JPH0136709B2 - - Google Patents
Info
- Publication number
- JPH0136709B2 JPH0136709B2 JP57192773A JP19277382A JPH0136709B2 JP H0136709 B2 JPH0136709 B2 JP H0136709B2 JP 57192773 A JP57192773 A JP 57192773A JP 19277382 A JP19277382 A JP 19277382A JP H0136709 B2 JPH0136709 B2 JP H0136709B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- silicon substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57192773A JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57192773A JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5980968A JPS5980968A (ja) | 1984-05-10 |
| JPH0136709B2 true JPH0136709B2 (en, 2012) | 1989-08-02 |
Family
ID=16296781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57192773A Granted JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5980968A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323698U (en, 2012) * | 1989-07-18 | 1991-03-12 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611053B2 (ja) * | 1984-12-20 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
1982
- 1982-11-01 JP JP57192773A patent/JPS5980968A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323698U (en, 2012) * | 1989-07-18 | 1991-03-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5980968A (ja) | 1984-05-10 |
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