KR100873967B1 - 완충메카니즘을 갖는 반도체 제조장치 및 반도체 웨이퍼의완충방법 - Google Patents
완충메카니즘을 갖는 반도체 제조장치 및 반도체 웨이퍼의완충방법 Download PDFInfo
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- KR100873967B1 KR100873967B1 KR1020020043319A KR20020043319A KR100873967B1 KR 100873967 B1 KR100873967 B1 KR 100873967B1 KR 1020020043319 A KR1020020043319 A KR 1020020043319A KR 20020043319 A KR20020043319 A KR 20020043319A KR 100873967 B1 KR100873967 B1 KR 100873967B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 230000007246 mechanism Effects 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 44
- 230000003139 buffering effect Effects 0.000 title abstract description 28
- 235000012431 wafers Nutrition 0.000 title description 174
- 238000012546 transfer Methods 0.000 claims abstract description 70
- 238000012545 processing Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 230000003028 elevating effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (13)
- 반응기 내부에 대기하고 있는 반도체 웨이퍼를 수용하기 위한 완충메카니즘에 있어서,상기 반응기 내에 마련된 서셉터 주변에 적치되며 수평방향으로 회전하고, 상기 반도체 웨이퍼를 지지하기 위한 적어도 두 개의 지지수단;각각의 지지수단을 수직방향으로 지지하기 위한 각각의 하나의 샤프트수단;상기 샤프트수단에 연결된 각각의 지지수단을 회전시키기 위한 회전메카니즘; 및각각의 샤프트수단을 상하로 이동시키는 승강메카니즘을 포함하고,O-링을 더 포함하며, 상기 샤프트는 상기 회전메카니즘에 연결되고 상기 O-링에 의해 봉합되는 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 제1항에 있어서,각각의 지지수단은 상기 반도체 웨이퍼의 하면과 라인접촉하도록 상기 반도체 웨이퍼의 외주면을 따라 만곡된 내부 가장자리부를 갖는 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 제1항에 있어서,상기 회전메카니즘은 전기적으로 또는 공기압에 의해 작동되는 회전식 엑츄에이터인 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 제1항에 있어서,상기 승강메카니즘은 전기적으로 또는 공기압에 의해 작동되는 실린더메카니즘인 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 제1항에 있어서,벨로우를 더 포함하며, 상기 샤프트는 상기 벨로우와 함께 마련되고 상기 승강메카니즘에 연결된 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 삭제
- 제1항에 있어서,상기 O-링은 합성수지 봉합을 포함하는 것을 특징으로 하는 반도체 웨이퍼를 수용하기 위한 완충메카니즘.
- 단일 웨이퍼 처리 반응기에 있어서,상하로 구동 가능하며, 반도체 웨이퍼를 그 위에 적치하기 위한 서셉터;상기 반응기의 내부로 연장되고 복귀되는 이송아암이 관통하는 게이트밸브;상기 이송아암의 구동을 방해하지 않는 위치에서 상기 서셉터 내에 마련되며, 상기 서셉터의 구동을 개별적으로 상하 구동가능하게 하고, 상기 반도체 웨이퍼를 승강시키기 위한 승강핀; 및제1항의 상기 완충메카니즘을 포함하는 것을 특징으로 하는 단일 웨이퍼 처리 반응기.
- 반도체 제조장치에 있어서,제1항의 완충메카니즘을 포함하는 상기 반응기;상기 게이트밸브를 관통하여 상기 반응기에 연결된 로드록챔버; 및상기 게이트밸브를 관통하여 상기 반응기와 상기 로드록챔버 사이에서 반도체 웨이퍼를 이송하기 위한 이송아암을 포함하는 것을 특징으로 하는 반도체 제조장치.
