JPH0252858B2 - - Google Patents

Info

Publication number
JPH0252858B2
JPH0252858B2 JP58190255A JP19025583A JPH0252858B2 JP H0252858 B2 JPH0252858 B2 JP H0252858B2 JP 58190255 A JP58190255 A JP 58190255A JP 19025583 A JP19025583 A JP 19025583A JP H0252858 B2 JPH0252858 B2 JP H0252858B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
single crystal
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58190255A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6081862A (ja
Inventor
Tetsushi Sakai
Nobunori Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58190255A priority Critical patent/JPS6081862A/ja
Publication of JPS6081862A publication Critical patent/JPS6081862A/ja
Publication of JPH0252858B2 publication Critical patent/JPH0252858B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58190255A 1983-10-12 1983-10-12 半導体装置およびその製造方法 Granted JPS6081862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58190255A JPS6081862A (ja) 1983-10-12 1983-10-12 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58190255A JPS6081862A (ja) 1983-10-12 1983-10-12 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3241203A Division JPH05121416A (ja) 1991-09-20 1991-09-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS6081862A JPS6081862A (ja) 1985-05-09
JPH0252858B2 true JPH0252858B2 (en, 2012) 1990-11-14

Family

ID=16255089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58190255A Granted JPS6081862A (ja) 1983-10-12 1983-10-12 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6081862A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780711B2 (ja) * 1986-11-05 1998-07-30 ソニー株式会社 半導体装置の製造方法
JPS63184364A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の製造方法
JP2794571B2 (ja) * 1988-06-20 1998-09-10 ソニー株式会社 バイポーラトランジスタの製造方法
US5204276A (en) * 1988-12-06 1993-04-20 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH02153534A (ja) 1988-12-06 1990-06-13 Toshiba Corp 半導体装置の製造方法
JPH0744186B2 (ja) * 1989-03-13 1995-05-15 株式会社東芝 半導体装置の製造方法
GB2236901A (en) * 1989-09-20 1991-04-17 Philips Nv A method of manufacturing a semiconductor device
JP2015103551A (ja) * 2013-11-21 2015-06-04 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6081862A (ja) 1985-05-09

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