JPS5980968A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS5980968A
JPS5980968A JP57192773A JP19277382A JPS5980968A JP S5980968 A JPS5980968 A JP S5980968A JP 57192773 A JP57192773 A JP 57192773A JP 19277382 A JP19277382 A JP 19277382A JP S5980968 A JPS5980968 A JP S5980968A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57192773A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136709B2 (en, 2012
Inventor
Tadashi Hirao
正 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57192773A priority Critical patent/JPS5980968A/ja
Publication of JPS5980968A publication Critical patent/JPS5980968A/ja
Publication of JPH0136709B2 publication Critical patent/JPH0136709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57192773A 1982-11-01 1982-11-01 半導体集積回路装置の製造方法 Granted JPS5980968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57192773A JPS5980968A (ja) 1982-11-01 1982-11-01 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57192773A JPS5980968A (ja) 1982-11-01 1982-11-01 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5980968A true JPS5980968A (ja) 1984-05-10
JPH0136709B2 JPH0136709B2 (en, 2012) 1989-08-02

Family

ID=16296781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57192773A Granted JPS5980968A (ja) 1982-11-01 1982-11-01 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5980968A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147572A (ja) * 1984-12-20 1986-07-05 Mitsubishi Electric Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323698U (en, 2012) * 1989-07-18 1991-03-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147572A (ja) * 1984-12-20 1986-07-05 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0136709B2 (en, 2012) 1989-08-02

Similar Documents

Publication Publication Date Title
JP2503460B2 (ja) バイポ−ラトランジスタおよびその製造方法
JPS59119762A (ja) 埋込シヨツトキ−クランプ型トランジスタ
JPH038343A (ja) バイポーラトランジスタとその製造方法
JPS62237754A (ja) 半導体集積回路装置及びその製造方法
JPH0241170B2 (en, 2012)
US4691436A (en) Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
US4740482A (en) Method of manufacturing bipolar transistor
US4883772A (en) Process for making a self-aligned silicide shunt
US4631568A (en) Bipolar transistor construction
US4713355A (en) Bipolar transistor construction
JPS5980968A (ja) 半導体集積回路装置の製造方法
JPH0135505B2 (en, 2012)
JPH06204167A (ja) 半導体装置の製造方法
JPH0254662B2 (en, 2012)
JPH0136710B2 (en, 2012)
JPS60241261A (ja) 半導体装置およびその製造方法
JPH0318738B2 (en, 2012)
JPH0437581B2 (en, 2012)
JPH0130310B2 (en, 2012)
JPS61108169A (ja) 半導体装置
JPS63114261A (ja) トランジスタ用の自己整合型ベース分路
JPS63146466A (ja) ベース・エミッタコンタクト構成体及びその製造方法
JPS627704B2 (en, 2012)
JP2745946B2 (ja) 半導体集積回路の製造方法
JPH0418461B2 (en, 2012)