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00222962 | 2001-07-24 | ||
JP2001222962A JP2003037146A (ja) | 2001-07-24 | 2001-07-24 | バッファ機構を有する半導体製造装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030010500A KR20030010500A (ko) | 2003-02-05 |
KR100873967B1 true KR100873967B1 (ko) | 2008-12-12 |
Family
ID=19056367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020020043319A KR100873967B1 (ko) | 2001-07-24 | 2002-07-23 | 완충메카니즘을 갖는 반도체 제조장치 및 반도체 웨이퍼의완충방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6860711B2 (ko) |
EP (1) | EP1280187A3 (ko) |
JP (1) | JP2003037146A (ko) |
KR (1) | KR100873967B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4417669B2 (ja) * | 2003-07-28 | 2010-02-17 | 日本エー・エス・エム株式会社 | 半導体処理装置および半導体ウエハーの導入方法 |
US7477956B2 (en) * | 2004-07-12 | 2009-01-13 | Applied Materials, Inc. | Methods and apparatus for enhancing electronic device manufacturing throughput |
US20070077134A1 (en) * | 2005-09-30 | 2007-04-05 | Dickinson Colin J | Vacuum handler systems and processes for flexible automation of semiconductor fabrication |
US7690881B2 (en) * | 2006-08-30 | 2010-04-06 | Asm Japan K.K. | Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus |
US8870512B2 (en) | 2007-10-27 | 2014-10-28 | Applied Materials, Inc. | Sealed substrate carriers and systems and methods for transporting substrates |
US20090162170A1 (en) * | 2007-12-19 | 2009-06-25 | Asm Japan K.K. | Tandem type semiconductor-processing apparatus |
JP5675416B2 (ja) * | 2011-02-17 | 2015-02-25 | 東京エレクトロン株式会社 | 被処理体の搬送方法及び被処理体処理装置 |
JP7030416B2 (ja) * | 2017-03-16 | 2022-03-07 | キヤノン株式会社 | 基板保持装置、リソグラフィ装置、物品の製造方法 |
US11569102B2 (en) | 2020-02-14 | 2023-01-31 | Applied Materials, Inc. | Oxidation inhibiting gas in a manufacturing system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11288995A (ja) * | 1998-04-04 | 1999-10-19 | Tokyo Electron Ltd | 搬送システム及び処理装置 |
JP2001148410A (ja) * | 1999-09-06 | 2001-05-29 | Tokyo Electron Ltd | 半導体処理用の搬送装置及び収容装置、並びに半導体処理システム |
Family Cites Families (11)
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US5643366A (en) * | 1994-01-31 | 1997-07-01 | Applied Materials, Inc. | Wafer handling within a vacuum chamber using vacuum |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US6102164A (en) * | 1996-02-28 | 2000-08-15 | Applied Materials, Inc. | Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers |
US5848670A (en) * | 1996-12-04 | 1998-12-15 | Applied Materials, Inc. | Lift pin guidance apparatus |
US6575737B1 (en) * | 1997-06-04 | 2003-06-10 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
JP3661138B2 (ja) * | 1998-04-04 | 2005-06-15 | 東京エレクトロン株式会社 | アライメント高速処理機構 |
JP2000040728A (ja) * | 1998-07-22 | 2000-02-08 | Nippon Asm Kk | ウェハ搬送機構 |
US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
KR100551806B1 (ko) * | 1999-09-06 | 2006-02-13 | 동경 엘렉트론 주식회사 | 반도체 처리용 반송 장치 및 수용 장치와, 반도체 처리시스템 |
US6630053B2 (en) * | 2000-08-22 | 2003-10-07 | Asm Japan K.K. | Semiconductor processing module and apparatus |
US6485248B1 (en) * | 2000-10-10 | 2002-11-26 | Applied Materials, Inc. | Multiple wafer lift apparatus and associated method |
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2001
- 2001-07-24 JP JP2001222962A patent/JP2003037146A/ja active Pending
-
2002
- 2002-07-01 US US10/187,670 patent/US6860711B2/en not_active Expired - Lifetime
- 2002-07-23 KR KR1020020043319A patent/KR100873967B1/ko active IP Right Grant
- 2002-07-23 EP EP02255157A patent/EP1280187A3/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11288995A (ja) * | 1998-04-04 | 1999-10-19 | Tokyo Electron Ltd | 搬送システム及び処理装置 |
JP2001148410A (ja) * | 1999-09-06 | 2001-05-29 | Tokyo Electron Ltd | 半導体処理用の搬送装置及び収容装置、並びに半導体処理システム |
Also Published As
Publication number | Publication date |
---|---|
EP1280187A2 (en) | 2003-01-29 |
US6860711B2 (en) | 2005-03-01 |
KR20030010500A (ko) | 2003-02-05 |
US20030021657A1 (en) | 2003-01-30 |
JP2003037146A (ja) | 2003-02-07 |
EP1280187A3 (en) | 2007-01-24 |
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