
(en)
|
2004-10-05 |
2007-03-06 |
Tokyo Electron Limited |
Method and apparatus for cooling motor bearings of a high pressure pump
|
|
US7491662B2
(en)
*
|
2004-05-17 |
2009-02-17 |
Hitachi Kokusai Electric Inc. |
Substrate processing apparatus
|
|
US7250374B2
(en)
|
2004-06-30 |
2007-07-31 |
Tokyo Electron Limited |
System and method for processing a substrate using supercritical carbon dioxide processing
|
|
US7307019B2
(en)
|
2004-09-29 |
2007-12-11 |
Tokyo Electron Limited |
Method for supercritical carbon dioxide processing of fluoro-carbon films
|
|
US7491036B2
(en)
|
2004-11-12 |
2009-02-17 |
Tokyo Electron Limited |
Method and system for cooling a pump
|
|
US7434590B2
(en)
|
2004-12-22 |
2008-10-14 |
Tokyo Electron Limited |
Method and apparatus for clamping a substrate in a high pressure processing system
|
|
US7140393B2
(en)
|
2004-12-22 |
2006-11-28 |
Tokyo Electron Limited |
Non-contact shuttle valve for flow diversion in high pressure systems
|
|
US7291565B2
(en)
|
2005-02-15 |
2007-11-06 |
Tokyo Electron Limited |
Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
|
|
US7435447B2
(en)
|
2005-02-15 |
2008-10-14 |
Tokyo Electron Limited |
Method and system for determining flow conditions in a high pressure processing system
|
|
US7767145B2
(en)
|
2005-03-28 |
2010-08-03 |
Toyko Electron Limited |
High pressure fourier transform infrared cell
|
|
US7380984B2
(en)
|
2005-03-28 |
2008-06-03 |
Tokyo Electron Limited |
Process flow thermocouple
|
|
US7494107B2
(en)
|
2005-03-30 |
2009-02-24 |
Supercritical Systems, Inc. |
Gate valve for plus-atmospheric pressure semiconductor process vessels
|
|
NL1028907C2
(nl)
*
|
2005-04-29 |
2006-10-31 |
Fico Bv |
Werkwijze en inrichting voor het aanvoeren en het afvoeren van dragers met elektronische componenten.
|
|
US7789971B2
(en)
|
2005-05-13 |
2010-09-07 |
Tokyo Electron Limited |
Treatment of substrate using functionalizing agent in supercritical carbon dioxide
|
|
US7524383B2
(en)
|
2005-05-25 |
2009-04-28 |
Tokyo Electron Limited |
Method and system for passivating a processing chamber
|
|
DE102005056323A1
(de)
*
|
2005-11-25 |
2007-05-31 |
Aixtron Ag |
Prozesskammermodul zum gleichzeitigen Abscheiden von Schichten auf mehreren Substraten
|
|
US7547897B2
(en)
|
2006-05-26 |
2009-06-16 |
Cree, Inc. |
High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation
|
|
WO2008140093A1
(ja)
*
|
2007-05-15 |
2008-11-20 |
Ulvac, Inc. |
搬送装置及びこれを用いた真空処理装置
|
|
WO2009034795A1
(ja)
*
|
2007-09-10 |
2009-03-19 |
Ulvac, Inc. |
基板搬送ロボット、真空処理装置
|
|
TWI499725B
(zh)
*
|
2010-12-30 |
2015-09-11 |
Au Optronics Corp |
潔淨風扇節能系統
|
|
JP5314789B2
(ja)
*
|
2012-06-13 |
2013-10-16 |
株式会社日立製作所 |
真空処理装置及び真空処理方法
|
|
WO2014025918A1
(en)
*
|
2012-08-08 |
2014-02-13 |
Applied Materials, Inc |
Linked vacuum processing tools and methods of using the same
|
|
CN111254418B
(zh)
*
|
2020-02-10 |
2020-12-29 |
深圳市拉普拉斯能源技术有限公司 |
一种pecvd镀膜机
|
|
CN114256124A
(zh)
*
|
2021-12-27 |
2022-03-29 |
无锡邑文电子科技有限公司 |
晶圆真空顶升装置以及半导体设备
|
|
CN119993867B
(zh)
*
|
2025-02-08 |
2025-10-31 |
西北电子装备技术研究所(中国电子科技集团公司第二研究所) |
集束型高真空晶圆键合设备
|