JPS6081862A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS6081862A JPS6081862A JP58190255A JP19025583A JPS6081862A JP S6081862 A JPS6081862 A JP S6081862A JP 58190255 A JP58190255 A JP 58190255A JP 19025583 A JP19025583 A JP 19025583A JP S6081862 A JPS6081862 A JP S6081862A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- region
- single crystal
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000013078 crystal Substances 0.000 claims abstract description 28
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052796 boron Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 71
- 229920005591 polysilicon Polymers 0.000 abstract description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- -1 6 ...5i8N Substances 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 241000519695 Ilex integra Species 0.000 description 1
- 241000087799 Koma Species 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58190255A JPS6081862A (ja) | 1983-10-12 | 1983-10-12 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58190255A JPS6081862A (ja) | 1983-10-12 | 1983-10-12 | 半導体装置およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3241203A Division JPH05121416A (ja) | 1991-09-20 | 1991-09-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6081862A true JPS6081862A (ja) | 1985-05-09 |
| JPH0252858B2 JPH0252858B2 (en, 2012) | 1990-11-14 |
Family
ID=16255089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58190255A Granted JPS6081862A (ja) | 1983-10-12 | 1983-10-12 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6081862A (en, 2012) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63116463A (ja) * | 1986-11-05 | 1988-05-20 | Sony Corp | 半導体装置の製造方法 |
| US4879252A (en) * | 1987-01-27 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device and a method of manufacturing the same |
| JPH023236A (ja) * | 1988-06-20 | 1990-01-08 | Sony Corp | バイポーラトランジスタの製造方法 |
| DE3940394A1 (de) | 1988-12-06 | 1990-06-07 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Verfahren zum herstellen einer halbleitervorrichtung |
| US4975381A (en) * | 1989-03-13 | 1990-12-04 | Kabushiki Kaisha Toshiba | Method of manufacturing super self-alignment technology bipolar transistor |
| US5023192A (en) * | 1989-09-20 | 1991-06-11 | U.S. Philips Corporation | Method of manufacturing a bipolar transistor |
| US5204276A (en) * | 1988-12-06 | 1993-04-20 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| JP2015103551A (ja) * | 2013-11-21 | 2015-06-04 | 旭化成エレクトロニクス株式会社 | 半導体装置及びその製造方法 |
-
1983
- 1983-10-12 JP JP58190255A patent/JPS6081862A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63116463A (ja) * | 1986-11-05 | 1988-05-20 | Sony Corp | 半導体装置の製造方法 |
| US4879252A (en) * | 1987-01-27 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device and a method of manufacturing the same |
| JPH023236A (ja) * | 1988-06-20 | 1990-01-08 | Sony Corp | バイポーラトランジスタの製造方法 |
| DE3940394A1 (de) | 1988-12-06 | 1990-06-07 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Verfahren zum herstellen einer halbleitervorrichtung |
| US5204276A (en) * | 1988-12-06 | 1993-04-20 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US4975381A (en) * | 1989-03-13 | 1990-12-04 | Kabushiki Kaisha Toshiba | Method of manufacturing super self-alignment technology bipolar transistor |
| US5023192A (en) * | 1989-09-20 | 1991-06-11 | U.S. Philips Corporation | Method of manufacturing a bipolar transistor |
| JP2015103551A (ja) * | 2013-11-21 | 2015-06-04 | 旭化成エレクトロニクス株式会社 | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0252858B2 (en, 2012) | 1990-11-14 |
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