JPH0144021B2 - - Google Patents

Info

Publication number
JPH0144021B2
JPH0144021B2 JP59214617A JP21461784A JPH0144021B2 JP H0144021 B2 JPH0144021 B2 JP H0144021B2 JP 59214617 A JP59214617 A JP 59214617A JP 21461784 A JP21461784 A JP 21461784A JP H0144021 B2 JPH0144021 B2 JP H0144021B2
Authority
JP
Japan
Prior art keywords
well
type
substrate
conductivity type
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59214617A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61111576A (ja
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59214617A priority Critical patent/JPS61111576A/ja
Priority to KR1019850007087A priority patent/KR900004871B1/ko
Priority to DE8585401971T priority patent/DE3581045D1/de
Priority to EP85401971A priority patent/EP0178991B1/en
Publication of JPS61111576A publication Critical patent/JPS61111576A/ja
Priority to US07/348,132 priority patent/US4893164A/en
Publication of JPH0144021B2 publication Critical patent/JPH0144021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59214617A 1984-10-13 1984-10-13 半導体装置 Granted JPS61111576A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59214617A JPS61111576A (ja) 1984-10-13 1984-10-13 半導体装置
KR1019850007087A KR900004871B1 (ko) 1984-10-13 1985-09-26 높은 스위칭 속도와 래치업(latchup)효과를 받지 아니하는 상보형 반도체 장치
DE8585401971T DE3581045D1 (de) 1984-10-13 1985-10-10 "latch-up"-freie komplementaere halbleiteranordnung mit hoher schaltgeschwindigkeit.
EP85401971A EP0178991B1 (en) 1984-10-13 1985-10-10 A complementary semiconductor device having high switching speed and latchup-free capability
US07/348,132 US4893164A (en) 1984-10-13 1989-05-05 Complementary semiconductor device having high switching speed and latchup-free capability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59214617A JPS61111576A (ja) 1984-10-13 1984-10-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS61111576A JPS61111576A (ja) 1986-05-29
JPH0144021B2 true JPH0144021B2 (OSRAM) 1989-09-25

Family

ID=16658687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59214617A Granted JPS61111576A (ja) 1984-10-13 1984-10-13 半導体装置

Country Status (5)

Country Link
US (1) US4893164A (OSRAM)
EP (1) EP0178991B1 (OSRAM)
JP (1) JPS61111576A (OSRAM)
KR (1) KR900004871B1 (OSRAM)
DE (1) DE3581045D1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111576A (ja) * 1984-10-13 1986-05-29 Fujitsu Ltd 半導体装置
US5206535A (en) * 1988-03-24 1993-04-27 Seiko Epson Corporation Semiconductor device structure
DE68910445T2 (de) * 1988-09-01 1994-02-24 Fujitsu Ltd Integrierter Halbleiterschaltkreis.
US5223451A (en) * 1989-10-06 1993-06-29 Kabushiki Kaisha Toshiba Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip and method of making it
JPH03203348A (ja) * 1989-12-29 1991-09-05 Sony Corp 半導体装置及び半導体装置の製法
US5210437A (en) * 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
KR920008951A (ko) * 1990-10-05 1992-05-28 김광호 더블도우프된 채널스톱층을 가지는 반도체장치 및 그 제조방법
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
EP0637073A1 (en) * 1993-07-29 1995-02-01 STMicroelectronics S.r.l. Process for realizing low threshold P-channel MOS transistors for complementary devices (CMOS)
US5500548A (en) * 1995-01-05 1996-03-19 Texas Instruments Incorporated Non-epitaxial CMOS structures and processors
US5739058A (en) * 1995-12-14 1998-04-14 Micron Technology, Inc. Method to control threshold voltage by modifying implant dosage using variable aperture dopant implants
JPH1092950A (ja) 1996-09-10 1998-04-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6878595B2 (en) * 2003-01-27 2005-04-12 Full Circle Research, Inc. Technique for suppression of latchup in integrated circuits (ICS)
US7773442B2 (en) * 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
US9842629B2 (en) 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
KR101262485B1 (ko) * 2010-12-01 2013-05-08 현대자동차주식회사 아이들러 기구

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229756A (en) * 1979-02-09 1980-10-21 Tektronix, Inc. Ultra high speed complementary MOS device
JPS5643605A (en) * 1979-09-18 1981-04-22 Fujitsu Ltd Photoswitch
JPS57143854A (en) * 1981-02-27 1982-09-06 Toshiba Corp Complementary type metal oxide semiconductor device and its manufacture
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5821857A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp アナログ・デイジタル混載集積回路
JPS5871650A (ja) * 1981-10-26 1983-04-28 Hitachi Ltd 半導体集積回路装置
JPS5874083A (ja) * 1981-10-28 1983-05-04 Seiko Instr & Electronics Ltd Ｍｉｓ集積回路とその製造方法
JPS58170047A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS5969948A (ja) * 1982-10-15 1984-04-20 Fujitsu Ltd マスタ−スライス型半導体集積回路
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
JPS61111576A (ja) * 1984-10-13 1986-05-29 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0178991A3 (en) 1986-12-03
DE3581045D1 (de) 1991-02-07
KR860003660A (ko) 1986-05-28
US4893164A (en) 1990-01-09
EP0178991A2 (en) 1986-04-23
JPS61111576A (ja) 1986-05-29
KR900004871B1 (ko) 1990-07-08
EP0178991B1 (en) 1991-01-02

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