JPH0371772B2 - - Google Patents

Info

Publication number
JPH0371772B2
JPH0371772B2 JP57064845A JP6484582A JPH0371772B2 JP H0371772 B2 JPH0371772 B2 JP H0371772B2 JP 57064845 A JP57064845 A JP 57064845A JP 6484582 A JP6484582 A JP 6484582A JP H0371772 B2 JPH0371772 B2 JP H0371772B2
Authority
JP
Japan
Prior art keywords
layer
insulating layer
region
base
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57064845A
Other languages
English (en)
Japanese (ja)
Other versions
JPS587862A (ja
Inventor
Deyuan Aizatsuku Randooru
Hangu Ningu Tatsuku
Maikeru Soromon Hooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS587862A publication Critical patent/JPS587862A/ja
Publication of JPH0371772B2 publication Critical patent/JPH0371772B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP57064845A 1981-06-30 1982-04-20 バイポ−ラ型トランジスタ−構造体及びその製造方法 Granted JPS587862A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28014281A 1981-06-30 1981-06-30
US280142 1981-06-30

Publications (2)

Publication Number Publication Date
JPS587862A JPS587862A (ja) 1983-01-17
JPH0371772B2 true JPH0371772B2 (en, 2012) 1991-11-14

Family

ID=23071863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064845A Granted JPS587862A (ja) 1981-06-30 1982-04-20 バイポ−ラ型トランジスタ−構造体及びその製造方法

Country Status (1)

Country Link
JP (1) JPS587862A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS58166766A (ja) * 1982-03-27 1983-10-01 Fujitsu Ltd 半導体装置の製造方法
JPS61131562A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
DE3825701A1 (de) * 1987-07-29 1989-02-09 Toshiba Kawasaki Kk Verfahren zur herstellung eines bipolaren transistors
US5096842A (en) * 1988-05-16 1992-03-17 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
JPH02153534A (ja) * 1988-12-06 1990-06-13 Toshiba Corp 半導体装置の製造方法
JP4245177B2 (ja) 2006-07-10 2009-03-25 日立プラズマディスプレイ株式会社 熱処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470776A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS587862A (ja) 1983-01-17

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